N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) • Low Noise • Low Feedback Capacitance Output Capacitance • Low • High Transconductance • High Power Gain PIN CONFIGURATION TO-72 C G D CJ1 S TO-92 S D G Gate-Source or Gate-Drain Voltage 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V 2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Storage Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC Operating Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/ oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package 2N4416 2N4416A PN4416 X2N4416 Hermetic TO-72 Hermetic TO-72 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +135oC -55oC to +135oC -55oC to +135oC -55oC to +135oC 2N4416 / 2N4416A / PN4416 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL IGSS BVGSS PARAMETER MIN UNITS -0.1 nA -0.1 µA TEST CONDITIONS VGS = -20V, VDS = 0 Gate Reverse Current 2N4416/PN4416 -30 2N4416A -35 Gate-Source Breakdown Voltage TA = 150oC IG = -1µA, VDS = 0 V 2N4416/PN4416 VGS(off) MAX -6 Gate-Source Cutoff Voltage VDS = 15V, ID = 1nA 2N4416A VGS(f) Gate-Source Forward Voltage IDSS Drain Current at Zero Gate Voltage gfs Common-Source Forward Transconductance gos -2.5 -6 1 V 5 15 mA 4500 7500 µS Common-Source Output Conductance 50 µs Crss Common-Source Reverse Transfer Capacitance (Note 1) 0.8 pF Ciss Common-Source Input Capacitance (Note 1) IG = 1mA, VDS = 0 f = 1kHz VDS = 15V, VGS = 0 f = 1MHz 4 pF Coss Common-Source Input Capacitance (Note 1) 2 ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) 100MHz SYMBOL 400MHz PARAMETER UNITS MIN MAX MIN TEST CONDITIONS MAX giss Common-Source Input Conductance 100 1000 biss Common-Source Input Susceptance 2500 10,000 goss Common-Source Output Conductance 75 100 boss Common-Source Output Susceptance 1000 4000 gfs Common-Source Forward Transconductance Gps Common-Source Power Gain µS VDS = 15V, VGS = 0 (Note 1) 4000 18 10 VDS = 15V, ID = 5mA (Note 1) dB NF Noise Figure (Note 1) NOTE 1: For design reference only, not 100% tested. 2 4 VDS = 15V, ID = 5mA, RG = 1kΩ