Product Datasheet

AWT6652
High Efficiency ProEficientTM
UMTS 1900, 2100 (Band 1, 2)
LTE/WCDMA/CDMA Linear PAM
DATA SHEET - Rev 2.0
FEATURES
• CDMA/EVDO, WCDMA/HSPA and LTE
Compliant
• High Efficiency (R99 waveform):
•
46% @ POUT = +28.5 dBm
•
20% @ POUT = +17 dBm in LPM, without
DC/DC Converter
AWT6652
• Simple Calibration with only 2 Bias Modes
•
Optimized for SMPS Supply
• Low Leakage Current in Shutdown Mode: <4 µA
• Internal Voltage Regulator
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT Ports
• Optimized for a 50 Ω System
10 Pin 3 mm x 3 mm x 0.9 mm
Surface Mount Module
• Internal DC blocks on IN/OUT RF ports
• 1.8 V Control Logic
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
• Wireless Handsets and Data Devices for:
•
WCDMA/HSPA/LTE PCS Band 2
•
WCDMA Band 1
•
CDMA/EVDO Bandclass 1 & 14
•
Band 25 LTE Devices
GND at Slug (pad)
VBATT
PRODUCT DESCRIPTION
The AWT6652 PA is designed to provide highly linear
RFIN
output for WCDMA, CDMA and LTE handsets and
data devices with high efficiency at both high and
low power modes. This ProEficientTM PA can be used
with an external switch mode power supply (SMPS) to VMODE2 (N/C)
improve its efficiency and reduce current consumption
further at medium and low output powers. The
device is manufactured on an advanced InGaP HBT
VMODE1
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. There are two
selectable bias modes that optimize efficiency for
VEN
different output power levels, and a shutdown mode
with low leakage current, which increases handset talk
and standby time. The self-contained 3 mm x 3 mm x
0.9 mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50 Ω system.
08/2014
1
10
2
VCC
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
3
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
AWT6652
VBATT
1
10
RFIN
2
9
RFOUT
N/C
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
N/C
No Connection
4
VMODE1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
Mode Control Voltage 1
PA Enable Voltage
Coupler Output
Supply Voltage
DATA SHEET - Rev 2.0
08/2014
VCC
AWT6652
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
TYP
MAX
UNIT
RF Input (PIN)
-
0
10
dBm
VCC
0
3.4
5
V
VBATT
0
3.4
6
V
Control Voltage (VENABLE, VMODE)
0
1.8
3.5
V
Storage Temperature (TSTORAGE)
-40
25
150
°C
Functional operation to the specified performance is not implied under these conditions.
Operation of any single parameter in excess of the absolute ratings may cause permanent
damage. No damage occurs if one parameter is set at the limit while all other parameters
are set within normal operating ranges.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency (f)
1850
-
1915
MHz
UMTS Band 2, CDMA BC1 & 14
Supply Voltage (VCC)
+0.6
+3.4
+4.4
V
POUT < +28.5 dBm
Battery Voltage (VBATT)
+3.1
+3.4
+4.4
V
POUT < +28.5 dBm
Enable Voltage (VENABLE)
+1.35
0
+1.8
0
+3.1
+0.5
V
PA “on”
PA “shut down”
Mode Control Voltage (VMODE1)
+1.35
0
+1.8
0
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT) (1)
R99 WCDMA, HPM
HSPA (MPR = 0), HPM
LTE, HPM
R99 WCDMA, LPM
HSPA (MPR = 0), LPM
LTE, LPM
27.7
26.6
26.4
16.2
15.2
15.2
28.5
27.4
27.2
17
16
16
-
dBm
CDMA Output Power (1)
HPM
LPM
27.2
15.2
28
16
-
dBm
Case Temperature (TC)
-30
-
+90
°C
3GPP TS 34.121-1, Rel 8
Table C.11.1.3, for WCDMA
Subtest 1
TS 36.101 Rel 8 for LTE
CDMA2000, RC-1
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
Notes:
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.
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DATA SHEET - Rev 2.0
08/2014
AWT6652
Table 4: B 2 (1850 - 1910 MHz) Electrical Specifications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified)
PARAMETER
MIN
TYP
MAX
Gain
24.5
20
12
27
24.5
14.5
30
28
18
ACLR1 at 5 MHz offset (1)
-
-40
-53
-45
ACLR2 at 10 MHz offset (1)
-
Power-Added Efficiency (1)
UNIT
COMMENTS
POUT
VCC
VMODE1
dB
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-36
-36
-36
dBc
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-54
-65
-55
-48
-48
-48
dBc
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
40
-
46
26
20
-
%
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
Quiescent Current (Icq)
Low Bias Mode
-
18
-
mA
VMODE1 = +1.8 V
Mode Control Current
-
0.16
-
mA
through VMODE pin, VMODE1 = 1.8 V
Enable Current
-
0.02
-
mA
through VENABLE pin
BATT Current
-
2.8
-
mA
through VBATT pin, VMODE1 = +1.8 V
Leakage Current
-
3
10
µA
VBATT = +4.4 V, VCC = +4.4 V
VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band (2)
-
-133
-143
-
dBm/Hz
Harmonics
2fO
3fO, 4fO
-
-43
-55
-30
-35
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
17
20
23
dB
Directivity
-
20
-
dB
Coupler IN-OUT
Daisy Chain Insertion Loss
-
<0.25
-
dB
698 to 2620 MHz
Pin 8 to 6
Shutdown Mode
POUT < +28.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Spurious Output Level
(all suprious outputs)
Load mismatch stress with no
permanent degradation or failure
Phase Delta (HPM-LPM)
-
-
-70
dBc
8:1
-
-
VSWR
-
10
-
Deg
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
(2) Noise measured at 1930 MHz to 1990 MHz.
