2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO 140 UNITS V 140 V VEBO IC 5.0 V 1.0 A PD PD 1.0 W 5.0 W -65 to +200 °C Thermal Resistance TJ, Tstg ΘJA 175 °C/W Thermal Resistance ΘJC 35 °C/W MAX 100 UNITS nA 50 nA Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=100V IEBO VEB=3.0V BVCBO IC=100μA 140 BVCEO IC=10mA 140 V BVEBO IE=10μA 5.0 V VCE(SAT) VCE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.3 V 0.5 V VBE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.8 V 0.9 V VBE(SAT) fT fT Cob Cib NF ton toff VCE=30V, IC=30mA, f=100MHz (2N3634) VCE=30V, IC=30mA, f=100MHz (2N3635) VCB=20V, IE=0, f=1.0MHz VEB=1.0V, IC=0, f=1.0MHz VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz VCC=100V, VBE=4.0V, IC=50mA IB1=IB2=5.0mA 0.65 V 150 MHz 200 MHz 10 pF 75 pF 3.0 dB 400 ns 600 ns R1 (17-September 2013) 2N3634 2N3635 SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3634 2N3635 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, IC=0.1mA 40 80 hFE IC=1.0mA 45 - 90 50 - 100 - 50 150 100 300 hFE IC=10mA VCE=10V, IC=50mA VCE=10V, IC=150mA 25 - 50 - hfe VCE=10V, IC=10mA, f=1.0kHz 40 160 80 320 hFE hFE VCE=10V, VCE=10V, - TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (17-September 2013) w w w. c e n t r a l s e m i . c o m