MTEF1P15Q8

CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTEF1P15Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-1.6A
RDSON@VGS=-6V, ID=-1A
-150V
-1.6A
650mΩ(typ)
700mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and Halogen-free package
Equivalent Circuit
Outline
MTEF1P15Q8
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTEF1P15Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEF1P15Q8
CYStek Product Specification
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 1)
TA=25 °C
Power Dissipation
(Note 2)
TA=70 °C
Operating Junction and Storage Temperature Range
Symbol
Limits
Unit
BVDSS
VGS
ID
ID
IDM
-150
±20
-1.6
-1.3
-6.4
3.1
2
-55~+150
V
V
A
A
A
W
W
°C
PD
Tj ; Tstg
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
Thermal Resistance Ratings
Thermal Resistance
Junction-to-Case
Junction-to-Ambient (Note)
Symbol
RθJC
Maximum
30
Unit
RθJA
40
°C / W
2
Note : W when mounted on a 1 in pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON)
GFS
(Note 1)
(Note 1)
-150
-2
-
-2.8
650
700
2.6
-3.5
±100
-1
-10
800
910
-
-
478
28
12
8
6
20
4
6
2
1.4
-
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-120V, VGS=0V
VDS=-120V, VGS=0, Tj=125°C
ID=-1.6A, VGS=-10V
ID=-1A, VGS=-6V
VDS=-10V, ID=-1.4A
pF
VDS=-30V, VGS=0, f=1MHz
ns
VDS=-75V, ID=-1A, VGS=-10V,
RG=1Ω
nC
VDS=-75V, ID=-1A, VGS=-10V
V
nA
μA
mΩ
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
MTEF1P15Q8
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Min.
Source-Drain Diode
IS
ISM(Note 3)
VSD(Note 1)
trr
Qrr
-
Typ.
Max.
-0.78
60
120
-1.6
-6.4
-1.2
-
Unit
Test Conditions
A
V
ns
nC
IS=-1.6A, VGS=0V
IF=-1A, dIF/dt=100A/μs
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
MTEF1P15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
Typical Output Characteristics
6.4
6.4
-10V,
-9V,
-8V,
-7V,
-6V
4.8
4.0
Tj=25°C
-5V
3.2
2.4
1.6
0.8
-10V,
-9V,
-8V,
-7V,
-6V
5.6
-ID, Drain Current (A)
-ID, Drain Current (A)
5.6
4.8
4.0
2.4
-5V
1.6
VGS=-4V
0.0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
10
0
2
Static Drain-Source On-State resistance vs Drain Current
4
6
8
-VDS, Drain-Source Voltage(V)
10
Source Drain Current vs Source-Drain Voltage
10000
1.2
VGS=0V
VGS=-4.5V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
-5.2V
3.2
0.8
VGS=-4V
0.0
VGS=-6V
1000
VGS=-10V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
100
0.1
1
-ID, Drain Current(A)
0
10
1000
8
12
16
-IS, Source Drain Current(A)
20
R DS(on) , Normalized Static DrainSource On-State Resistance
2.2
950
ID=-1.4A
900
850
800
750
700
650
2
VGS=-10V, ID=-1.4A
1.8
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @Tj=25°C : 645mΩ typ.
0.4
0.2
600
0
MTEF1P15Q8
4
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
Tj=0°C
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
-VGS(th) , Normalized Threshold
Voltage
Capacitance---(pF)
1000
Ciss
100
C oss
Crss
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
Gate Charge Characteristics
VDS=-100V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
10
10
1
0.1
VDS=-10V
Pulsed
TA=25°C
0.01
8
VDS=-75V
VDS=-50V
6
4
2
ID=-1A
0.001
0.001
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
Qg, Total Gate Charge(nC)
8
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
2
10
-ID, Maximum Drain Current(A)
100μs
-I D, Drain Current(A)
0
Tj, Junction Temperature(°C)
1ms
1
10ms
100ms
0.1
1s
TA=25°C, Tj=150°C, VGS=-10V
θJA=40°C/W, Single Pulse
DC
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
TA=25°C, VGS=-10V
0.2
0
0.01
0.1
MTEF1P15Q8
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
6.4
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
VDS=-10V
5.6
4.8
-ID, Drain Current(A)
250
Power (W)
Typical Transfer Characteristics
200
150
100
4.0
3.2
2.4
1.6
50
0.8
0
0.001
0.0
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
6
-VGS, Gate-Source Voltage(V)
8
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
10
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
Normalized Brekdown Voltage vs Ambient Temperature
-BVDSS , Normalized Drain-Source
Breakdown Voltage
1.4
1.2
1
0.8
ID=-250μA,
VGS =0V
0.6
-60
MTEF1P15Q8
-20
20
60
100
Tj, Junction Temperature(°C)
140
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTEF1P15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTEF1P15Q8
CYStek Product Specification
Spec. No. : C896Q8
Issued Date : 2013.07.05
Revised Date : 2014.12.31
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Date Code
EF1
P15
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1496
0.1575
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.70
5.10
3.80
4.00
5.80
6.20
1.27 *
0.33
0.51
3.74
3.88
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0531
0.0689
0.1889
0.2007
0.0019
0.0098
0.0157
0.0500
0.0067
0.0098
0.0531
0.0610
Millimeters
Min.
Max.
1.35
1.75
4.80
5.10
0.05
0.25
0.40
1.27
0.17
0.25
1.35
1.55
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTEF1P15Q8
CYStek Product Specification