MTP4411AQ8

CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 1/8
P-Channel Enhancement Mode MOSFET
MTP4411AQ8
BVDSS
ID
RDSON@VGS=-10V, ID=-5.3A
RDSON@VGS=-4.5V,ID=-4.2A
-30V
-5.3A
35mΩ(typ)
56mΩ(typ)
Description
The MTP4411AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOP-8
MTP4411AQ8
G：Gate
S：Source
D：Drain
Ordering Information
Device
Package
Shipping
MTP4411AQ8-0-T3-G
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs/ Tape & Reel
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Symbol
BVDSS
VGS
ID
IDM
Pd
Tj
Tstg
Limits
-30
±20
-5.3
-24
2.5
0.02
-55~+150
-55~+150
Unit
V
V
A
A
W
W / °C
°C
°C
Note : 1.Surface mounted on FR-4 board, t≤10sec.
2.Pulse width ≤300μs, Duty Cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
25
50 (Note )
Unit
°C/W
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-30
V
VGS=0, ID=-250μA
VGS(th)
-1
-1.5
-2.5
V
VDS=VGS, ID=-250μA
IGSS
±100
nA
VGS=±20V, VDS=0
IDSS
-1
μA
VDS=-30V, VGS=0
35
40
ID=-5.3A, VGS=-10V
*RDS(ON)
mΩ
56
60
ID=-4.2A, VGS=-4.5V
*GFS
8
S
VDS=-5V, ID=-5.3A
Dynamic
Ciss
730
pF
VDS=-15V, VGS=0, f=1MHz
Coss
80
Crss
68
*td(ON)
9
VDD=-15V, ID=-1A,
*tr
10
ns
VGS=-10V, RG=6Ω, RD=15Ω
*td(OFF)
37
*tf
23
*Qg
11.7
nC
VDS=-15V, VGS=-10V, ID=-5.3A
*Qgs
2.1
*Qgd
2.9
Source Drain Diode
*VSD
-0.84
-1.2
V
VGS=0V, IS=-1.7A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 3/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
18
-ID, Drain Current (A)
40
-10V
-9
-8
-7
-4.5V
16
14
-BVDSS, Drain-Source Breakdown
Voltage(V)
20
VGS=-4V
VGS=-3.5V
12
10
8
VGS=-3V
6
4
35
30
ID=-250μA,
VGS=0V
VGS=-2.5V
2
25
-100
0
0
2
4
6
-VDS, Drain-Source Voltage(V)
8
-50
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
200
Source Drain Current vs Source-Drain Voltage
10000
1000
VGS=-2.5V
100
VGS=-4.5V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=-10V
0.2
10
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IS, Source Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
420
100
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
380
340
300
260
220
180
ID=-5.3A
140
100
60
80
VGS=-4.5V, ID=-4.2A
60
40
VGS=-10V, ID=-5.3A
20
20
0
MTP4411AQ8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 4/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
-VGS(th) , Threshold Voltage(V)
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
ID=-250μA
1.8
1.6
1.4
1.2
1
0.8
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
Gate Charge Characteristics
10
1
VDS=-5V
Pulsed
TA=25°C
0.1
8
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
10
100
6
4
VDS=-15V
ID=-5.3A
2
0.01
0
0.01
0.1
1
10
-ID, Drain Current(A)
100
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
7
100
10
-ID, Maximum Drain Current(A)
10μs
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
100μs
1ms
10ms
1
Operation in this area
is limited by RDS(ON)
0.1
100ms
DC
6
5
4
3
2
TA=25°C, VGS=-10V
1
0
0.01
0.1
MTP4411AQ8
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTP4411AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP4411AQ8
CYStek Product Specification
Spec. No. : C386Q8
Issued Date : 2007.06.08
Revised Date : 2013.09.05
Page No. : 8/8
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
Date Code
H
4411
□□□□
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1890
0.2007
0.1496
0.1654
0.2283
0.2441
0.0480
0.0519
0.0138
0.0193
0.1472
0.1527
0.0531
0.0689
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.80
5.10
3.80
4.20
5.80
6.20
1.22
1.32
0.35
0.49
3.74
3.88
1.35
1.75
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0098 REF
0.0118
0.0354
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.25 REF
0.30
0.90
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP4411AQ8
CYStek Product Specification