PN5134 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN5134 is a small signal NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC 20 UNITS V 10 V 3.5 V 500 mA 625 mW PD TJ, Tstg -65 to +150 °C ΘJA 200 °C/W MAX 0.4 UNITS µA 10 µA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCB=15V ICBO VCB=15V, TA=65°C BVCES IC=10µA 20 V BVCBO IC=10µA 20 V BVCEO IC=10mA 10 V BVEBO IE=10µA 3.5 VCE(SAT) IC=10mA, IB=1.0mA IC=10mA, IB=3.3mA VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE Cob hfe V 0.25 V 0.20 V 0.9 V V IC=10mA, IB=1.0mA IC=10mA, IB=3.3mA 0.70 0.72 1.1 VCE=1.0V, IC=10mA VCE=0.4V, IC=30mA 20 150 VCB=5.0V, IE=0, f=1.0MHz VCE=10V, IC=10mA, f=100MHz 15 4.0 pF 2.5 R0 (6-April 2011) PN5134 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ton VCC=3.0V, IC=10mA, IB1=3.3mA 18 td VCC=3.0V, IC=10mA, IB1=3.3mA 14 tr toff ts tf VCC=3.0V, IC=10mA, VCC=3.0V, IC=10mA, VCC=3.0V, IC=10mA, UNITS ns ns IB1=3.3mA 12 ns IB1=IB2=3.3mA 18 ns IB1=IB2=3.3mA VCC=3.0V, IC=10mA, IB1=IB2=3.3mA 13 ns 13 ns TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (6-April 2011) w w w. c e n t r a l s e m i . c o m