CYStech Electronics Corp. Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 1/9 Dual P-Channel Logic Level Enhancement Mode Power MOSFET MTB60B06Q8 BVDSS -60V ID RDSON(MAX)@VGS=-10V, ID=-3.5A -4.5A 56mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-3A 66mΩ(typ.) Description The MTB60B06Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • RDS(ON)=75mΩ(max.)@VGS=-10V, ID=-3.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & halogen-free package Equivalent Circuit MTB60B06Q8 Outline SOP-8 G:Gate S:Source D:Drain MTB60B06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, TC=25 °C Continuous Drain Current, TC=100 °C Continuous Drain Current, TA=25 °C Continuous Drain Current, TA=70 °C Pulsed Drain Current (Note 1) TA=25°C (Note 3) TA=100°C Operating Junction and Storage Temperature Range Power Dissipation Symbol Limits VDS VGS -60 ±20 -7 -5 -4.5 -3.8 -20 2.4 1.3 -55~+175 ID IDM PD Tj ; Tstg Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 25 62.5 *3 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad MTB60B06Q8 Unit °C/W °C/W CYStek Product Specification Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 3/9 CYStech Electronics Corp. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS VGS(th) IGSS -60 -1 -4.5 - -1.5 56 66 9 -2.5 ±100 -1 -10 75 90 - V V nA - 21 4.4 5.1 15 10 47 25 1460 72 61 - - -0.78 12 8 -2.3 -9.2 -1.2 - Test Conditions Static IDSS ID(ON) *1 *RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr *1 Qrr *1 S VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VGS=±20V VDS =-48V, VGS =0V VDS =-48V, VGS =0V, Tj=125°C VDS =-5V, VGS =-10V VGS =-10V, ID=-3.5A VGS =-4.5V, ID=-3A VDS =-5V, ID=-3.5A nC VDS=-30V, ID=-4.5A, VGS=-10V ns VDS=-30V, ID=-1A,VGS=-10V, RG=6Ω pF VGS=0V, VDS=-25V, f=1MHz μA A mΩ A V ns nC IF= IS, VGS=0V IF= IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB60B06Q8-0-T3-G MTB60B06Q8 Package SOP-8 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 20 -ID, Drain Current(A) 10V,9V,8V,7V,6V,5V,4V 15 10 -VGS=3V 5 1.2 1 0.8 0.6 ID=-250μA, VGS=0V -VGS=2V 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 -VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-2.5V 100 VGS=-3V VGS=-3.5V VGS=-4.5V VGS=-10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 360 1.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 400 320 280 240 200 ID=-3.5A 160 120 80 1 MTB60B06Q8 VGS=-10V, ID=-3.5A 0.8 0.6 0.2 10 VGS=-4.5V, ID=-3A 1.2 0 4 6 8 -VGS, Gate-Source Voltage(V) 10 1.4 0.4 2 4 6 8 -IDR, Reverse Drain Current(A) 1.6 40 0 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.6 1.4 ID=-250uA 1.2 1 0.8 0.6 0.4 0.2 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Gate Charge Characteristics Maximum Safe Operating Area 10 100 10 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) VDS=-12V RDSON limited 100μs 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=175°C VGS=-10V, RθJA=62.5°C/W Single Pulse DC 8 VDS=-30V VDS=-48V 6 4 2 ID=-4.5A 0 0.01 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 Forward Transfer Admittance vs Drain Current 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs Junction Temperature 100 5 -ID, Maximum Drain Current(A) GFS, Forward Transfer Admittance(S) 4 10 1 VDS=-5V Pulsed Ta=25°C 0.1 4.5 4 3.5 3 2.5 2 1.5 1 0.5 TA=25°C, VGS=-10V, RθJA=62.5°C/W 0 0.01 0.01 MTB60B06Q8 0.1 1 10 -ID, Drain Current(A) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 300 TJ(MAX) =175°C TA=25°C θJA=62.5°C/W 250 VDS=-10V 15 200 -ID, Drain Current(A) Power (W) Typical Transfer Characteristics 20 150 100 10 5 50 0 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 0 1 2 3 -VGS , Gate-Source Voltage(V) 4 5 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM *RθJA(t) 4.RθJA=62.5°C/W 0.1 0.01 0.2 0.1 0.05 0.02 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB60B06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB60B06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB60B06Q8 CYStek Product Specification Spec. No. : C796Q8 Issued Date : 2013.07.08 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name Date Code J E D B60B06 K Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1850 0.2007 0.1457 0.1614 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 0.0472 0.0638 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.70 5.10 3.70 4.10 5.80 6.20 1.27* 0.33 0.51 3.74 3.88 1.20 1.62 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0031 0.0110 0.0157 0.0323 0.0074 0.0102 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.08 0.28 0.40 0.83 0.19 0.26 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB60B06Q8 CYStek Product Specification