CYSTEKEC MTN35N03J3

Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 1/7
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN35N03J3
BVDSS
ID
RDSON
25V
36A
13.5mΩ
Features
• Dynamic dv/dt Rating
• Single Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
TO-252
MTN35N03J3
G:Gate
D:Drain
S:Source
G D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
Symbol
VDS
VGS
ID
ID
IDM
Pd
EAS
IAS
Tj, Tstg
Limits
25
±20
36
25
150 *1
50
0.4
150 *2
25
-55~+150
Unit
V
V
A
A
A
W
W/°C
mJ
A
°C
*2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A
MTN35N03J3
CYStek Product Specification
Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
25
∆BVDSS/∆Tj
VGS(th)
1.0
GFS
IGSS
IDSS
IDSS
*RDS(ON)
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
-
Typ.
Max.
Unit
Test Conditions
0.037
26
7
13
3.0
±100
1
25
13.5
20
V
V/°C
V
S
nA
μA
μA
mΩ
mΩ
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS =10V, ID=18A
VGS=±20
VDS =25V, VGS =0
VDS =20V, VGS =0, Tj=150°C
VGS =10V, ID=30A
VGS =4.5V, ID=30A
18.4
3.57
2.9
11.7
3.87
32.1
5.4
1176
268
142
-
-
1.5
50
nC
ID=18A, VDS=20V, VGS=5V
ns
VDS=15V, ID=18A, VGS=10V,
RG=3.3Ω, RD=0.83Ω
pF
VGS=0V, VDS=25V, f=1MHz
V
A
IS=20A, VGS=0V
VD=VG=0, VS=1.5V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN35N03J3
MTN35N03J3
Package
TO-252
(RoHS compliant)
Shipping
Marking
2500 pcs / Tape & Reel
35N03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 3/7
Characteristic Curves
MTN35N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 4/7
Characteristic Curves(Cont.)
MTN35N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN35N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN35N03J3
CYStek Product Specification
Spec. No. : C389J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 7/7
CYStech Electronics Corp.
TO-252 Dimension
C
A
D
B
Device Name
Date code
G
F
L
Marking:
35N03
□□□□
3
H
E
K
2
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.20
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0449
0.0346
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
1.14
0.88
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ;pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN35N03J3
CYStek Product Specification