CALOGIC X2N4416

N-Channel JFET
High Frequency Amplifier
CORPORATION
2N4416 / 2N4416A / PN4416
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
• Low Noise
• Low Feedback Capacitance
Output Capacitance
• Low
• High Transconductance
• High Power Gain
PIN CONFIGURATION
TO-72
C
G
D
CJ1
S
TO-92
S D
G
Gate-Source or Gate-Drain Voltage
2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC
Operating Temperature Range
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/ oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
2N4416
2N4416A
PN4416
X2N4416
Hermetic TO-72
Hermetic TO-72
Plastic TO-92
Sorted Chips in Carriers
Temperature Range
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
2N4416 / 2N4416A / PN4416
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
IGSS
BVGSS
PARAMETER
MIN
UNITS
-0.1
nA
-0.1
µA
TEST CONDITIONS
VGS = -20V, VDS = 0
Gate Reverse Current
2N4416/PN4416
-30
2N4416A
-35
Gate-Source Breakdown Voltage
TA = 150oC
IG = -1µA, VDS = 0
V
2N4416/PN4416
VGS(off)
MAX
-6
Gate-Source Cutoff Voltage
VDS = 15V, ID = 1nA
2N4416A
VGS(f)
Gate-Source Forward Voltage
IDSS
Drain Current at Zero Gate Voltage
gfs
Common-Source Forward Transconductance
gos
-2.5
-6
1
V
5
15
mA
4500
7500
µS
Common-Source Output Conductance
50
µs
Crss
Common-Source Reverse Transfer Capacitance (Note 1)
0.8
pF
Ciss
Common-Source Input Capacitance (Note 1)
IG = 1mA, VDS = 0
f = 1kHz
VDS = 15V,
VGS = 0
f = 1MHz
4
pF
Coss
Common-Source Input Capacitance (Note 1)
2
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
100MHz
SYMBOL
400MHz
PARAMETER
UNITS
MIN
MAX
MIN
TEST CONDITIONS
MAX
giss
Common-Source Input Conductance
100
1000
biss
Common-Source Input Susceptance
2500
10,000
goss
Common-Source Output
Conductance
75
100
boss
Common-Source Output Susceptance
1000
4000
gfs
Common-Source Forward
Transconductance
Gps
Common-Source Power Gain
µS
VDS = 15V, VGS = 0 (Note 1)
4000
18
10
VDS = 15V, ID = 5mA (Note 1)
dB
NF
Noise Figure (Note 1)
NOTE 1: For design reference only, not 100% tested.
2
4
VDS = 15V, ID = 5mA, RG = 1kΩ