MTN7451Q8

CYStech Electronics Corp.
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN7451Q8
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4.5A
RDS(ON)@VGS=6V, ID=3.3A
RDS(ON)@VGS=5V, ID=2A
150V
4.5A
55 mΩ(typ)
59 mΩ(typ)
65 mΩ(typ)
Description
The MTN7451Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
Symbol
Outline
MTN7451Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTN7451Q8
CYStek Product Specification
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, ID=4.5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25 °C
Total Power Dissipation
TA=100 °C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
Limits
Tj, Tstg
150
±30
4.5
2.8
20 *1
4.5
100
1.6 *2
3.1
1.2
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
25
40
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Unit
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
150
2.0
-
9
55
59
65
4.0
±100
1
25
73
78
85
-
24
5.3
7.8
1284
128
56
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
MTN7451Q8
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=2.2A
VGS=±30V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
VGS =10V, ID=4.5A
VGS =6V, ID=3.3A
VGS =5V, ID=2A
nC
VDS=75V,ID=4.5A, VGS=10V
pF
VDS=25V, VGS=0V, f=1MHz
CYStek Product Specification
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 3/9
CYStech Electronics Corp.
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
14.4
tr
18
*1, 2
ns
td(OFF) *1, 2
35.2
tf *1, 2
23
Source-Drain Diode Ratings and Characteristics
IS *1
2.3
A
ISM *3
9.2
VSD *1
0.78
1.2
V
trr
39
ns
Qrr
68
nC
Test Conditions
VDS=75V, ID=1A, VGS=10V, RG=3Ω
IF=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTN7451Q8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN7451Q8
CYStek Product Specification
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V
ID, Drain Current (A)
16
VGS=5.5V
12
8
VGS=5V
4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=4.5V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=6V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.8
200
ID=4.5A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2.4
VGS=10V, ID=4.5A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 54mΩ
0
0
0
MTN7451Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=75V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=10V
0.1
Ta=25°C
Pulsed
0.01
0.001
8
VDS=30V
6
4
2
ID=4.5A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
5
100
RDSON
Limited
4.5
ID, Maximum Drain Current(A)
ID, Drain Current(A)
5
100μs
10
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=40°C/W
Single Pulse
1s
DC
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=40°C/W
0.5
0
0.01
0.1
MTN7451Q8
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
1500
20
Single Pulse Power Rating, Junction to Ambient
(See Note in page 2)
VDS=10V
Power (W)
ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
RθJC=40°C/W
1200
16
12
8
900
600
300
4
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.01
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40 ° C/W
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
MTN7451Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN7451Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7451Q8
CYStek Product Specification
Spec. No. : C841Q8
Issued Date : 2012.06.22
Revised Date : 2015.09.23
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
7451
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7451Q8
CYStek Product Specification