Eon Silicon Solution Inc. Application Note EON EN25Q80A vs Winbond W25Q80BV Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from Winbond W25Q80BV Flash to Eon EN25Q80A Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table highlights the major features of these two devices. Features Voltage Range Pin to Pin Compatible (Quad mode) SPI frequency (standard / dual / quad mode) Secured Silicon Sector Region EN25Q80A 2.7 ~ 3.6 8-pins SOP 150mil / 208mil 8 contact VDFN (5x6mm) 8-pin DIP W25Q80BV 2.7 ~ 3.6 8-pin SOP 150mil / 208mil 8-Pad WSON (5x6mm) 8-Pin DIP 100MHz / 80MHz / 80MHz 100MHz / 80MHz / 80MHz 256 Byte 64 Bit (8 Byte) Unique Serial Number 4 x 256 Byte Security Register Sector Architecture Uniform 256 Sectors of 4 K byte 16 blocks of 64 K byte SPI mode Mode 0 / Mode 3 Uniform 256 sectors of 4 K byte 16 blocks of 64 K byte 32 blocks of 32 K byte Mode 0 / Mode 3 Minimum Endurance Cycle 100K 100K Package 8-pins SOP 150mil / 208mil 8 contact VDFN (5x6mm) 8-pin DIP 8-pin SOP 150mil / 208mil 8-Pad WSON (5x6mm) 8-Pin DIP This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison EN25Q80A W25Q80BV Read ICC3 Max 25 Max 18 Page Program (PP) ICC4 28 25 mA Sector Erase (SE) ICC6 25 25 mA Standby ICC1 20 50 μA Current Unit mA 3.2 Pin Configuration Pin number Pin1 Pin2 Pin3 Pin4 Pin5 Pin6 Pin7 Pin8 EN25Q80A CS# DO (DQ1) WP# (DQ2) VSS DI (DQ0) CLK NC (DQ3) VCC W25Q80BV CS# DO (IO1) WP# (IO2) VSS DI (IO0) CLK HOLD# (IO3) VCC Note: For the pin Configuration of 8 pin SOP and VDFN (5x6mm) package, Eon EN25Q80A Flash is the same as Winbond W25Q80BV Flash when using Quad Mode function only. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) comparison. For EN25Q80A OP Code (M7-M0) (ID15-ID0) ABh (ID7-ID0) 13h 90h 1Ch 9Fh 1Ch 13h 3014h For W25Q80BV This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 4.2. Instruction Set Comparison 4.2.1 Enable Quad I/O (EQIO) command (38h) EN25Q80A： Support. W25Q80BV：No support. 4.2.2 Reset Quad I/O (RSTQIO) command (FFh) EN25Q80A： Support. W25Q80BV：No support. 4.2.3 Write Enable for Volatile Status Register command EN25Q80A：No support. W25Q80BV：Support. 4.2.4 Different Read Status Register command EN25Q80A：Only support 05h command. (for register bit 7~ bit0) W25Q80BV：Support 05h (for register bit 7~ bit 0) and 35h. (for register bit 8 ~ bit 15) 4.2.5 Different Read Status Register length EN25Q80A：8 bit. (bit7 ~ bit 0) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. W25Q80BV：16 bit. (Bit 15 ~ bit0) 4.2.6 Quad page program command EN25Q80A：No support. W25Q80BV：Support. 4.2.7 Different block erase command EN25Q80A：Only support D8h command. (for 64K byte) W25Q80BV：Support 52h (for 32K byte) and D8h commands. (for 64K Byte) 4.2.8 Erase / Program suspend commands EN25Q80A：No support. W25Q80BV：Support. 4.2.9 Erase / Program resume commands EN25Q80A：No support. W25Q80BV：Support. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 4.2.10 Continue read mode reset commands (for Dual / Quad operation) EN25Q80A：No support. W25Q80BV：Support. 4.2.11 Fast read quad output command EN25Q80A：No support. W25Q80BV：Support. 4.2.12 Word read for quad I/O command EN25Q80A：No support. W25Q80BV：Support. 4.2.13 Octal word read for quad I/O command EN25Q80A：No support. W25Q80BV：Support. 4.2.14 Set Burst with wrap EN25Q80A：No support. W25Q80BV：Support. 4.2.15 Manufacture/Device ID by Dual/Quad I/O command EN25Q80A：No support. W25Q80BV：Support. 4.2.16 Read Unique ID command EN25Q80A：No support. W25Q80BV：Support. 4.2.17 Erase/Program/Read Security Registers command EN25Q80A：No support. W25Q80BV：Support. 4.2.18 Enter OTP mode command (3Ah) EN25Q80A： Support. W25Q80BV：No support. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 4.2.19 Different block protect definition EN25Q80A : W25Q80BV : This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN25Q80A Parameter W25Q80BV Unit Typ Max Typ Max 4 KB Sector Erase Time 0.09 0.3 0.03 0.2 sec 64KB Block Erase Time 0.5 2 0.15 1 sec Chip (Bulk) Erase Time 8 20 2 6 sec 1.3 5 0.7 3 ms Page Programming Time 5.2 KEY AC PARAMETER PERFORMANCE EN25Q80A W25Q80BV tCH (serial clock high time) Min @ 4ns Min @ 4ns tCL (serial clock low time) Min @ 4ns Min @ 4ns tCLCH(serial clock rise time) Min @ 0.1V / ns Min @ 0.1V / ns tCHCL(serial clock fall time) Min @ 0.1V / ns Min @ 0.1V / ns tSLCH(CS# active setup time) Min@ 5ns Min @ 5ns tCHSH(CS# active hold time) Min@ 5ns Min @ 5ns Min @ 15ns for Read Min @ 10ns for Read Min @ 50ns for Write Min @ 50ns for Write tDSU(Data in setup time) Min @ 2ns Min @ 2ns tDH(Data in hold time) Min @ 5ns Min @ 5ns Parameter tSHSL(CS# high time) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 10 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/12/15 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/12/15 www.eonssi.com