MTN2300N3

Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 1/8
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2300N3
BVDSS
20V
ID
RDSON@VGS=4.5V, ID=6A
6.3A
23mΩ(typ.)
RDSON@VGS=2.5V, ID=5.2A
30mΩ(typ.)
RDSON@VGS=1.5V, ID=500mA
64mΩ(typ.)
Features
• Low on-resistance
• Capable of 2.5V gate drive
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
Outline
MTN2300N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN2300N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃ (Note 3)
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
20
±8
6.3
5
20
1.38
0.01
90
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board, t≤10sec.
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Min.
Typ.
Max.
Unit
20
0.5
-
0.65
23
30
64
8
1.0
±100
1
25
28
38
96
-
V
V
nA
μA
μA
-
742
66
78
8
12
23
14
9
1.5
2.6
-
-
0.78
1.3
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0, Tj=70°C
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VGS=1.5V, ID=500mA
VDS=5V, ID=3A
pF
VDS=15V, VGS=0, f=1MHz
ns
VDD=10V, ID=1A, VGS=4.5V, RG=6Ω
nC
VDS=10V, ID=6A, VGS=4.5V
V
VGS=0V, IS=1.25A
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN2300N3
CYStek Product Specification
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V,8V,7V,6V, 5V, 4V, 3V
ID, Drain Current(A)
16
VGS=2V
12
8
4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=1.5V
0.4
0
0
1
2
3
-75
4
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=1.5V
1.8V
2.5V
3V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
-25
VDS, Drain-Source Voltage(V)
1000
4.5V
100
VGS=10V
0.01
0.1
1
ID, Drain Current(A)
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0
10
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
1.8
180
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
160
140
120
100
80
ID=6A
ID=5.2A
60
40
20
VGS=4.5V, ID=6A
1.6
1.4
1.2
1
VGS=2.5V, ID=5.2A
0.8
0.6
0.4
0
0
MTN2300N3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
Crss
100
C oss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
Gate Charge Characteristics
100
10
Pulsed
Ta=25°C
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
20 40
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=5V
10
1
0.1
0.01
0.001
VDS=10V
ID=6A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
8
ID, Maximum Drain Current(A)
ID, Drain Current(A)
0
100μs
10
1ms
10ms
1
100ms
0.1
DC
TA=25°C, Tj=150°C,VGS=4.5V
RθJA=90°C/W, Single Pulse
0.01
0.01
6
5
4
3
2
1
TA=25°C, VGS=4.5V
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTN2300N3
7
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 5/8
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 1)
Power Derating Curve
1.6
50
Mounted on FR-4 board
with 1 in² pad area
1.2
TJ(MAX) =150°C
TA=25°C
RθJA=90°C/W
40
1
Power (W)
PD, Power Dissipation(W)
1.4
0.8
0.6
0.4
30
20
10
0.2
0
0
50
100
150
200
0
0.001
0.01
TA, Ambient Temperature(℃)
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=90 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2300N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date : 2014.04.22
Page No. : 8/8
SOT-23 Dimension
Marking:
TE
2300
Style: Pin 1.Gate 2.Source 3.Drain
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032
0.0079
0.0118
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
0.0118
0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2300N3
CYStek Product Specification