AWT6635 HELP3DCTM (Band 5) LTE/WCDMA/CDMA Linear PA Module PRELIMINARY DATASHEET - Rev 1.3 FEATURES • CDMA/EVDO, WCDMA/HSPA and LTE compliant •3rd Generation HELPTM technology • High Efficiency: (R99 waveform) • 40 % @ POUT = +28.5 dBm • 21.5 % @ POUT = +17 dBm AWT6635 • Simpler Calibration with only 2 Bias modes • Optimized for SMPS Supply • Low Quiescent Current: 9 mA • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional couplers with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System • Low Profile Miniature Surface Mount Package • Internal DC blocks on IN/OUT RF ports ruggedness. There are two selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Wireless Handsets and Data Devices for: • WCDMA/HSPA and LTE Cell-Band GND at Slug (pad) • CDMA/EVDO Band Class 0 & 10 VBATT 1 RFIN 2 VMODE2 (N/C) 3 VMODE1 VEN PRODUCT DESCRIPTION The AWT6635 PA is designed to provide highly linear output for WCDMA ,CDMA and LTE handsets and data devices with high efficiency at both high and low power modes. This HELP3DCTM PA can be used with an external switch mode power supply (SMPS) to improve its efficiency and reduce current consumption further at medium and low output powers. A “daisy chainable” directional coupler is integrated in the module thus eliminating the need of external couplers. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and 02/2012 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram AWT6635 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 (N/C) 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input VMODE2 (N/C) No Connection 3 2 Mode Control Voltage 1 4 VMODE1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC PA Enable Voltage Coupler Output Supply Voltage PRELIMINARY DATASHEET - Rev 1.3 02/2012 VCC AWT6635 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VENABLE) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 814 - 849 MHz Supply Voltage (VCC) +0.5 +3.4 +4.35 V POUT ≤ +28.5 dBm Battery Voltage (VBATT) +3.1 +3.4 +4.35 V POUT ≤+28.5 dBm Enable Voltage (VENABLE) +1.35 0 +1.8 0 +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE1) +1.35 0 +1.8 0 +3.1 +0.5 V Low Bias Mode High Bias Mode RF Output Power (POUT) R99 WCDMA, HPM HSPA (MPR=0), HPM LTE, HPM R99 WCDMA, LPM HSPA (MPR=0), LPM LTE, LPM 27.7(1) 26.7(1) 26.7(1) 16.2(1) 15.2(1) 15.2(1) 28.5 27.5 27.5 17 16 16 28.5 27.5 27.5 17 16 16 dBm CDMA Output Power HPM LPM 26.7(1) 15.2(1) 27.5 16.0 27.5 16.0 dBm -30 - +90 °C Case Temperature (TC) COMMENTS 3GPP TS 34.121-1, Rel 8 Table C.11.1.3 for WCDMA SUBTEST 1 TS 36.101 Rel 8 for LTE CDMA2000, RC1 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB. 3 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 Table 4: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25.5 13 28.5 16 31 18 dB - -41 -41 -38 -38 - -56 -56 -48 -48 - 40 21.5 Quiescent Current (Icq) Low Bias Mode - Mode Control Current COMMENTS POUT VMODE1 +28.5 dBm +17 dBm 0V 1.8 V +28.5 dBm +17 dBm 0V 1.8 V dBc +28.5 dBm +17 dBm 0V 1.8 V - % +28.5 dBm +17 dBm 0V 1.8 V 9 11 mA VMODE1 = +1.8 V - 0.06 0.15 mA through VMODE pin, VMODE1 = +1.8 V Enable Current - 0.4 0.6 mA through VENABLE pin BATT Current - 3.0 5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 - µA VBATT = +4.2 V, VCC = +4.2 V, VENABLE = 0 V, VMODE1 = 0 V - -133 -131 dBm/Hz POUT < +28.5 dBm, VMODE1 = 0V - -137 -135 dBm/Hz POUT < 17 dBm, VMODE1 = +1.8 V Harmonics 2fo 3fo, 4fo - -40 -60 -35 -45 dBc Input Impedance - - 2:1 VSWR Coupling Factor - 20 - dB Directivity - 20 - dB Coupler In-Out Daisy Chain Insertion Loss - <0.25 - dB 698 MHz to 2620 MHz Pin 8 to 6 Shutdown Mode Spurious Output Level (all spurious outputs) - - -70 dBc P OUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR - 10 - Deg ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset (1) Power-Added Efficiency (1) Noise in Receive Band(2) Load mismatch stress with no permanent degradation or failure Phase Delta (HPM-LPM) dBc POUT < +28.5 dBm Applies over full operating range Notes: (1) ACLR and Efficiency measured at 836.5 MHz. (2) 869 MHz to 894 MHz. 4 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25.5 13 28.5 16 31 18 ACLR E-UTRA at 10MHz offset - -39 -38 ACLR1UTRA (1) at 7.5 MHz offset - ACLR2 UTRA at 12.5 MHz offset Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatchstresswith no permanent degradation or failure COMMENTS POUT VMODE1 dB +27.5 dBm +16dBm 0V 1.8 V - dBc +27.5 dBm +16dBm 0V 1.8 V -40 -39 - dBc +27.5 dBm +16dBm 0V 1.8 V - -60 -60 - dBc +27.5 dBm +16dBm 0V 1.8 V - 36 19 - % +27.5dBm +16dBm 0V 1.8 V - - <-70 8:1 - - dBc POUT +27.5 dBm In-band load VSWR<5:1 Out-of-band load VSWR<10:1 Appliesover all operating conditions VSWR Appliesover full operating range Notes: (1) ACLR and Efficiency measured at 836.5 MHz. 5 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 Table 6: Electrical Specifications - CDMA2000 Operation (RC-1 waveform) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25.5 13 28.5 16 31 18 Adjacent Channel Power at 885 kHz offset (1) Primary Channel BW =1.23 MHZ Adjacent Channel BW = 30kHz - -51 -50 Adjacent Channel Power at 1.98MHz offset (1) Primary Channel BW =1.23 MHZ Adjacent Channel BW = 30kHz - Power-Added Efficiency (1) - Spurious Output Level (all spurious outputs) Load mismatchstresswith no permanent degradation or failure 6 COMMENTS POUT VMODE1 dB POUT = +27.5 dBm POUT = +16 dBm 0V 1.8 V - dBc POUT = +27.5 dBm POUT = +16dBm 0V 1.8 V -61 -59 - dBc POUT = +27.5 dBm POUT = +16dBm 0V 1.8 V 36 19 - % POUT = +27.5 dBm POUT = +16 dBm 0V 1.8 V - - -70 dBc POUT< +27.5 dBm In-band Load VSWR<5:1 Out-of-band Load VSWR<10:1 Appliesover all operating conditions 8:1 - - VSWR Appliesover all operating conditions PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 PERFORMANCE DATA PLOTS: (WCDMA Operation at 836.5 MHz and 50 V system) Figure 4: WCDMA Gain(dB) (dB) over Figure 3: WCDMA Gain overTemperature Temperature (VBATT(Vbatt=Vcc=3.4V) = VCC = 3.4 V) 35 Figure 4: WCDMA Gain (dB) Temperature Figure 5: WCDMA Gain (dB)over over Voltage (Tc=25C (VBATT = VCC =) 3.4 V) 30 25C 3.2Vcc -30C 3.4Vcc 25C 3.4Vcc 25C 3.4Vcc 25C 4.2Vcc 90C 3.4Vcc 25C 3.0Vcc 25 Gain (dB) Gain (dB) 30 25 20 20 15 0 5 10 15 20 25 15 30 0 5 Pout (dBm) 25 30 50 25C 3.2Vcc 45 25C 3.4Vcc 25C 3.4Vcc 40 90C 3.4Vcc 25C 4.2Vcc 35 Efficiency Efficiency (%) 20 7: WCDMA overTemperature Voltage Figure 6:Figure WCDMA PAEPAE (%)(%) over (Tc=25C) (VBATT = VCC = 3.4 V) -30 3.4cc 40 15 Pout (dBm) FigureFigure 5: WCDMA over Temperature 6: WCDMAPAE PAE (%) (%) over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 50 10 30 20 25C 3.0Vcc 30 25 20 15 10 10 5 0 0 0 5 10 15 20 25 0 30 5 10 15 20 25 30 Pout (dBm) Pout (dBm) Figure 8: WCDMA ACRL1 (dBc) over Temperature Figure 7: WCDMA ACLR1 (dBc) over Temperature Figure 8:Figure WCDMA ACLR1 over Temperature 9: WCDMA ACLR1(dBc) (dBc) over Voltage (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) (VBATT (Tc=25C) = VCC = 3.4 V) -25 25C 3.4Vcc -30 90C 3.4Vcc -35 -40 -45 -50 25C 3.4Vcc 25C 4.2Vcc -35 25C 3.0Vcc -40 -45 -50 -55 -55 0 5 10 15 20 25 30 Pout (dBm) 7 25C 3.2Vcc -30 ACLR1 (5MHz dBc) ACLR1 (5MHz dBc) -25 -30C 3.4Vcc -60 0 5 10 15 Pout (dBm) PRELIMINARY DATASHEET - Rev 1.3 02/2012 20 25 30 AWT6635 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENABLE and VMODE1 voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to VMODE1. The Bias Control table lists the recommended modes of operation for various applications. VMODE2 is not necessary for this PA. Two operating modes are available to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At