MBNP2074G6

Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 1/10
CYStech Electronics Corp.
N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device
MBNP2074G6
Description
The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
Outline
MBNP2074G6
TSOP-6
D1
G：Gate
B : Base
S：Source E : Emitter
D：Drain C : Collector
MBNP2074G6
S1
C2
G1
E2
B2
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
BVDSS
VGS
VCBO
VCEO
VEBO
ID
IDM
IC
ICM
IBM
Pd
Tj, Tstg
Rth,ja
Limits
N-channel
PNP
30
±12
-50
-30
-7
100
400
-1.5
-3
-300
1.14
0.01
-55~+150
110
Unit
V
V
V
V
V
mA
mA
A
A
mA
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel MOSFET Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
Min.
Typ.
Max.
Unit
30
0.8
20
1.3
3.4
6.9
50
1.5
±1
100
8
13
-
V
V
μA
nA
12.5
7.3
3.5
15
35
75
75
1.1
1.7
0.88
1.2
GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
Rg
Source-Drain Diode
*VSD
-
Test Conditions
mS
VGS=0, ID=100μA
VDS=3V, ID=100μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
pF
VDS=5V, VGS=0, f=1MHz
ns
VDD≒5V, ID=10mA, VGS=5V, RL=500Ω,
RG=10Ω
Ω
f=1MHz
V
VGS=0V, IS=100mA
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MBNP2074G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 3/10
PNP BJT Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-50
-30
-7
-0.5
120
40
-
Typ.
-0.24
150
12
Max.
-100
-100
-0.4
-0.5
-0.8
390
-
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-7V, IC=0
IC=-500mA, IB=-20mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
MBNP2074G6
MBNP2074G6
Package
TSOP-6
(Pb-free lead plating & halogen-free package)
Shipping
Marking
3000 pcs / Tape & Reel
2074
CYStek Product Specification
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 4/10
CYStech Electronics Corp.
N-channel MOSFET Characteristic Curves
Gate Threshold Voltage vs Channel Temperature
Typical Output Characteristics
2
0.15
3.5V
3V
TA=25°C
Gate Threshold Voltage---VGS(th)(V)
Drain Current --- I D(A)
4V
0.1
2.5V
0.05
2V
1.5
1
0.5
VGS=1.5V
0
0
0
-50
4
1
2
3
Drain-Source Voltage ---VDS(V)
125
150
5
200
25°C
VGS=4V
VDS=3V
75°C
Static Drain-Source On-state
Resistance(Ω)
Drain Current ---I D(mA)
0
25
50
75
100
Channel Temperature---Tch(°C)
Static Drain-Source On-state Resistance with Temperature
Typical Transfer Characteristics
150
125°C
100
50
0
4
ID=100mA
3
ID=50mA
2
0
1
2
3
Gate-Source Voltage---VGS(V)
-50
4
-25
0
25
50
75
100
125
150
Channel Temperature---Tch(°C)
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10
10
9
Static Drain-Source On-State Resistance--RDS(on) (Ω)
Static Drain-Source On-State Resistance--RDS(on)(Ω)
-25
TA=25°C
8
VGS=2.5V
7
6
5
4
3
VGS=4V
2
1
TA=125°C
9
8
7
VGS=2.5V
6
5
4
VGS=4V
3
2
1
1
MBNP2074G6
10
100
Drain Current---I D(mA)
1000
1
10
100
Drain Current---ID(mA)
1000
CYStek Product Specification
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 5/10
CYStech Electronics Corp.
N-channel MOSFET Characteristic Curves(Cont.)
