Eon Silicon Solution Inc. Application Note EON EN25Q32B (Version : Preliminary 0.2) vs MXIC MX25L3235D (Version : 1.4) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from MXIC MX25L3235D Flash to Eon EN25Q32B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table highlights the major features of these two devices. Features Voltage range Pin to pin compatible (standard SPI mode) SPI mode SPI frequency (standard mode) Sector architecture Lockable OTP security sector Minimum endurance cycle Package EN25Q32B 2.7 ~ 3.6V 8 pins SOP 200mil 8 contact VDFN (5 x 6mm) 16 pins SOP 300mil Mode 0 / Mode 3 104MHz (standard mode) 80MHz @ dual & quad mode Uniform 1024 sectors of 4K byte 64 blocks of 64K byte MX25L3235D 2.7 ~ 3.6V 8-pin SOP 209mil 8-land WSON (6 x 5mm) 16-pin SOP 300mi Mode 0 / Mode 3 104MHz (standard mode) 75MHz @ dual & quad mode Uniform 1024 sectors of 4K byte 64 blocks of 64K byte 512 Byte 512 Byte 100K 100K 8 pins SOP 200mil 8 contact VDFN (5 x 6mm) 16 pins SOP 300mil 24 balls BGA (6 x 8mm) 8-pin SOP 209mil 8-land WSON (6 x 5mm, 8 x 6mm) 16-pin SOP 300mil This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison Current Read ICC3 EN25Q32B MX25L3235D Max ( @ Single 104MHz) Max ( @Single 104MHz ) 25 25 Unit mA Page Program (PP) ICC4 28 20 mA Sector Erase (SE) ICC6 25 20 mA Standby ICC1 20 20 A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) comparison. For EN25Q32B For MX25L3235D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4.2. Instruction set comparison EN25Q32B MX25L3235D does not support RSTEN, RST, Dual Output Fast Read instructions, and the Enter OTP mode instruction for EN25Q32B is 3Ah while the instruction for MX25L3235D is B1h. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. MX25L3235D EN25Q32B does not support Continuously program mode, REMS2, REMS4, EXSO RDSCUR, WRSCUR, ESRY, DSRY instructions. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4.3 Different block protection area The definition of block protection area is different. EN25Q32B MX25L3235D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 4.4 Different RDSR bit definition The definition of RDSR bit S6 and bit6 are different. EN25Q32B MX25L3235D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 10 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN25Q32B Parameter MX25L3235D Unit Typ Max Typ Max Page programming time 0.8 5 1.4 5 ms Sector erase time 0.05 0.3 0.06 0.3 sec Block erase time 0.2 2 0.7 2 sec Chip (Bulk) erase time 15 25 25 50 sec 5.2 KEY AC PARAMETER PERFORMANCE EN25Q32B MX25L3235D tCH (serial clock high time) Min @ 4ns Min @ 4.7ns tCL (serial clock low time) Min @ 4ns Min @ 4.7ns tCLCH(serial clock rise time) Min @ 0.1V / ns Min @ 0.1V / ns tCLCL(serial clock fall time) Min @ 0.1V / ns Min @ 0.1V / ns Min@ 5ns Min @ 5ns Min @ 50ns Min @ 5ns tDSU(Data in setup time) Min @ 2ns Min @ 2ns tDH(Data in hold time) Min @ 5ns Min @ 5ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/07/01 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 12 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 07/01 www.eonssi.com