ALT6701 HELP4 UMTS2100 (Band 1) LTE, WCDMA, CDMA Multimode PAM TM DATA SHEET - Rev 2.4 FEATURES • CDMA/EVDO, WCDMA/HSPA and LTE Compliant • 4th Generation HELPTM technology ALT6701 • High Efficiency (R99 waveform): • 41 % @ POUT = +28.4 dBm • 31 % @ POUT = +17 dBm • 21 % @ POUT = +13.5 dBm • 26 % @ POUT = +9 dBm • 13 % @ POUT = +3.5 dBm • Low Quiescent Current: 2 mA • Low Leakage Current in Shutdown Mode: <5 µA M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Internal Voltage Regulator • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT port. • Internal DC blocks on IN/OUT RF ports talk and standby time. A “daisy chainable” directional coupler is integrated in the module, thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • Optimized for a 50 Ω System • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Band 1 WCDMA/HSPA Wireless Devices GNDatSlug(pad) • Band 1 LTE Wireless Devices • Band Class 6 CDMA/EVDO Wireless Devices VBATT 11 RFIN 22 VMODE2 33 VMODE1 VEN 10 10 VCC PRODUCT DESCRIPTION The ALT6701 HELP4TM PA is a 4th generation HELPTM product for LTE and WCDMA devices operating in UMTS2100 (Band 1) and for CDMA devices operating in Band Class 6. This PA incorporates ANADIGICS’ HELP4TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown mode with low leakage current increase handset 08/2011 9 RFOUT 88 CPLIN 44 77 GND 55 6 CPL BiasControl VoltageRegulation Figure 1: Block Diagram CPLOUT ALT6701 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT BatteryVoltage 2 RFIN RFInput 3 VMODE2 ModeControlVoltage2 4 VMODE1 ModeControlVoltage1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN CouplerInput 9 RFOUT RFOutput 10 VCC PAEnableVoltage CouplerOutput SupplyVoltage Data Sheet - Rev 2.4 08/2011 VCC ALT6701 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT SupplyVoltage(VCC) 0 +5 V BatteryVoltage(VBATT) 0 +6 V ControlVoltages(VMODE1,VMODE2,VEN) 0 +3.5 V RFInputPower(PIN) - +10 dBm -40 +150 °C StorageTemperature(TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT OperatingFrequency(f) 1920 - 1980 MHz SupplyVoltage(VCC) +3.1 +3.4 +4.35 V POUT < +28.4 dBm EnableVoltage(VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA "on" PA"shutdown" ModeControlVoltage(VMODE1,VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V LowBiasMode HighBiasMode WCDMA/UMTSOutputPower R99,HPM HSPA (MPR=0), HPM LTE(2) R99,MPM LTE & HSPA (MPR=0), MPM(2) R99,LPM LTE & HSPA (MPR=0), LPM(2) 27.6(1) 26.6(1) 26.2(1) 8.2(1) 7.2(1) 28.4 27.4 27.0 17.0 16.0 9.0 8.0 - CDMAOutputPower IS-95,HPM IS-95,MPM IS-95,LPM 26.9(1) 7.2(1) 27.7 16.0 8.0 - -30 - +90 CaseTemperature(TC) dBm COMMENTS 3GPPTS34.121-1,Rel8 TableC.11.1.3forWCDMA SUBTEST 1 TS36.101Rel8forLTE dBm CDMA 2000, RC-1 °C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For Operation at 3.1 V, POUT is Derated by 0.8 dB. (2) LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK. Data Sheet - Rev 2.4 08/2011 3 ALT6701 Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 24.5 16 7.5 27 19 10 29 22 12.5 ACLR E-UTRA at +10MHzoffset - -39 -40 -40 ACLR UTRA at +7.5MHzoffset - ACLR UTRA at +12.5MHzoffset POUT VMODE1 VMODE2 dB POUT = +27 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V -34 -34 -34 dBc POUT = +27 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V -40 -40 -41 -36.5 -36.5 -36.5 dBc POUT = +27 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V - -59 -59 <-60 -40 -40 -40 dBc POUT = +27 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V Power-AddedEfficiency 31 24 18 35 28 23 - % POUT = +27dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 0V QuiescentCurrent(Icq) LowBiasMode - 2 3.2 mA throughVCC pin 1.8V 1.8V ModeControlCurrent - 0.08 0.15 mA throughVMODEpins,VMODE1,2=1.8V EnableCurrent - 0.04 0.1 mA throughVENpin,VEN=1.8V BATTCurrent - 0.8 1.5 mA throughVbattPin,VMODE1,2=1.8V LeakageCurrent - <5 10 A VBATT=VCC=+4.35V VEN=0V,VMODE1,2=0V NoisePower - -136 -138 -144 -134 - Harmonics 2fo 3fo,4fo - -43 -46 -35 -38 dBc CouplingFactor - 20 - dB Directivitiy - 20 - dB DaisyChainInsertionLoss - <0.25 - dB SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure 2110MHzto2170MHz dBm/Hz GPSBand ISM Band - - <-70 dBc 8:1 - - VSWR Notes: (1) ACLR and Efficiency measured at 1950 MHz. 4 COMMENTS Data Sheet - Rev 2.4 08/2011 POUT +27 dBm POUT +27 dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperatingconditions Appliesoverfulloperatingrange ALT6701 Table 5: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 24.5 16 7.5 27 19 10 29 22 12.5 ACLR1at5MHzoffset(1) - -41 -41 -41 ACLR2at10MHzoffset - Power-AddedEfficiency(1) SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure COMMENTS POUT VMODE1 VMODE2 dB POUT = +28.4 dBm POUT = +17 dBm POUT=+9dBm 0V 1.8V 1.8V 0V 0V 1.8V -37.5 -37.5 -37.5 dBc POUT = +28.4 dBm POUT = +17 dBm POUT=+9dBm 0V 1.8V 1.8V 0V 0V 1.8V -53 -56 -60 -48 -48 -48 dBc POUT = +28.4 dBm POUT = +17 dBm POUT=+9dBm 0V 1.8V 1.8V 0V 0V 1.8V 37 27 20 - 41 31 21 26 13 - POUT = +28.4 dBm POUT = +17 dBm POUT=+13.5dBm POUT=+9dBm POUT=+3.5dBm 0V 1.8V 1.8V 1.8V 1.8V 0V 0V 0V 1.8V 1.8V - - -70 dBc 8:1 - - VSWR % Data Sheet - Rev 2.4 08/2011 POUT < +28.4 dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperatingconditions Appliesoverfulloperatingrange 5 ALT6701 Table 6: Electrical Specifications - CDMA Operation (CDMA 2000, RC-1) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 24.5 16 7.5 27 19 10 29 22 13 AdjacentChannelPower at +1.25MHzoffset PrimaryChannelBW-1.23MHz AdjacentChannelBW=30kHz - -50 -54 -56 AdjacentChannelPower at+1.98MHz PrimaryChannelBW=1.23MHz AdjacentChannelBW=30kHz 34 25 18 Power-AddedEfficiency(1) SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure 6 COMMENTS POUT VMODE1 VMODE2 dB POUT = +27.7 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V -46.5 -46.5 -46.5 dBc POUT = +27.7 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V -56 <-60 <-60 -53 -53 -53 dBc POUT = +27.7 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V 38 29 22 - % POUT = +27.7 dBm POUT=+16dBm POUT = +8 dBm 0V 1.8V 1.8V 0V 0V 1.8V - - -70 dBc 8:1 - - VSWR Data Sheet - Rev 2.4 08/2011 POUT<+27.7dBm In-BandVSWR<5:1 Out-Of-BandVSWR<10:1 Appliestoalloperatingconditions Appliesoverfulloperatingrange ALT6701 PERFORMANCE DATA PLOTS: (LTE Operation at 1950 MHz and 50 V system) Figure Figure4:WCDMAGain(dB)overTemperature 4: WCDMA Gain (dB) over Temperature (Vbatt=VCC=3.4V) (VBATT = VCC = 3.4 V) Figure 5: LTE Gain (dB) over Voltage Figure5:LTEGain(dB)overVoltage (T(Tc=25C C = 25) 8C) 35 30 -30C3.4Vcc 30 25C3.2Vcc 25C3.4Vcc 25C3.4Vcc 25 90C3.4Vcc 25C4.2Vcc 25 Gain(dB) 20 Gain(dB) 20 15 15 10 10 5 5 0 0 5 10 15 20 25 0 30 0 Pout (dBm) 45 Figure LTEPAE PAE (%) over Temperature Figure 6: 6:LTE (%) over Temperature (Vbatt=VCC=3.4V) (TC = 25 8C) 10 15 Pout (dBm) 20 25 30 FigureFigure 7: LTE PAE over Voltage 7: LTE PAE(%) (%) over Voltage (TC (Tc=25C) = 25 8C) 45 -303.4cc 40 25C3.4Vcc 40 25C3.2Vcc 35 90C3.4Vcc 35 25C4.2Vcc 25C3.4Vcc 30 Efficiency 30 Efficiency (%) 5 25 25 20 20 15 15 10 10 5 5 0 0 0 5 10 15 20 25 30 0 Pout (dBm) Figure 8:Figure8:LTEACRL1(dBc)overTemperature LTE ACLR1 (dBc) over Temperature (VBATT(Vbatt=VCC=3.4V) = VCC = 3.4 V) -20 -20 25C3.4Vcc ACLR1(5MHzdBc) ACLR1(5MHzdBc) -40 -45 -50 20 25 30 25C3.4Vcc 25C4.2Vcc 90C3.4Vcc -35 15 Pout (dBm) 25C3.2Vcc -25 -30 10 FigureFigure9:LTEACLR1(dBc)overVoltage 9: LTE ACLR1 (dBc) over Voltage (T(Tc=25C) C = 25 8C) -30C3.4Vcc -25 5 -30 -35 -40 -45 -50 -55 0 5 10 15 Pout (dBm) 20 25 30 -55 0 5 10 15 20 25 30 Pout (dBm) Data Sheet - Rev 2.4 08/2011 7 ALT6701 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE pins. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At ~17dBm - 6 dBm, the PA could be switched to Medium Power Mode. For POUT levels < ~8 dBm, the PA could be switched to Low Power Mode for extremely low current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 7: Bias Control POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 vcc VBATT Lowpower (LowBiasMode) < + 8 dBM Low +1.8V +1.8V +1.8V 3.1-4.35V >3.1V Medpower (MediumBiasMode) >6dBm < 17 dBm Low +1.8V +1.8V 0V 3.1-4.35V >3.1V >+16dBm High +1.8V 0V 0V 3.1-4.35V >3.1V - Shutdown 0V 0V 0V 3.1-4.35V >3.1V APPLICATION Highpower (HighBiasMode) Shutdown VBATT VCC C5 2.2µF C1 0.1µF GNDatslug 1 2 RFIN VMODE2 VMODE1 VEN VBATT VCC RFIN RFOUT 10 C3 33pF 9 3 VMODE2 CPLIN 8 4 VMODE1 GND 7 5 VEN RFOUT CPLOUT 6 Data Sheet - Rev 2.4 08/2011 C4 2.2µFceramic CPLIN Figure 10: Evaluation Board Schematic 8 C2 0.1µF CPLOUT ALT6701 PACKAGE OUTLINE Figure 11: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code (YYWW) 6701R LLLLNN YYWWCC Part Number Lot Number Country Code(CC) Figure 12: Branding Specification - M45 Package Data Sheet - Rev 2.4 08/2011 9 ALT6701 COMPONENT PACKAGING Pin 1 Figure 13: Tape & Reel Packaging Table 8: Tape & Reel Dimensions 10 PACKAGETYPE TAPEWIDTH POCKETPITCH REEL CAPACITY MAX REEL DIA 3mmx3mmx1mm 12 mm 4 mm 2500 7" Data Sheet - Rev 2.4 08/2011 ALT6701 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION ALT6701RM45Q7 -30oCto+90oC RoHS Compliant 10 Pin 3mmx3mmx1mm TapeandReel,2500piecesperReel SurfaceMountModule ALT6701RM45P9 -30oCto+90oC RoHS Compliant 10 Pin 3mmx3mmx1mm PartialTapeandReel SurfaceMountModule COMPONENTPACKAGING ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. Data Sheet - Rev 2.2 06/2011