4
DATA SHEET - Rev 2.0
08/2014
POUT < +28.5 dBm, VMODE1 = 0 V
POUT < 17 dBm, VMODE1 = +1.8 V
POUT < +28.5 dBm
Applies over full operating range
AWT6652
Table 5: B 2 (1850 - 1910 MHz) Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24.5
-
27
24.5
14.5
30
-
ACLR E-UTRA (1)
at ± 10 MHz offset
-
-38
-52
-40
ACLR1 UTRA (1)
at ± 7.5 MHz offset
-
ACLR2 UTRA (1)
at ± 12.5 MHz offset
COMMENTS
POUT
VCC
VMODE1
dB
+27.2 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-34
-34
-34
dBc
+27.2 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-38
-52
-40
-36
-36
-36
dBc
+27.2 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-
-62
-67
-64
-40
-40
-40
dBc
+27.2 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
Power-Added Efficiency (1)
-
42
23.5
19.5
-
%
+27.2 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
Noise emissions B34
-
-38
-
LTE NS_05 PHS emissions
-
-48
-
Spurious Output Level
(all spurious outputs)
Load mismatch stress with
no permanent degradation or
failure
2010 - 2025 MHz, 100 RB QPSK
dBm/MHz LTE signal centered at 1970 MHz at
LTE max power
dBm/
300 kHz
-
-
<-70
dBc
8:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
5
DATA SHEET - Rev 2.0
08/2014
1884.5 - 1919.6 MHz
POUT < +27.2 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
AWT6652
Table 6: B 2 (1850 - 1910 MHz) Electrical Specifications - CDMA Operation (CDMA2000, RC-1)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24.5
-
27
24.5
15.5
30
-
Adjacent Channel Power (1)
at +1.25 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-50
-66
-59
Adjacent Channel Power (1)
at +1.98 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
Power-Added Efficiency (1)
-
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
POUT
VCC
VMODE1
dB
+28 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-46
-46
-46
dBc
+28 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-55
-74
-61
-53
-53
-53
dBc
+28 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
45
23
19.5
-
%
+28 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0V
0V
1.8 V
-
-
<-70
dBc
8:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
6
COMMENTS
DATA SHEET - Rev 2.0
08/2014
POUT < +28 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
AWT6652
Table 7: B 1 (1920 - 1980 MHz) Electrical Specifications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system, unless otherwise specified)
PARAMETER
MIN
TYP
MAX
UNIT
24
12
26
15
29
17.5
ACLR1 at 5 MHz offset (1)
-
-40
-42
ACLR2 at 10 MHz offset (1)
-
Power-Added Efficiency (1)
COMMENTS
POUT
VCC
VMODE1
dB
+27.3 dBm
+17 dBm
3.4 V
3.4 V
0V
1.8 V
-36
-36
dBc
+27.3 dBm
+17 dBm
3.4 V
3.4 V
0V
1.8 V
-52
-55
-47
-47
dBc
+27.3 dBm
+17 dBm
3.4 V
3.4 V
0V
1.8 V
35
17
40
23
-
%
+27.3 dBm
+17 dBm
3.4 V
3.4 V
0V
1.8 V
Quiescent Current (Icq)
Low Bias Mode
-
18
-
mA
through VCC pin, VMODE1 = +1.8 V
Mode Control Current
-
0.16
-
mA
through VMODE pin, VMODE1 = 1.8 V
Enable Current
-
0.02
-
mA
through VENABLE pin
BATT Current
-
2.8
-
mA
through VBATT pin, VMODE1 = +1.8 V
Leakage Current
-
3
10
µA
VBATT = +4.4 V, VCC = +4.4 V
VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band (2)
-
-135
-140
-
dBm/Hz
Harmonics
2fO
3fO, 4fO
-
-43
-55
-
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
Gain
POUT < +27.3 dBm, VMODE1 = 0 V
POUT < 17 dBm, VMODE1 = +1.8 V
POUT < +27.3 dBm
17
20
23
dB
Directivity
-
20
-
dB
Coupler IN-OUT
Daisy Chain Insertion Loss
-
<0.25
-
dB
698 to 2620 MHz
Pin 8 to 6
Shutdown Mode
POUT < +27.3 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Spurious Output Level
(all suprious outputs)
Load mismatch stress with no
permanent degradation or failure
Phase Delta (HPM-LPM)
-
-
-70
dBc
8:1
-
-
VSWR
-
10
-
Deg
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
(2) Noise measured at 2110 MHz to 2170 MHz.