around 17 dBm output power, the PA can be “Mode Switched” to Low power mode for lowest quiescent current consumption. Vcontrols Venable/Vmode(s) On Sequence Start T_0N = 0µ Rise/Fall Max 1µS Defined at 10% to 90% of Min/Max Voltage Off Sequence Start T_0FF = 0µ ON Sequence OFF Sequence RFIN notes 1,2 VEN VCC note 1 T_0N+1µS T_0N+3µS T_0FF+2µS T_0FF+3µS Referenced After 90% of Rise Time Referenced Before10% of Fall Time Figure 9: Recommended ON/OFF Timing Sequence Notes: (1) Level might be changed after RF is ON. (2) RF OFF defined as PIN ≤ -30 dBm. (3) Switching simultaneously between VMODE and VEN is not recommended. Table 7: Bias Control POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT High power (High Bias Mode) > +16 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V Med/low power (Low Bias Mode) +17 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1 V - Shutdown 0V 0V 0.5 - 4.35 V > 3.1 V APPLICATION Shutdown 8 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 VBATT VCC C5 2.2 µF C1 33pF C2 0.1µF GND at slug 1 2 RFIN VMODE1 VEN VBATT VCC RFIN RFOUT 3 VMODE2 (N/C) CPLIN 4 VMODE1 5 VEN 10 9 RFOUT 8 CPLIN GND 7 CPLOUT 6 CPLOUT C4 0.01 µF VCC GND GND VBATT Figure 10: Evaluation Circuit Schematic C6 RFIN C1 RFOUT C3 C2 CPLOUT VMODE1 VEN GND GND VMODE2 C4 CPLIN Figure 11: Evaluation Board Layout 9 C3 2.2µF ceramic PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 HELP3DCTM The AWT6635 power amplifier module is based on ANADIGICS proprietary HELP3DC™ technology. The PA is designed to operate up to 17 dBm in the low power mode, thus eliminating the need for three gain state, while still maintaining low quiescent current and high efficiency in low and medium power levels. Average weighted efficiency can be increased by using an external switch mode power supply (SMPS) or DC/DC converter to reduce VCC. The directional “daisy chainable” coupler is integrated within the PA module, therefore there is no need for external couplers. The AWT6635 has an integrated voltage regulator, which eliminates the need for an external constant voltage source. The PA is turn on/off is controlled by VEN pin. A single VMODE control logic (VMODE1) is needed to operate this device. AWT6635 requires only two calibration sweeps for system calibration, thus saving calibration time. Figure 11 shows one application example on mobile board. C1 and C2 are RF bypass caps and should be placed nearby pin 1 and pin 10. Bypass caps C4 and C5 may not be needed. Also a “T” matching topology is recommended at PA RFIN and RFOUT ports to provide matching between input TX Filter and Duplexer / Isolator. SMPS VBATT C6 GND RFIN C1 C2 GND at slug GND TX filter Input Matching VBATT VCC RFIN RFOUT VMODE2 CPL IN VMODE1 C5 VEN GND GND RFOUT 50Ω CPLOUT GND To Detector PA_R0 PA_0N C4 GND Figure 12: Typical Application Circuit 10 PRELIMINARY DATASHEET - Rev 1.3 02/2012 GND Duplexer GND BB C3 Output Matching AWT6635 PACKAGE OUTLINE Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY= Year WW= Work Week 6635 LLLLNN Part Number YYWWCC Country Code (CC) Lot Number Figure 14: Branding Specification Package 11 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 PCB AND STENCIL DESIGN GUIDELINE Figure 15: Recommended PCB Layout Information 12 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 COMPONENT PACKAGING Pin 1 Figure 16: Carrier Tape Figure 17: Reel 13 PRELIMINARY DATASHEET - Rev 1.3 02/2012 AWT6635 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE AWT6635Q7 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module AWT6635P9 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module PACKAGE DESCRIPTION COMPONENT PACKAGING ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 14 PRELIMINARY DATASHEET - Rev 1.3 02/2012