Static Drain-Source On-State Resistance vs Drain Current
Static Drain-Source On-State Resistance vs Drain Current
10
VGS=4V
Static Drain-Source On-State ResistanceRDS(ON) (Ω)
Static Drain-Source On-State ResistanceRDS(ON) (Ω)
100
VGS=2.5V
Ta=25°C
Ta=75°C
10
Ta=125°C
Ta=25°C
Ta=75°C
1
1
1
10
100
Drain Current---I D(mA)
1
1000
1000
10
10
9
9
ID=50mA
8
Static Drain-Source On-State
Resistance---RDS(ON) (Ω)
Static Drain-Source On-State
Resistance---RDS(ON) (Ω)
10
100
Drain Current---ID(mA)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
7
6
TA=75°C
5
4
TA=125°C
3
2
TA=25°C
1
ID=100mA
8
7
6
5
TA=75°C
4
TA=125°C
3
2
TA=25°C
1
0
0
0
2
4
6
8
Gate-Source Voltage---VGS(V)
0
10
Reverse Drain Current vs Source-Drain Voltage(I)
2
4
6
8
Gate-Source Voltage---VGS(V)
10
Reverse Drain Current vs Source-Drain Voltage(II)
1000
1000
Reverse Drain Current-I DR(mA)
Reverse Drain Current-I DR(mA)
Ta=125°C
100
TA=125°C
TA=25°C
10
TA=75°C
1
100
VGS=4V
VGS=0V
10
1
0.1
0.1
0
MBNP2074G6
0.5
1
Source-Drain Voltage-VSD(V)
1.5
0
0.5
1
Source-Drain Voltage-VSD(V)
1.5
CYStek Product Specification
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 6/10
CYStech Electronics Corp.
N-channel MOSFET Characteristic Curves(Cont.)
Foreward Transfer Admittance vs Drain Current
Capacitance vs Drain-to-Source Voltage
1000
Forward Transfer Admittance--YFS(mS)
Capacitance---(pF)
100
Ciss
10
C oss
Crss
1
VDS=3V
Ta=25°C
100
Ta=75°C
Ta=125°C
10
1
0
MBNP2074G6
10
20
Drain-Source Voltage---VDS(V)
30
1
10
100
Drain Current---ID(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 7/10
PNP BJT Characteristic Curves
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.9
0.25
0.2
0.8
Collector Current---IC(A)
Collector Current---IC(A)
1mA
800uA
0.15
600uA
0.1
500uA
400uA
300uA
0.05
200uA
5mA
4mA
0.7
0.6
0.5
2.5mA
0.4
2mA
0.3
1.5mA
1mA
0.2
0.1
IB=100uA
0
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
2
2
1.6
1.4
10mA
1.2
8mA
6mA
1
0.8
4mA
0.6
IB=2mA
0.4
25mA
1.8
20m
Collector Current---IC(A)
Collector Current---IC(A)
1.8
6
0.2
20mA
1.6
15mA
1.4
1.2
10mA
1
IB=5mA
0.8
0.6
0.4
0.2
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
6
Saturation Voltage vs Collector Current
10000
1000
100
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
VCE=2V
VCE=1V
1000
VCESAT@IC=50IB
100
10
VCESAT=20IB
VCESAT=10IB
10
1
1
MBNP2074G6
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 8/10
PNP BJT Characteristic Curves (Cont.)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
On Voltage---(mV)
Saturation Voltage---(mV)
10000
VBESAT@IC=10IB
1000
100
VBEON@VCE=1V
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
Capacitance vs Reverse-biased Voltage
10000
Transition Frequency vs Collector Current
1000
Transition Frequency---fT(MHz)
100
Capacitance---(pF)
10
100
1000
Collector Current---IC(mA)
Cob
10
VCE=5V
100
10
1
0.1
MBNP2074G6
1
10
Reverse-biased Voltage---VCB(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 9/10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MBNP2074G6
CYStek Product Specification
Spec. No. : C196G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 10/10
CYStech Electronics Corp.
TSOP-6 Dimension
Marking:
Style:
Pin 1. Gate1 (G1)
Pin 2. Emitter2 (E2)
Pin 3. Base2 (B2)
Pin 4. Collector2 (C2)
Pin 5. Source1 (S1)
Pin 6. Drain1 (D1)
●
2074
□□□□
Device Name
Date Code
6-Lead TSOP-6 Plastic
Surface Mounted Package
CYStek Package Code: G6
Inches
Min.
Max.
0.1063
0.1220
0.1024
0.1181
0.0551
0.0709
0.0748 REF
0.0374 REF
0.0374 REF
0.0118
0.0197
0.0276
0.0394
DIM
A
B
C
D
d1
d2
E
F
Millimeters
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.90 REF
0.95 REF
0.95 REF
0.30
0.50
0.70
1.00
DIM
G
H
I
J
K
L
M
Inches
Min.
Max.
0
0.0039
0.0098
0.0047 REF
0.0177 REF
0.0236 REF
0°
10°
0.0433
Millimeters
Min.
Max.
0
0.10
0.25
0.12 REF
0.45 REF
0.60 REF
0°
10°
1.10
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MBNP2074G6
CYStek Product Specification