MTB17A03Q8

CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTB17A03Q8
BVDSS
30V
ID
10A
RDSON(TYP)
VGS=10V, ID=10A
8.6mΩ
VGS=4.5V, ID=6A
12.6mΩ
Description
The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
• RDS(ON)=15mΩ(max.)@VGS=10V, ID=10A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & halogen-free package
Equivalent Circuit
MTB17A03Q8
Outline
SOP-8
G：Gate S：Source D：Drain
MTB17A03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 2/ 9
Ordering Information
Device
MTB17A03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS=10V, TA=25 °C
Continuous Drain Current, VGS=10V, TA=70 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25°C
Power Dissipation
TA=70°C
Operating Junction and Storage Temperature Range
(Note 2)
(Note 3)
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
30
±20
10
8.4
40
10
5
2.5
2.4
1.7
-55~+175
PD
Tj ; Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
25
62.5 (Note 3)
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
MTB17A03Q8
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
30
1
10
-
1.6
18
8.6
12.6
2.5
±100
1
25
15
25
V
V
S
nA
-
-
-
19
10.3
3.7
4.8
12
10
57
21
1119
124
107
2
-
-
0.75
50
2
2.3
9.2
1.2
-
Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
*RDS(ON) *1
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
μA
A
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20V
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=10A
VGS =4.5V, ID=6A
nC
VDS=15V, ID=10A, VGS=10V
ns
VDS=15V, ID=1A,VGS=10V, RG=6Ω
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF= IS, VGS=0V
IF= IS, dI/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB17A03Q8
CYStek Product Specification
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V,9V,8V,7V,6V,5V,4V
36
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
40
32
28
24
20
16
VGS=3V
12
1.2
1
0.8
0.6
8
4
VGS=2V
0.4
0
0
1
ID=250μA,
VGS=0V
2
3
4
VDS , Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=2.5V
10
VGS=3V
1
0.001
VGS=4.5V
VGS=10V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
2
4
6
8 10 12 14 16
IDR , Reverse Drain Current(A)
18
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
2.4
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
90
80
70
60
50
ID=10A
ID=6A
40
30
20
10
2
VGS=10V, ID=10A
1.6
1.2
0.8
VGS=4.5V, ID=6A
0.4
0
0
0
MTB17A03Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Gate Charge Characteristics
10
1
0.1
VDS=10V
Pulsed
Ta=25°C
VDS=10V
8
VDS=10V
6
VDS=15V
4
2
ID=10A
0.01
0.001
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
ID, Maximum Drain Current(A)
100μs
RDS(ON)
Limit
1ms
10ms
100ms
1
1s
0.1
8
12
16
Qg, Total Gate Charge(nC)
20
12
100
10
4
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
T A=25°C, T j=175°C,
VGS=10V,R θJA=62.5°C/W,
DC
10
8
6
4
TA=25°C, VGS=10V, RθJA=62.5°C/W
2
single pulse
0
0.01
0.01
MTB17A03Q8
0.1
1
10
100
VDS , Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
500
40
VDS=10V
TJ(MAX) =175°C
TA=25°C
θJA=62.5°C/W
400
30
Power (W)
ID, Drain Current (A)
35
25
20
15
10
300
200
100
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB17A03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB17A03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB17A03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2014.01.20
Page No. : 9/ 9
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
E
D
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB17A03Q8
CYStek Product Specification