MTN10N65FPG

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN10N65FPG
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 1/10
BVDSS : 650V
RDS(ON) : 0.82Ω
ID : 10A
Description
The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• Pb-free lead plating and halogen-free package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Symbol
Outline
MTN10N65FPG
G：Gate
D：Drain
S：Source
MTN10N65FPG
TO-220FP
G D S
CYStek Product Specification
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 2/10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note 3)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
EAR
dv/dt
650
±30
10*
6
40*
237
5
3.0
V
V
A
A
A
V/ns
TL
300
°C
TPKG
260
°C
Pd
50
0.4
-55~+150
W
W/°C
°C
Tj, Tstg
*Drain current limited by maximum junction temperature
mJ
Note : 1. TJ=+25℃ to +150℃.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD≤10A, dI/dt≤100A/μs, VDD≤BVDSS, TJ=+150℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN10N65FPG
Symbol
Rth,j-c
Rth,j-a
Value
2.5
100
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 3/10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
650
∆BVDSS/∆Tj
VGS(th)
2.0
*GFS
IGSS
IDSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
Typ.
Max.
Unit
Test Conditions
0.6
6.8
0.75
4.0
±100
25
250
0.82
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=5A
VGS=±30
VDS =650V, VGS =0
VDS =520V, VGS =0, Tj=125°C
VGS =10V, ID=6A
53
10.7
22.3
19
16
49
16
2516
182.2
71
-
nC
ID=10A, VDD=325V, VGS=10V
ns
VDD=325V, ID=10A, VGS=10V,
RG=9.1Ω
pF
VGS=0V, VDS=25V, f=1MHz
352
2.9
1.5
10
40
528
4.35
V
IS=10A, VGS=0V
A
VD=VG=0, VS=1.3V
ns
μC
VGS=0, IF=10A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN10N65FPG
MTN10N65FPG
Package
TO-220FP
(Pb-free lead plating and halogen-free package)
Shipping
50 pcs/tube
CYStek Product Specification
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 4/10
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
2
20
Drain Current - I D(A)
18
16
15V
10V
9V
7V
14
12
10
Static Drain-Source On-state
Resistance-RDS(on) (Ω)
6V
5.5V
8
5V
6
4
2
1.5
1
0.5
ID=6A,
VGS=10V
VGS=4.5V
0
0
10
20
30
Drain-Source Voltage -VDS(V)
0
-100
40
-50
30
1
VGS=10V
0.8
Ta=25°C
25
Drain Current-I D(on)(A)
Static Drain-Source On-State
Resistance-R DS(on)(Ω)
150
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
0.6
0.4
0.2
VDS=30V
20
15
VDS=10V
10
5
0
0
0.1
1
10
Drain Current-ID(A)
0
100
10
15
20
Body Diode Forward Voltage Variation vs Source
Current and Temperature
100
5
Reverse Drain Current-I DR (A)
Ta=25°C
ID=6A
4
5
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State
Resistance-R DS(ON)(Ω)
0
50
100
Ambient Temperature-Ta(°C)
3
2
1
VGS=0V
10
Ta=150°C
1
Ta=25°C
0.1
0
4
MTN10N65FPG
6
8
10
Gate-Source Voltage-VGS(V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 5/10
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
10000
800
Drain-Source Breakdown Voltage
BVDSS(V)
Capacitance-(pF)
f=1MHz
Ciss
1000
Coss
100
750
700
650
ID=250μA,
VGS=0V
Crss
10
0
5
10
15
20
25
Drain-to-Source Voltage-VDS (V)
600
-100
30
-50
50
100
150
200
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
VDS=130V
Gate-Source Voltage---VGS(V)
10μ
100μs
10
Drain Current --- ID(A)
0
Ambient Temperature-Tj(°C)
1ms
10ms
1
100ms
Operation in this area is
limited by RDS(ON)
0.1
DC
Single pulse
Tc=25°C; Tj=150°C
VDS=325V
VDS=520V
8
6
4
2
ID=10A
0
0.01
1
10
10
100
Drain-Source Voltage -VDS(V)
1000
0
10
20
30
40
50
60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
10
8
(A)
Maximum Drain Current---I D
12
6
4
2
0
25
50
75
100
125
150
175
Case Temperature---TC (°C)
MTN10N65FPG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 6/10
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
1
D=0.5
1.ZθJC(t)=2.5°C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN10N65FPG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 7/10
Test Circuit and Waveforms
MTN10N65FPG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 8/10
Test Circuit and Waveforms(Cont.)
MTN10N65FPG
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 9/10
TO-220FP Dimension
Marking:
Device Name
CYS
10N65
Date Code
□□□□G
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
*Typical
Millimeters
Min.
Max.
4.20
4.80
2.50
3.10
2.20
2.80
0.74
0.78
0.90
1.50
1.30
1.90
0.30
0.90
DIM
A
A2
A3
b
b1
b2
c
Inches
Min.
Max.
0.1654
0.1890
0.0984
0.1220
0.0866
0.1102
0.0291
0.0307
0.0354
0.0591
0.0512
0.0748
0.0118
0.0354
DIM
D
E
e
F
H2
L
L1
Millimeters
Min.
Max.
9.70
10.30
15.70
16.30
2.35
2.75
3.20
3.80
6.90
7.50
29.20
30.80
3.40
3.80
Inches
Min.
Max.
0.3819
0.4055
0.6181
0.6417
0.0925
0.1083
0.1260
0.1496
0.2717
0.2953
1.1496
1.2126
0.1339
0.1496
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN10N65FPG
CYStek Product Specification