2N4416 2N4416A SILICON N-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS VDS IG PD TJ, Tstg 2N4416 30 30 30 10 300 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4416 SYMBOL TEST CONDITIONS MIN MAX IGSS VGS=20V, VDS=0 100 IGSS VGS=20V, VDS=0, TA=150°C 100 IDSS VDS=15V, VGS=0 5.0 15 BVGSS IG=1.0μA 30 VGS(off) VDS=15V, ID=1.0nA 6.0 gFS VDS=15V, VGS=0, f=1.0kHz 4,500 7,500 gOS VDS=15V, VGS=0, f=1.0kHz 50 Crss VDS=15V, VGS=0, f=1.0MHz 1.0 Ciss VDS=15V, VGS=0, f=1.0MHz 4.0 Coss VDS=15V, VGS=0, f=1.0MHz 2.0 HIGH FREQUENCY CHARACTERISTICS: SYMBOL TEST CONDITIONS giss biss goss boss gfs Gps NF VDS=15V, VDS=15V, VDS=15V, VDS=15V, VDS=15V, VDS=15V, VDS=15V, VGS=0 VGS=0 VGS=0 VGS=0 VGS=0 ID=5.0mA ID=5.0mA, RG=1.0kΩ 100MHz MIN MAX 18 - 2N4416A 35 35 35 100 2,500 75 1,000 2.0 UNITS V V V mA mW °C 2N4416A MIN MAX 100 100 5.0 15 35 2.5 6.0 4,500 7,500 50 1.0 4.0 2.0 UNITS pA nA mA V V μS μS pF pF pF 400MHz MIN MAX UNITS 1,000 10,000 100 4,000 4,000 10 4.0 μS μS μS μS μS dB dB R2 (4-June 2013) 2N4416 2N4416A SILICON N-CHANNEL JFETS TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate 4) Case MARKING: FULL PART NUMBER R2 (4-June 2013) w w w. c e n t r a l s e m i . c o m 2N4416 2N4416A w w w. c e n t r a l s e m i . c o m SILICON N-CHANNEL JFETS TYPICAL ELECTRICAL CHARACTERISTICS R2 (4-June 2013) w w w. c e n t r a l s e m i . c o m 2N4416 2N4416A SILICON N-CHANNEL JFETS TYPICAL ELECTRICAL CHARACTERISTICS R2 (4-June 2013) w w w. c e n t r a l s e m i . c o m