Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 1/6 CYStech Electronics Corp. High –speed switching diode CMBD914N3 Description The CMBD914N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit Outline CMBD914N3 2 SOT-23 1 Cathode 3 1：Anode 2：Not Connected 3：Cathode Anode NC Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetitive peak forward current: max. 500mA. • Pb-free package Applications • High-speed switching in thick and thin-film circuits. CMBD914N3 CYStek Product Specification Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=25℃ prior to surge t=1μs t=1ms t=1s Total power dissipation(Note 1) Junction Temperature Storage Temperature Symbol VRRM VR IF IFRM IFSM Ptot Tj Tstg Min - Max 110 100 215 500 Unit V V mA mA - 4 1 0.5 250 150 +150 A A A mW °C °C -65 Note 1: Device mounted on an FR-4 PCB. Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Symbol Conditions Min Typ. - - - - - IF=1mA IF=10mA IF=50mA IF=150mA VR=25V VR=100V VR=25V, Tj=150℃ VR=100V, Tj=150℃ Forward voltage VF Reverse current IR Diode capacitance Cd Reverse recovery time trr Forward recovery voltage Vfr VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA when switched from IF=10mA tr=20ns Max 715 855 1 1.25 25 1 30 50 Unit mV mV V V nA μA μA μA - 1.5 pF - - 4 ns - - 1.75 V Thermal Characteristics Symbol Parameter Rth,j-tp Rth, j-a thermal resistance from junction to tie-point thermal resistance from junction to ambient Conditions Value Note 1 330 500 Unit ℃/W ℃/W Note 1: Device mounted on an FR-4 PCB. CMBD914N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 3/6 Characteristic Curves Forward Capacitance Biased & Reverse-Biased Voltage & Forward Voltage Current Capacitance & Reverse-Biased Voltage 1 300 Capacitance-Cd (pF) Current-IF (mA) Capacitance-Cd (pF) 450 1 150 0.1 0 0.10 500 1000 1 10 1500 2000 100 Reverse ForwardBiased Biased Voltage-VF(mV) Voltage-VR (V) 0.1 0.1 1 10 Reverse Biased Voltage-VR (V) 100 Power Derating 300 PD(mW), Power Dissipation 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 o Ta( C ), Ambient Temperature Ordering Information Device CMBD914N3 CMBD914N3 Package SOT-23 (Pb-free package) Shipping Marking 3000 pcs / Tape & Reel A6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 4/6 Reel Dimension Carrier Tape Dimension CMBD914N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. CMBD914N3 CYStek Product Specification Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE A6 S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H K Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 Style:Pin.1. Anode 2. Not Connected 3.Cathode J DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. CMBD914N3 CYStek Product Specification