MTP5614N6

Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 1/8
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTP5614N6
BVDSS
ID
RDSON@VGS=-10V, ID=-3A
RDSON@VGS=-4.5V, ID=-2.7A
-60V
-3.5A
72mΩ(typ.)
98mΩ(typ.)
Description
The MTP5614N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Equivalent Circuit
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
MTP5614N6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
(Note 1)
ID
-3.5
Continuous Drain Current @VGS=-10V, TA=100 °C (Note 1)
ID
-2.2
Pulsed Drain Current (Note 2, 3)
IDM
-20
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
1.6
W
0.013
W / °C
Tj ; Tstg
-55~+150
°C
Rth,ja
78
°C/W
Continuous Drain Current @VGS=-10V, TA=25 °C
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
Unit
V
A
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
MTP5614N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 2/8
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Min.
Typ.
Max.
Unit
-60
-1
-
0.4
-1.8
72
98
5.8
-2.5
±100
1
25
95
130
-
V
V/℃
V
nA
-
929
48
33
10
22
27
14
14
3
3.4
-
Test Conditions
S
VGS=0V, ID=-250μA
Reference to 25℃, ID=250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V, Tj=70℃
VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2.7A
VDS=-5V, ID=-3A
pF
VDS=-30V, VGS=0V, f=1MHz
ns
VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-30V, ID=-3.5A, VGS=-10V
μA
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Source Drain Diode
Symbol
*IS
*ISM
*VSD
*Trr
Qrr
Min.
-
Typ.
-0.78
12
7
Max.
-3.5
-20
-1.2
-
Unit
Test Conditions
A
V
ns
nC
IS=-2A,VGS=0V
IS=-2A,VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTP5614N6-0-T1-G
MTP5614N6
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 3/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
4.5V
15
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
20
-VGS=4V
-VGS=3.5V
10
-VGS=3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=2.5V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-3V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4V
VGS=-3.5V
100
VGS=-4.5V
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
200
4
6
8
-IDR, Reverse Drain Current (A)
10
2
R DS(ON) , Normalized Static DrainSource On-State Resistance
180
160
140
ID=-3A
ID=-2.7A
120
100
80
60
40
20
1.8
VGS=-10V, ID=-3A
1.6
1.4
1.2
1
VGS=-4.5V, ID=-2.7A
0.8
0.6
0.4
0
0
MTP5614N6
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 4/8
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
10
10
VDS=-48V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-10V
Pulsed
Ta=25°C
8
VDS=-30V
6
VDS=-15V
4
2
ID=-3.5A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs JunctionTemperature
100
4
RDS(ON)
Limit
10
ID, Maximum Drain Current(A)
100μs
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
1ms
10ms
1
100ms
1s
TA=25°C, Tj=150°C
RθJA=78°C/W, VGS=-10V
Single Pulse
0.1
DC
0.01
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V, RθJA=78°C/W
0.5
0
0.01
MTP5614N6
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 5/8
Typical Characteristics (Cont.)
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTP5614N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTP5614N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP5614N6
CYStek Product Specification
Spec. No. : C733N6
Issued Date : 2013.08.12
Revised Date : 2013.09.06
Page No. : 8/8
CYStech Electronics Corp.
SOT-26 Dimension
Marking:
Device Name
●
5614
□□□□
●
Date Code
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
Pin 4. Source
Pin 5. Drain
Pin 6. Drain
Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
DIM
E
E1
e
e1
L
θ
Millimeters
Min.
Max.
1.500
1.700
2.650
2.950
0.950 (BSC)
1.800
2.000
0.300
0.600
0°
8°
(D)
(D)
(G)
(S)
(D)
(D)
Inches
Min.
Max.
0.059
0.067
0.104
0.116
0.037 (BSC)
0.071
0.079
0.012
0.024
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP5614N6
CYStek Product Specification