MTP2311M3

Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
60V P-Channel Enhancement Mode MOSFET
MTP2311M3
BVDSS
ID
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V, ID=-3A
-60V
-4A
72mΩ(typ.)
98mΩ(typ.)
Features
• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTP2311M3
SOT-89
G DD S
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTP2311M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2311M3
CYStek Product Specification
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TA=25°C
ID
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
IDM
Pd
Total Power Dissipation (TA=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
Limits
-60
±20
-4
-3.2
-20 *1, 3
2 *2
0.02
-55~+150
Unit
V
A
W
W/°C
°C
*2. Surface mounted on 1 in² copper pad of FR-4 board
*3. Pulse width≤300μs, duty cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-a
Value
62.5*
* Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTP2311M3
Min.
Typ.
Max.
Unit
Test Conditions
-60
-1
-
-0.04
-1.8
5.8
72
98
-2.5
±100
-1
-25
95
130
V
V/°C
V
S
nA
μA
μA
VGS=0, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VDS=-5V, ID=-3A
VGS=±20V, VDS=0
VDS=-48V, VGS=0
VDS=-48V, VGS=0 (Tj=70°C)
ID=-4A, VGS=-10V
ID=-3A, VGS=-4.5V
-
929
48
33
10
22
27
14
-
mΩ
pF
VDS=-30V, VGS=0, f=1MHz
ns
VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 3/9
-
14
3
3.4
-
nC
VDS=-30V, ID=-3.5A, VGS=-10V
-
-0.78
12
7
-1.2
-
V
ns
nC
VGS=0V, IS=-2A
IS=-2A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTP2311M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
4.5V
15
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
20
-VGS=4V
-VGS=3.5V
10
-VGS=3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=2.5V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-3.5V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4V
VGS=-3V
100
VGS=-4.5V
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.001
0.01
0.1
-ID, Drain Current(A)
1
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
180
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-4A
160
140
120
100
80
60
40
2
VGS=-10V, ID=-4A
1.6
1.2
VGS=-4.5V, ID=-3A
0.8
20
0.4
0
0
MTP2311M3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) ,Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.6
ID=-250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-10V
Pulsed
Ta=25°C
VDS=-30V
ID=-3.5A
8
6
4
2
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Drain Current vs JunctionTemperature
100
5
RDS(ON)
Limit
10
ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
100μs
1ms
1
10ms
0.1
TA=25°C, Tj=150°C
VGS=-10V, RθJA=62.5°C/W
Single Pulse
100ms
DC
0.01
4.5
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V, RθJA=62.5°C/W
0.5
0
0.01
MTP2311M3
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
50
20
VDS=10V
Power (W)
-ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
θJA=62.5°C/W
40
16
12
8
30
20
10
4
0
0.001
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTP2311M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP2311M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2311M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733M3
Issued Date : 2013.09.18
Revised Date :
Page No. : 9/9
SOT-89 Dimension
Marking:
A
2
1
3
Device Name
H
C
Date Code
2311
□□□□
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2311M3
CYStek Product Specification