CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN3410J3 Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 1/8 BVDSS ID RDS(ON) 100V 50A 30mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN3410J3 TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTN3410J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN3410J3 CYStek Product Specification Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM IAS EAS EAR Pd 100 ±30 50 35 150 30 45 22.5 60 0.37 -55~+175 Tj, Tstg Unit V A mJ W W/°C °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 75 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) *ID(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf MTN3410J3 Min. Typ. Max. Unit Test Conditions 100 1.5 50 2.5 38 22 - 4.0 ±100 1 25 30 - V V S nA μA μA mΩ A VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=30A VGS=±30 VDS =80V, VGS =0V VDS =70V, VGS =0V, Tj=125°C VGS =10V, ID=30A VDS =10V, VGS =10V - 45 15 25 25 200 100 120 - nC ID=30A, VDS=80V, VGS=10V ns VDS=50V, ID=1A, VGS=10V, RG=6Ω CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 9600 275 197 2 - 120 380 50 150 1.3 - Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 3/8 pF VGS=0V, VDS=25V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=25A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTN3410J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 4/8 Characteristic Curves MTN3410J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 5/8 Characteristic Curves(Cont.) MTN3410J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTN3410J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3410J3 CYStek Product Specification Spec. No. : C433J3 Issued Date : 2008.12.24 Revised Date : 2015.01.22 Page No. : 8/8 CYStech Electronics Corp. TO-252AA Dimension Marking: 4 Device Name 3410 Date Code □□□□ 1 3-Lead TO-252AA Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3410J3 CYStek Product Specification