Eon Silicon Solution Inc. Migration Note EON Flash EN29LV040A-C3H to EN29LV400AB-C3H This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from EON EN29LV040A-C3H Flash to Eon EN29LV400AB-C3H Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table is the major features of these two devices. Features voltage range Low Vcc write inhibit Sector protect / unprotect mode Access speed Erase suspend / resume mode JEDEC & data polling# / toggle bit feature EN29LV040A-C3H 2.7 ~ 3.6 EN29LV400AB-C3H 2.7 ~ 3.6 <= 2.5V <= 2.5V yes yes 45ns 45ns yes yes yes yes 100K 100K Minimum endurance cycle 2.2 The following table is different comparison Difference Sector type Die size Pad count Pad size EN29LV040A-C3H Uniform 8 x 64K byte sectors 2611um x 1868um 33 63.25um x 63.25um EN29LV400AB-C3H 1 x 16K byte / 2 x 8K byte / 1 x 32K byte / 7 x 64K byte 2611um x 2033um 46 68.75um x 68.75um Note: Due to that EN29LV040A-C3H & EN29LV400AB-C3H have different sector architectures, maintaining different firmware coding is necessary when EN29LV040A-C3H is replaced by EN29LV400AB-C3H. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 2.3 The following reference diagram is different EN29LV040A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. EN29LV400AB This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 2.4 The following reference coordinate is different EN29LV040A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. EN29LV400AB This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. PERFORMANCE DIFFERENCES 3.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN29LV400AB-C3H Parameter EN29LV040A-C3H Unit Typ Max Typ Max 0.5 10 0.5 10 Sec Byte Programming Time 8 300 8 300 us Word Programming Time 8 300 8 300 us Chip Erase Time 5 100 4 80 Sec 4.2 12.6 4.2 12.6 Sec 2.1 6.3 2.1 6.3 Sec Sector Erase Time Chip Programming (Byte) Time Chip Programming (Word) Time 3.2 LATCH UP CHARACTERISTIC (THESE CHIPS ARE THE SAME) 3.3 DATA RENTATION (THESE CHIPS ARE THE SAME) 3.4 OPERATION TEMPERATURE (THESE CHIPS ARE THE SAME) At -45 degree ~ 85 degree Celsius This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/6/08 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 Rev. A, Issue Date: 2009/ 06/08 ©2005 Eon Silicon Solution Inc. www.eonssi.com