MTB12P06J3 BVDSS

Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 1/10
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
MTB12P06J3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-17A
RDS(ON)@VGS=-4.5V, ID=-14A
-60V
-50A
11.2mΩ(typ)
16 mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & halogen-free package
Equivalent Circuit
Outline
MTB12P06J3
TO-252(DPAK)
G
G：Gate D：Drain
S：Source
D S
Ordering Information
Device
MTB12P06J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB12P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=175°C, TC=25°C, VGS=10V
(Note 1)
Symbol
Limits
Unit
VDS
VGS
-60
±20
V
ID
Continuous Drain Current @ TJ=175°C,TC=125°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-50A, RG=25Ω
TC=25°C
TC=100°C
Total Power Dissipation
TA=25°C
TA=70°C
ESD susceptibility
Operating Junction and Storage Temperature Range
(Note 2)
IDSM
(Note 2)
IDM
IAS
EAS
(Note 3)
(Note 3)
(Note 2)
(Note 1)
PD
(Note 1)
(Note 2)
PDSM
(Note 2)
(Note 4)
VESD
Tj, Tstg
-50
-28.9
-10.8
-8.6
-80
-50
125
113
45
2.5
1.6
3000
-55~+150
A
mJ
W
V
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t≤10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state (Note 4)
Symbol
RθJC
RθJA
Typical
0.82
15
40
Maximum
1.1
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. Human body model, 1.5kΩ in series with 100pF
MTB12P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 3/10
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
*1
RDS(ON)
*1
Min.
Typ.
Max.
-60
-0.8
-50
-
11.2
16
34
-2.5
±100
-1
-25
-50
14.5
25
28
21
-
GFS *1
Dynamic
Qg *1, 2
126
185
Qgs *1, 2
18
Qgd *1, 2
22.6
td(ON) *1, 2
20
30
tr
30
45
*1, 2
td(OFF) *1, 2
159
239
tf *1, 2
50
75
Ciss
6959
Coss
393
Crss
328
Rg
4.4
Source-Drain Diode Ratings and Characteristics
IS *1
-50
ISM *1
-80
VSD *1
-0.94
-1.5
trr
15.5
40
Qrr
8.1
-
Unit
Test Conditions
S
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS =-60V, VGS =0V
VDS =-60V, VGS =0V, TJ=125°C
VDS =-60V, VGS =0V, TJ=150°C
VDS =-5V, VGS =-10V
VGS =-10V, ID=-17A
VGS =-10V, ID=-50A, TJ=125°C
VGS =-10V, ID=-50A, TJ=150°C
VGS =-4.5V, ID=-14A
VDS =-15V, ID=-17A
nC
ID=-50A, VDS=-30V, VGS=-10V
ns
VDS=-30V, ID=-50A, VGS=-10V,
RG=6Ω
pF
VGS=0V, VDS=-25V, f=1MHz
Ω
VDS=0V, f=1MHz
V
nA
μA
A
mΩ
A
V
ns
nC
IS=-50A, VGS=0V
IF=-50A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB12P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 4/10
Recommended soldering footprint
MTB12P06J3
CYStek Product Specification
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 5/10
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
80
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4.5V,4V,3.5V,3V
-I D, Drain Current(A)
70
60
-VGS=2.5V
50
40
30
20
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
10
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
In descending order
VGS= -3V
-4.5V
-10V
90
80
70
-VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
60
50
40
30
20
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.2
0
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
2.4
90
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-17A
80
70
60
50
40
30
20
10
VGS=-10V, ID=-17A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 11.2mΩ typ
0.4
0
0
MTB12P06J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 6/10
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
f=1MHz
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
100
0
-75 -50 -25
30
10
20
-VDS, Drain-Source Voltage(V)
-VGS, Gate-Source Voltage(V)
-I D, Drain Current (A)
10
1ms
10ms
100ms
10
1s
DC
1
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=1.1°C/W,
single pulse
8
6
4
VDS=-30V
ID=-50A
2
0
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
20
40
60
80
100
Qg, Total Gate Charge(nC)
120
140
Forward Transfer Admittance vs Drain Current
Maximum Drain Current vs Case Temperature
100
GFS , Forward Transfer Admittance(S)
60
-I D, Maximum Drain Current(A)
75 100 125 150 175 200
Gate Charge Characteristics
100μ s
RDS(ON)
Limited
25 50
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
0
50
40
30
20
VGS=-10V, Tj(max)=175°C,
RθJC=1.1°C/W, single pulse
10
0
25
MTB12P06J3
50
75
100 125
150
TC , Case Temperature(°C)
175
200
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 7/10
Typical Characteristics (Cont.)
Power Derating Curve
Typical Transfer Characteristics
140
80
VDS=-10V
120
PD, Power Dissipation(W)
70
-ID, Drain Current(A)
60
50
40
30
20
100
80
60
40
20
10
0
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0
25
50
75
100
125
TC, Case Temperature(℃)
150
175
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=1.1°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB12P06J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
MTB12P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB12P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C584J3
Issued Date : 2014.07.20
Revised Date : 2015.07.22
Page No. : 10/10
TO-252 Dimension
Marking:
4
Device
Name
B12
P06
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB12P06J3
CYStek Product Specification