MTN14N60FP

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN14N60FP
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 1/9
BVDSS : 600V
RDS(ON) : 0.55Ω(max.)
ID : 14A
Description
The MTN14N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Symbol
Outline
MTN14N60FP
TO-220FP
G：Gate
D：Drain
S：Source
MTN14N60FP
G D S
CYStek Product Specification
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
600
±30
14*
8.4*
56*
53
14
16
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
Tj, Tstg
60
0.35
-55~+150
W
W/°C
°C
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=14A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN14N60FP
Symbol
Rth,j-c
Rth,j-a
Value
2.58
100
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.7
5
-
4.0
±100
1
10
0.55
V
V/°C
V
S
nA
μA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=7A
VGS=±30
VDS =600V, VGS =0
VDS =480V, VGS =0, Tj=125°C
VGS =10V, ID=8.4A
40
10
15
16
30
48
34
2222
180
17
-
nC
ID=14A, VDD=250V, VGS=10V
ns
VDD=250V, ID=14A, VGS=10V,
RG=9.1Ω
pF
VGS=0V, VDS=25V, f=1MHz
392
3529
14
56
1.5
-
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
A
V
ns
nC
IS=14A, VGS=0V
VGS=0, IF=14A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN14N60FP
MTN14N60FP
Package
TO-220FP
(RoHS compliant)
Shipping
Marking
50 pcs/tube, 20 tubes/box, 4 boxes / carton
14N60
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
20
18
10V
8V
18
6V
5.5V
12
10
8
5V
6
4
2
VDS=10V
16
14
Drain Current -ID(A)
Drain Current - ID(A)
16
14
12
10
8
6
4
2
VGS=4.5V
0
0
0
2
4
6
8
Drain-Source Voltage -VDS(V)
10
2
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State
Resistance-RDS(ON)(mΩ)
Static Drain-Source On-State
Resistance-RDS(on)(mΩ)
1000
1600
1100
600
VGS=10V
ID=20A
100
100
0.01
100
0.1
1
10
Drain Current-ID(A)
0
100
Body Diode Forward Voltage Drop vs Source Current
and Temperature
VGS=0V
10
1
0.1
0.01
150°C
25°C
0.001
0
MTN14N60FP
0.2
0.4
0.6
0.8
Source-Drain Voltage-VSD(V)
1
2
4
6
8
Gate-Source Voltage-VGS(V)
10
Breakdown Voltaeg vs Junction Temperature
1.2
Normalized Drain-Source Breakdown
Voltage
Reverse Drain Current -IDR(A)
10
4
6
8
Gate-Source Voltage-VGS(V)
1.1
1
VGS=0V,
ID=250uA
0.9
0.8
-100 -75
-50
-25 0
25 50 75
Junction Temperature-Tj(°C)
100 125 150
CYStek Product Specification
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Gate Charge Characteristics
3
12
2.5
10
VDS=400V
Gate-Source Voltage-VGS(V)
Normalized Drain-Source On-resistance
Drain-Source On-resistance vs Junction Temperature
2
1.5
1
VGS=10V,
ID=8.4A
0.5
0
-100 -75
VDS=250V
8
VDS=100V
6
4
2
ID=14A
0
-50
-25
0
25 50 75
Junction Temperature-Tj(°C)
100 125 150
0
20
30
Total Gate Charge-Qg(nC)
40
50
Maximum Safe Operating Area
Maximum Drain Current vs Case Temperature
100
16
14
100μs
12
Drain Current---ID(A)
Maximum Drain Current---ID(A)
10
10
8
6
4
10μs
1ms
10
10ms
100ms
DC
1
Operation in this area
is limited by RDS(ON)
0.1
TC=25°C, TJ=150°C,
Single Pulse
2
0
0.01
25
MTN14N60FP
50
75
100
Case Temperature-Tc(°C)
125
150
1
10
100
Drain-Source Voltage-VDS(V)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 6/9
Test Circuit and Waveforms
MTN14N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 7/9
Test Circuit and Waveforms(Cont.)
MTN14N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 8/9
TO-220FP (C Forming) Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.169
0.185
0.051 REF
0.110
0.126
0.098
0.114
0.020
0.030
0.043
0.053
0.059
0.069
0.020
0.030
0.392
0.408
DIM
A
A1
A2
A3
b
b1
b2
c
D
Millimeters
Min.
Max.
4.300
4.700
1.300 REF
2.800
3.200
2.500
2.900
0.500
0.750
1.100
1.350
1.500
1.750
0.500
0.750
9.960
10.360
DIM
E
e
F
Φ
h
L
L1
L2
Inches
Min.
Max.
0.583
0.598
0.100*
0.106 REF
0.138 REF
0.000
0.012
1.102
1.118
0.067
0.075
0.075
0.083
Millimeters
Min.
Max.
14.800
15.200
2.540*
2.700 REF
3.500 REF
0.000
0.300
28.000
28.400
1.700
1.900
1.900
2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
MTN14N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C715FP
Issued Date : 2009.09.16
Revised Date : 2011.03.29
Page No. : 9/9
TO-220FP (S Forming) Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN14N60FP
CYStek Product Specification