2N3819 w w w. c e n t r a l s e m i . c o m SILICON N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Drain-Source Voltage Gate-Source Voltage SYMBOL VDG VDS VGS IG Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature PD TJ, Tstg ELECTRICAL SYMBOL IGSS IGSS CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VGS=15V VGS=15V, TA=100°C IDSS VDS=15V IG=1.0μA BVGSS VGS(OFF) VGS |Yfs| |Yfs| |Yos| VDS=15V, VDS=15V, 2.0 25 UNITS V 25 V 25 V 10 mA 360 mW -65 to +150 °C MAX 2.0 UNITS nA 2.0 μA 20 mA 25 ID=2.0nA ID=200μA VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=100MHz V 8.0 V 0.5 7.5 V 2.0 6.5 mS 1.6 mS VGS=0, f=1.0kHz VGS=0, f=1.0MHz 50 μS Ciss VDS=15V, VDS=15V, 8.0 pF Crss VDS=15V, VGS=0, f=1.0MHz 4.0 pF R1 (9-January 2014) 2N3819 SILICON N-CHANNEL JFET TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Drain 2) Gate 3) Source MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS R1 (9-January 2014) w w w. c e n t r a l s e m i . c o m 2N3819 SILICON N-CHANNEL JFET R1 (9-January 2014) w w w. c e n t r a l s e m i . c o m