Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 1/8 CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN303KN3 BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V,ID=400mA RDSON@VGS=1.8V,ID=350mA 20V 850mA 300mΩ(typ) 450mΩ(typ) 870mΩ(typ) Features • Simple drive requirement • Small package outline • Pb-free package Symbol Outline MTN303KN3 SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTN303KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN303KN3 CYStek Product Specification Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=4.5V Continuous Drain Current @ TA=70°C, VGS=4.5V Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Limits 20 ±8 850 680 3.5 0.35 ID IDM PD ESD susceptibility Operating Junction and Storage Temperature 0.003 2000 (Note 3) -55~+150 Tj, Tstg Unit V V mA mA A W W/°C V °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Human body model, 1.5kΩ in series with 100pF Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Limit Unit Rth,ja 360 °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf MTN303KN3 Min. Typ. Max. Unit 20 0.5 - 0.02 0.92 300 450 870 1.4 1.0 ±10 1 10 400 600 1200 - V V/°C V - 60 14 9 4 10 15 2 - Test Conditions S VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=16V, VGS=0 (Tj=70°C) VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA VGS=1.8V, ID=350mA VDS=5V, ID=600mA pF VDS=10V, VGS=0, f=1MHz ns VDS=10V, ID=600mA, VGS=10V RG=3.3Ω, RD=16.7Ω μA mΩ CYStek Product Specification CYStech Electronics Corp. Qg Qgs Qgd Source-Drain Diode *VSD Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 3/8 - 1.3 0.3 0.5 - nC VDS=16V, ID=600mA, VGS=4.5V - 0.81 1.2 V VGS=0V, IS=600mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTN303KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 3.5 ID, Drain Current (A) 3.0 VGS=3.5V VGS=3V 2.5 2.0 VGS=2.5V 1.5 VGS=2V 1.0 0.5 VGS=1V ID=250μA, VGS=0V BVDSS, Normalized Drain-Source Breakdown Voltage 5V 4.5V 4V 1.2 1 0.8 VGS=1.5V 0.6 0.0 0 1 2 3 VDS, Drain-Source Voltage(V) 4 -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1600 1 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1400 VGS=1.8V 1200 VGS=2.5V 1000 800 600 400 200 VGS=0V 0.8 Tj=25°C 0.6 Tj=150°C 0.4 0.2 VGS=4.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, Drain Current(A) 0.8 0.9 0 1 0.2 0.4 0.6 0.8 IDR, Reverse Drain Current (A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 1.6 900 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 800 700 600 500 ID=600mA ID=350mA 400 300 200 1.4 1.2 VGS=4.5V, ID=600mA 1 VGS=1.8V, ID=350mA 0.8 VGS=2.5V, ID=400mA 100 0.6 0 0 MTN303KN3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 5/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance---(pF) 100 VGS(th) , Normalized Threshold Voltage Capacitance vs Drain-to-Source Voltage Ciss C oss 10 Crss 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) Single Pulse Power Rating, Junction to Ambient (Note on page 2) Gate Charge Characteristics 10 20 VDS=16V Power (W) 15 VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TA=25°C RθJA=360°C/W 10 5 8 VDS=12V 6 VDS=10V 4 2 0 0 0.001 0.01 0.1 1 Pulse Width(s) 10 0 100 Maximum Safe Operating Area 0.5 1 1.5 2 Qg, Total Gate Charge(nC) 2.5 3 Maximum Drain Current vs JunctionTemperature 10 ID, Maximum Drain Current(A) 1 100μs ID, Drain Current (A) ID=850mA 1 1ms 10ms 0.1 TA=25°C, Tj=150°C, VGS=4.5V, RθJA=360°C/W Single Pulse 100m DC 0.01 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA=25°C, VGS=4.5V, RθJA=360°C/W 0.1 0 0.01 MTN303KN3 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 6/8 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 0.4 6 VDS=5V PD, Power Dissipation(W) ID, Drain Current (A) 5 4 3 2 0.3 0.2 0.1 1 0 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 6 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=360 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN303KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 7/8 Reel Dimension Carrier Tape Dimension MTN303KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 8/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN303KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814N3 Issued Date : 2012.05.15 Revised Date : 2015.05.11 Page No. : 9/8 SOT-23 Dimension Marking: A L B S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Date Code □□ TE 303 3 Style: Pin 1.Gate 2.Source 3.Drain C D H K J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN303KN3 CYStek Product Specification