CXT5551 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC UNITS 180 V 160 V 6.0 V 600 PD TJ, Tstg 1.2 mA W -65 to +150 °C ΘJA 104 °C/W MAX UNITS nA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=120V 50 ICBO 50 μA IEBO VCB=120V, TA=100°C VEB=4.0V 50 nA BVCBO IC=100μA 180 BVCEO BVEBO IC=1.0mA IE=10μA 160 V 6.0 V VCE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.15 V 0.20 V IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 1.00 V 1.00 V VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, VCB=10V, IC=10mA, f=100MHz IE=0, f=1.0MHz 100 VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, 50 Cob hfe NF f=10Hz to 15.7kHz V 80 80 250 300 MHz 6.0 pF 200 8.0 dB R6 (23-February 2010) CXT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R6 (23-February 2010) w w w. c e n t r a l s e m i . c o m