7
DATA SHEET - Rev 2.0
08/2014
Applies over full operating range
AWT6652
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE1 voltages.
Bias Modes
The power amplifier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to VMODE1.
The Bias Control table lists the recommended modes
of operation for various applications. VMODE2 is not
necessary for this PA.
Two operating modes are available to optimize current
consumption. High Bias/High Power operating mode
is for POUT levels > 16 dBm. At around 17 dBm output
power, the PA should be “Mode Switched” to Low power
mode for lowest quiescent current consumption.
Vcontrols
Venable/Vmode(s)
On Sequence Start
T_0N = 0µ
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
Off Sequence Start
T_0FF = 0µ
ON Sequence
OFF Sequence
RFIN
notes 1,2
VEN
VCC
note 1
T_0N+1µS
T_0N+3µS
Referenced After 90% of Rise
Time
T_0FF+2µS T_0FF+3µS
Referenced Before10% of Fall
Time
Figure 3: Recommended ON/OFF Timing Sequence
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF defined as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended.
8
DATA SHEET - Rev 2.0
08/2014
AWT6652
Table 8: Bias Control
POUT
LEVELS
BIAS MODE
VENABLE
VMODE1
VCC
VBATT
High power
(High Bias Mode)
> +16 dBm
High
+1.8 V
0V
1.5 - 4.4 V
> 3.1 V
Med/low power
(Low Bias Mode)
≤ +17 dBm
Low
+1.8 V
+1.8 V
0.6 - 4.4 V
> 3.1 V
-
Shutdown
0V
0V
0.6 - 4.4 V
> 3.1 V
APPLICATION
Shutdown
9
DATA SHEET - Rev 2.0
08/2014
AWT6652
VBATT
VCC
C2
2.2 µF
C1
33pF
GND at slug
1
2
RFIN
3
VMODE2
VMODE1
VEN
10
VBATT
VCC
RFIN
RFOUT
N/C
4
VMODE1
5
VEN
CPLIN
8
GND
7
VMODE1
VEN
GND
GND
VMODE2
VCC
GND
GND
C1
RFOUT
C4
C3
CPLOUT
VBATT
Figure 4: Evaluation Board Schematic
RFIN
CPLIN
Figure 5: Evaluation Board Layout
10
DATA SHEET - Rev 2.0
08/2014
C4
2.2µF ceramic
9
CPLOUT 6
C2
C3
0.1µF
RFOUT
CPLIN
CPLOUT
AWT6652
ProEficientTM
The AWT6652 power amplifier module is based on
ANADIGICS proprietary ProEficient™ technology.
The PA is designed to operate up to 17 dBm in the low
power mode, thus eliminating the need for three gain
states, while still maintaining low quiescent current
and high efficiency in low and medium power levels.
Average weighted efficiency can be increased by
using an external switch mode power supply (SMPS)
or DC/DC converter to reduce VCC.
The directional “daisy chainable” coupler is integrated
within the PA module, therefore there is no need for
external couplers.
voltage source. The PA is turn on/off is controlled
by VEN pin. A single VMODE control logic (VMODE1) is
needed to operate this device. AWT6652 requires
only two calibration sweeps for system calibration,
thus saving calibration time.
Figure 6 shows one application example on mobile
board. C1 and C2 are RF bypass caps and should
be placed nearby pin 1 and pin 10. Bypass caps
C3 and C4 may not be needed. Also a “T” matching
topology is recommended at PA RFIN and RFOUT
ports to provide matching between input TX Filter and
Duplexer / Isolator.
The AWT6652 has an integrated voltage regulator,
which eliminates the need for an external constant
SMPS
VBATT
C2
GND
RFIN
TX filter
C1
C3
GND
at slug
GND
VBATT
VCC
RFIN
RFOUT
N/C
CPL IN
VMODE1
VEN
GND
GND
RFOUT
50Ω
GND
To
Detector
PA_R0
PA_ON
Figure 6: Typical Application Circuit
11
DATA SHEET - Rev 2.0
08/2014
GND
Duplexer
CPLOUT
BB
C4
AWT6652
PACKAGE OUTLINE
Figure 7: Package Outline - 10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module
Pin 1 Identifier
Date Code
YY=Year; WW=Work week
6652
Part Number
LLLLNN
YYWWCC
Lot Number
Country Code (CC)
Figure 8: Branding Specification
12
DATA SHEET - Rev 2.0
08/2014
AWT6652
PCB AND STENCIL DESIGN GUIDELINE
Figure 9: Recommended PCB Layout Information
13
DATA SHEET - Rev 2.0
08/2014
AWT6652
COMPONENT PACKAGING
Pin 1
Figure 10: Carrier Tape
Figure 11: Reel
14
DATA SHEET - Rev 2.0
08/2014
AWT6652
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AWT6652Q7
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 0.9 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWT6652P9
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 0.9 mm Partial Tape and Reel
Surface Mount Module
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
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DATA SHEET - Rev 2.0
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