MTB02N03Q8

CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB02N03Q8
BVDSS
ID
RDSON@VGS=10V, ID=25A
RDSON@VGS=4.5V, ID=15A
30V
25A
2.2mΩ(typ)
2.3mΩ(typ)
Description
The MTB02N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating package
Symbol
Outline
MTB02N03Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTB02N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.3mH, ID=25A, VDD=15V
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation *3
TA=70℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
30
±20
25
20
100 *1
25
188
0.3 *2
3
2.1
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
20
40 *3
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 100°C/W when mounted on minimum copper pad.
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
RDS(ON)
Dynamic
Ciss
Coss
Crss
MTB02N03Q8
*1
Min.
Typ.
Max.
Unit
30
1.0
-
1.6
35
2.2
2.3
2.5
±100
1
25
3.2
4
V
V
S
nA
-
7032
898
843
-
Test Conditions
mΩ
mΩ
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=10V, ID=25A
VGS=±20V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, Tj=125°C
VGS=10V, ID=25A
VGS=4.5V, ID=15A
pF
VGS=0V, VDS=15V, f=1MHz
μA
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf
*1, 2
Rg
Min.
-
Typ.
90
66
23
37
72
43
230
110
2
Max.
-
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
0.8
35
20
25
50
1.2
-
Unit
Test Conditions
nC
VDS=15V, ID=25A
ns
VDS=15V, ID=1A, VGS=10V,
RGS=6Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=25A, VGS=0V
IF=25A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB02N03Q8
MTB02N03Q8
Package
SOP-8
(Pb-free lead plating package)
Shipping
Marking
2500 pcs / Tape & Reel
B02N03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
50
240
ID, Drain Current(A)
200
BVDSS, Drain-Source Breakdown
Voltage(V)
7V,8V,9V,10V
6V
160
VGS=5V
VGS=4V
120
80
VGS=3V
VGS=2V
45
40
35
30
20
-100
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
ID=250μA,
VGS=0V
25
40
10
Static Drain-Source On-State resistance vs Drain Current
200
1.2
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
VGS=3V
10
VGS=4.5V
1
0.001
VGS=10V
0.01
0.1
1
ID, Drain Current(A)
10
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=25A
80
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-50
70
60
50
40
30
20
10
8
7
VGS=10V, ID=25A
6
5
4
3
2
1
0
0
0
MTB02N03Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
10000
C oss
Crss
1000
VGS(th), Threshold Voltage(V)
Capacitance---(pF)
Ciss
ID=250μA
1.8
1.6
1.4
1.2
1
0.8
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=25A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
20
40
60
80
100
Qg, Total Gate Charge(nC)
120
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
100
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
10μs
RDS(ON) Limit
100μs
1ms
10
10ms
1
TA=25°C,
Tj=150°C,VGS=10V
100m
25
20
15
10
TA=25°C
VGS=10V
5
DC
0
0.1
0.01
MTB02N03Q8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
100
ZθJC(t), Thermal Response
D=0.5
10
0.2
1.ZθJA(t)=40 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
0.1
0.05
0.02
1
0.01
Single Pulse
0.1
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB02N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB02N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB02N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C575Q8
Issued Date : 2012.01.18
Revised Date :
Page No. : 9/9
SOP-8 Dimension
Marking:
B02
N03
Device Name
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB02N03Q8
CYStek Product Specification