Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 1/9 CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET MTN20NF06J3 BVDSS 60V ID 50A RDSON 22mΩ Features • VDS=60V, ID=50A, RDS(ON)=22mΩ • Low Gate Charge • Simple Drive Requirement • RoHS compliant package Symbol • Repetitive Avalanche Rated • Fast Switching Characteristic Outline MTN20NF06J3 TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC=25℃) Derates above 25°C Operating Junction and Storage Temperature Symbol Limits Unit VDS VGS 60 ±20 50 35 200 50 447 6 7 60 0.4 -55~+175 V V ID (Note 1) (Note 1) (Note 2) (Note 1) (Note 3) IDM IAR EAS EAR dv/dt PD Tj, Tstg A mJ V/ns W W/°C °C Note : *1.Repetitive Rating : Pulse width limited by maximum junction temperature *2. L=230μH, IAS=50A,VDD=25V, starting TJ=+25℃ *3. ISD≤50A, dI/dt<100A/μs, VDD≤BVDSS, TJ≤Tj(max). MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 2/9 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Maximum Lead Temperature for Soldering purpose Symbol Rth,j-c Rth,j-a TJ (Note) Value 2.5 100 275 Unit °C/W °C/W °C Note : 1.6mm from case, for 10 seconds Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 60 2 - 0.06 2.8 28 19 19 4 ±100 1 10 22 22 V V/°C V S nA VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=25A VGS=±20 VDS =60V, VGS =0 VDS =48V, VGS =0, TC=150°C VGS =10V, ID=30A VGS =10V, ID=12A - 31 8 13 15 105 60 65 1180 440 65 41 40 220 130 140 1540 580 90 - 52 75 50 200 1.5 - Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr μA mΩ nC ID=50A, VDS=48V, VGS=10V ns VDD=30V, ID=25A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IS=50A, VGS=0 IS=50A, dIF/dt=100A/μs, VGS=0 *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN20NF06J3 MTN20NF06J3 Package TO-252 (RoHS compliant) Shipping Marking 2500 pcs / Tape & Reel 20NF06 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 3/9 Characteristic Curves MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 4/9 Characteristic Curves(Cont.) MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 5/9 Test Circuit and Waveforms MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 6/9 Test Circuit and Waveforms(Cont.) MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN20NF06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 9/9 TO-252 Dimension C A D B Device Name Date code G F L Marking: 20NF06 □□ 3 H E K 2 I Style: Pin 1.Gate 2.Drain 3.Source 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; tin plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN20NF06J3 CYStek Product Specification