Eon Silicon Solution Inc. Application Note EON EN25Q16 vs Numonyx M25P16 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from Numonyx M25P16 Flash to Eon EN25Q16 Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table highlights the major features of these two devices. Features Voltage Range Pin to Pin Compatible (standard mode) SPI frequency (standard / dual / quad / mode) Secured Silicon Sector Region Sector Architecture SPI mode EN25Q16 2.7 ~ 3.6 M25P16 2.7 ~ 3.6 Except pin 7: NC Except pin 7: HOLD# 100MHz (standard mode) 80MHz @ dual & quad mode 75MHz @ standard mode 128 Byte N/A Uniform 512 Sectors of 4 K byte 32 Blocks of 64 K byte Mode 0 / Mode 3 Uniform 32 Blocks of 64 K byte Mode 0 / Mode 3 Minimum Endurance Cycle 100K 100K Package 8-pins SOP 150mil 8-pins SOP 200mil 8 contact VDFN 8-pins DIP 8-pins SO8N 150mil 8-pins SO8W 200mil 16-pins SO16 300mil 8 contact VFQFPN8 (6mmx5mm) 8 contact VDFPN8 (8mmx6mm) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison EN25Q16 M25P16 Max 12 @ 75MHz mA Page Program (PP) ICC4 Max 25 @ 100MHz 20 @ 80MHz 28 15 mA Sector Erase (SE) ICC6 25 15 mA Standby ICC1 20 100 A Current Read ICC3 Unit 3.2 Pin Configuration (8-pin package) Pin number Pin1 Pin2 Pin3 Pin4 Pin5 Pin6 Pin7 Pin8 EN25Q16 CS# DO (DQ1) WP# (DQ2) VSS DI (DQ0) CLK NC (DQ3) VCC M25P16 S# Q W# VSS D C HOLD# VCC Note: 1. If customers don’t use HOLD# pin function on M25P16, which can be replaced by EN25Q16 in standard SPI mode. 2. M25P16 can support general standard SPI mode. 3. EN25Q16 can support general standard / dual / quad SPI mode. (Need specific SPI controller) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) comparison. For EN25Q16 OP Code (M7-M0) (ID15-ID0) ABh (ID7-ID0) 14h 90h 1Ch 9Fh 1Ch 14h 3015h For M25P16 OP code: 9Fh This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. 4.2. Instruction Set Comparison 4.2.1 Different Block Protection Area EN25Q16 M25P16 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. 4.2.2 Different block erase command EN25Q16 Support D8h command for 64K byte and 20h command for 4k byte. M25P16 Only Support D8h commands for 64K Byte 4.2.3 Dual Output FAST_READ (3Bh) commands EN25Q16 Support. M25P16 No support. 4.2.4 Dual Input / Output FAST_READ (BBh) commands EN25Q16 Support. M25P16 No support. 4.2.5 Quad Input / Output FAST_READ (EBh) commands EN25Q16 Support. M25P16 No support. 4.2.6 Enter OTP Mode (3Ah) commands EN25Q16 Support. OTP Sector Address M25P16 No support. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN25Q16 Parameter M25P16 Unit Typ Max Typ Max 4 KB Sector Erase Time 0.09 0.3 N/A N/A sec 64KB Block Erase Time 0.4 2 0.6 3 sec Chip (Bulk) Erase Time 12 35 13 40 sec Page Programming Time 1.3 5 0.64 5 ms 5.2 KEY AC PARAMETER PERFORMANCE EN25Q16 M25P16 tCH (serial clock high time) Min @ 4ns Min @ 18ns tCL (serial clock low time) Min @ 4ns Min @ 18ns tCLCH(serial clock rise time) Min @ 0.1V / ns Min @ 0.1V / ns tCLCL(serial clock fall time) Min @ 0.1V / ns Min @ 0.1V / ns Min@ 5ns Min @ 10ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) Min @ 15ns for Read Min @ 50ns for Write Min @ 100ns tDSU(Data in setup time) Min @ 2ns Min @ 5ns tDH(Data in hold time) Min @ 5ns Min @ 5ns This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/02/25 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25 www.eonssi.com