2N918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO IC 3.0 V 50 mA PD PD 200 mW 300 mW -65 to +200 °C Thermal Resistance TJ, Tstg ΘJA 87.5 °C/W Thermal Resistance ΘJC 58.3 °C/W MAX 10 UNITS nA 1.0 μA Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature 30 UNITS V ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=15V VCB=15V, TA=150°C BVCBO IC=1.0μA 30 V BVCEO IC=3.0mA 15 V BVEBO IE=10μA 3.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.4 V VBE(SAT) IC=10mA, IB=1.0mA 1.0 V hFE fT VCE=1.0V, IC=3.0mA VCE=10V, IC=4.0mA, f=100MHz Cob Cob VCB=10V, IE=0, f=1.0MHz VEB=0, IE=0, f=1.0MHz 1.7 3.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz VCB=15V, IC=8.0mA, f=500MHz 2.0 pF Po Gpe NF VCB=12V, IC=6.0mA, f=200MHz VCB=15V, IC=8.0mA, f=500MHz VCE=6.0V, IC=1.0mA, RG=400Ω, f=60kHz 20 600 MHz pF 30 mW 15 dB 25 % 6.0 dB R1 (11-September 2012) 2N918 NPN SILICON RF TRANSISTOR TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector 4) Case MARKING: FULL PART NUMBER R1 (11-September 2012) w w w. c e n t r a l s e m i . c o m