LS4416 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4416 The LS4416 is a N-Channel high frequency JFET amplifier FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4416 EXCEPTIONAL GAIN (400 MHz) VERY LOW NOISE FIGURE (400 MHz) VERY LOW DISTORTION HIGH AC/DC SWITCH OFF‐ISOLATION ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) The LS4416 N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-18 package is well suited for military applications and harsh environment applications. LS4416 Benefits: Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source LS4416 Applications: 10dB (min) 4dB (max) High-Frequency Amplifier / Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches ‐65°C to +200°C ‐55°C to +135°C 300mW 10mA ‐30V LS4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVGSS Gate to Source Breakdown Voltage ‐30 ‐‐ ‐‐ V VGS(off) Gate to Source Cutoff Voltage ‐‐ ‐‐ ‐6 V IDSS Gate to Source Saturation Current 5 ‐‐ 15 mA IGSS Gate Leakage Current ‐‐ ‐‐ ‐0.1 nA gfs Forward Transconductance 4500 ‐‐ 7500 µS gos Output Conductance ‐‐ ‐‐ 50 µS Ciss Input Capacitance2 ‐‐ ‐‐ 0.8 pF Crss Reverse Transfer Capacitance2 ‐‐ ‐‐ 4 pF Coss Output Capacitance2 ‐‐ ‐‐ 2 pF en Equivalent Input Noise Voltage ‐‐ 6 ‐‐ nV/√Hz LS4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC 100 Mhz 400 Mhz UNITS MIN MAX MIN MAX CONDITIONS IG = ‐1µA, VDS = 0V VDS = 15V, ID = 1nA VDS = 15V, VGS = 0V VGS = ‐20V, VDS = 0V VDS = 15V, VGS = 0V, f = 1kHz Click To Buy gIss Input Conductance ‐‐ 100 ‐‐ 1000 bIss Input Susceptance2 ‐‐ 2500 ‐‐ 10000 goss Output Conductance ‐‐ 75 ‐‐ 100 boss 2 Output Susceptance ‐‐ 1000 ‐‐ 4000 Gfs Forward Transconductance ‐‐ ‐‐ 4000 ‐‐ 2 18 ‐‐ 10 ‐‐ 2 ‐‐ 2 ‐‐ 4 Gps Power Gain NF Noise Figure NOTES VDS = 15V, VGS = 0V, f = 1MHz VDS = 10V, VGS = 0V, f = 1kHz CONDITIONS µS VDS = 15V, VGS = 0V dB VDS = 15V, ID = 5mA VDS = 15V, ID = 5mA, RG = 1kΩ 1 . Absolute maximum ratings are limiting values above which LS4416 serviceability may be impaired. 2. Not production tested, guaranteed by design Micross Components Europe Available Packages: TO-18 (Bottom View) LS4416 in TO-18 LS4416 in bare die. Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx