2N5582 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5582 is a silicon NPN transistor designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-46 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO SYMBOL VCBO VCEO VEBO IC 75 UNITS V 40 V 6.0 V 800 mA 600 mW PD TJ, Tstg -65 to +200 °C ΘJA 292 °C/W MAX 10 UNITS nA CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=60V ICEV VCB=60V, TA=150°C VCE=60V, VBE=3.0V IEBO VEB=3.0V BVCBO IC=10μA 75 BVCEO IC=10mA 40 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE hFE μA 10 nA 10 nA V 0.3 IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 VCE=10V, IC=100μA VCE=10V, IC=1.0mA VCE=10V, IC=10mA 35 VCE=10V, IC=10mA, TA=-55°C VCE=10V, IC=150mA 35 VCE=1.0V, IC=150mA VCE=10V, IC=500mA 10 V 1.0 V 1.2 V 2.0 V 50 75 100 300 50 40 R1 (2-December 2013) 2N5582 SILICON NPN TRANSISTOR ELECTRICAL SYMBOL fT Cob CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCE=20V, IC=20mA, f=100MHz 300 UNITS MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz 8.0 pF 25 pF 10 ns 25 ns ts VCC=30V, VBE(off)=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE(off)=0.5V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns Cib td tr TO-46 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-December 2013) w w w. c e n t r a l s e m i . c o m