2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V 10 ICBO VCB=90V, TA=150°C 10 IEBO VEB=5.0V 10 BVCBO IC=100μA 140 BVCEO IC=30mA 80 BVEBO IE=100μA 7.0 VCE(SAT) IC=150mA, IB=15mA 0.2 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(SAT) IC=150mA, IB=15mA 1.1 hFE VCE=10V, IC=100μA 50 90 hFE VCE=10V, IC=10mA hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=150mA, TA=-55°C 40 hFE VCE=10V, IC=500mA 50 hFE VCE=10V, IC=1.0A 15 fT VCE=10V, IC=50mA, f=20MHz 100 Cob VCB=10V, IE=0, f=1.0MHz 12 Cib VEB=0.5V, IC=0, f=1.0MHz 60 rb’Cc VCE=10V, IC=10mA, f=4.0MHz 400 NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ 4.0 UNITS V V V A W W °C 140 80 7.0 1.0 0.8 5.0 -65 to +200 2N3020 MIN MAX 10 10 10 140 80 7.0 0.2 0.5 1.1 30 100 40 120 40 120 30 100 15 100 12 60 400 - - UNITS nA μA nA V V V V V V MHz pF pF ps dB R1 (11-June 2012) 2N3019 2N3020 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (11-June 2012) w w w. c e n t r a l s e m i . c o m