MTB30P06KQ8 BVDSS

CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB30P06KQ8
BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
RDSON@VGS=-4V, ID=-3A
-60V
-7A
23.5mΩ(typ)
37.5mΩ(typ)
44.3mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free and Halogen-free package
Equivalent Circuit
Outline
MTB30P06KQ8
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTB30P06KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB30P06KQ8
CYStek Product Specification
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=5mH, IAS=-7A, VDD=-15V
TA=25 °C
Power Dissipation
(Note 2)
TA=70 °C
Operating Junction and Storage Temperature Range
BVDSS
VGS
-60
±20
-7
-5.6
-28
-7
122.5
3.1
2
-55~+150
ID
IDM
IAS
EAS
PD
Tj ; Tstg
Unit
V
A
mJ
W
°C
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
Thermal Resistance Ratings
Thermal Resistance
Junction-to-Case
Junction-to-Ambient (Note)
Symbol
RθJC
RθJA
Maximum
5
40
Unit
°C / W
Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Static
BVDSS
-60
V
VGS(th)
-1.2
-2.5
IGSS
±10
-1
μA
IDSS
-25
23.5
30.5
37.5
48.8
RDS(ON) (Note 1)
mΩ
44.3
58.0
GFS
14
S
(Note 1)
Dynamic
Ciss
1453
pF
Coss
218
Crss
120
td(ON) (Note 1&2)
14
tr
18.8
(Note 1&2)
ns
td(OFF) (Note 1&2)
68.2
tf
66.2
(Note 1&2)
MTB30P06KQ8
Test Conditions
VGS=0V, ID=-250μA
VDS=-10V, ID=-1mA
VGS=±16V, VDS=0V
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V, Tj=85°C
ID=-6A, VGS=-10V
ID=-4A, VGS=-4.5V
ID=-3A, VGS=-4V
VDS=-5V, ID=-6A
VDS=-20V, VGS=0V, f=1MHz
VDS=-30V, ID=-1A, VGS=-10V,
RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Qg (Note 1&2)
Qgs (Note 1&2)
Qgd (Note 1&2)
Source-Drain Diode
IS
ISM(Note 3)
VSD(Note 1)
trr
Qrr
Min.
-
Typ.
28.6
5.8
8.4
Max.
-
-
-0.77
14.5
8
-4
-16
-1.2
-
Unit
nC
Test Conditions
VDS=-48V, ID=-7A, VGS=-10V
A
V
ns
nC
IS=-4A, VGS=0V
IF=-4A, dIF/dt=100A/μs
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Recommended Soldering Footprint
MTB30P06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 4/9
Typical Characteristics
Normalized Brekdown Voltage vs Ambient
Temperature
Typical Output Characteristics
1.4
28
-I D, Drain Current (A)
24
20
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-10V, -9V,-8V,-7V,-6V,-5V
-4.5V
16
12
-4V
8
-3.5V
Tj=25°C
4
VGS=-3V
2
4
6
8
-VDS, Drain-Source Voltage(V)
1.0
0.8
ID=-250μA,
VGS=0V
0.6
0
0
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1000
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=-3.5V
100
VGS=-4.5V
-VSD, Source-Drain Voltage(V)
VGS=0V
VGS=-4V
1.0
0.8
0.6
Tj=150°C
0.4
VGS=-10V
0.2
10
0.1
1
-ID, Drain Current(A)
0
10
4
8
12
16
-IS, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
2.2
R DS(on) , Normalized Static DrainSource On-State Resistance
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
Tj=25°C
450
ID=-6A
400
350
300
250
200
150
100
2.0
1.6
1.4
1.2
1.0
0.8
0.6
50
0.4
0
0.2
0
MTB30P06KQ8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
VGS=-10V, ID=-6A
1.8
RDS(ON) @Tj=25°C : 23.6mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 5/9
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
-VGS(th) , Normalized Threshold
Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=-1mA
1.0
0.8
0.6
ID=-250μA
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
10
1
VDS=-5V
Pulsed
TA=25°C
0.1
8
VDS=-15V
6
4
VDS=-48V
2
ID=-7A
0.01
0.001
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
9.0
-I D, Maximum Drain Current(A)
100
100μs
-I D, Drain Current(A)
VDS=-30V
10
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
DC
8.0
7.0
6.0
5.0
4.0
3.0
2.0
TA=25°C, VGS=-10V, RθJA=40°C/W
1.0
0.0
0.01
0.1
MTB30P06KQ8
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
28
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
VDS=-10V
24
-I D, Drain Current(A)
250
Power (W)
Typical Transfer Characteristics
200
150
100
50
20
16
12
8
4
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
-VGS, Gate-Source Voltage(V)
6
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
10
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
MTB30P06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB30P06KQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB30P06KQ8
CYStek Product Specification
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Date Code
B30P
06K
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1496
0.1575
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.70
5.10
3.80
4.00
5.80
6.20
1.27 *
0.33
0.51
3.74
3.88
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0531
0.0689
0.1889
0.2007
0.0019
0.0098
0.0157
0.0500
0.0067
0.0098
0.0531
0.0610
Millimeters
Min.
Max.
1.35
1.75
4.80
5.10
0.05
0.25
0.40
1.27
0.17
0.25
1.35
1.55
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB30P06KQ8
CYStek Product Specification