CEDM8004VL - Central Semiconductor Corp.

CEDM8004VL
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8004VL is an
P-Channel Enhancement-mode MOSFET, manufactured
by the P-Channel DMOS process, designed for high speed
pulsed amplifier and driver applications. This MOSFET
offers low rDS(ON) and low threshold voltage.
MARKING CODE: V
COMPLEMENTARY N-CHANNEL: CEDM7004VL
FEATURES:
• ESD protection up to 2kV
• 0.32mm very low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
SOT-883VL CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
MAXIMUM RATING: (TA=25°C)
Drain-Source Voltage
SYMBOL
VDS
VGS
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
8.0
V
ID
PD
450
mA
100
mW
TJ, Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=0, IS=100mA
UNITS
V
30
MAX
3.0
UNITS
μA
1.0
μA
30
V
0.5
VGS=4.5V, ID=430mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=100mA
VDS =10V, ID=100mA
VDS=25V, VGS=0, f=1.0MHz
1.0
V
1.1
V
1.0
1.1
Ω
1.6
2.0
Ω
2.6
3.3
200
Ω
mS
8.9
10
pF
45
55
pF
8.5
15
Ciss
Coss
Qg(tot)
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
ID=1.0A
0.88
nC
Qgs
ID=1.0A
VDS=10V, VGS=4.5V, ID=1.0A
0.35
nC
0.128
nC
Qgd
VDS=10V,
VDS=10V,
VGS=4.5V,
VGS=4.5V,
pF
R3 (21-November 2014)
CEDM8004VL
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-883VL CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
2
3
1
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: V
Package Type Options (all dimensions are maximum - in mm)
Length
Width
Height
SOT-883VL
Package
1.05
0.65
0.32
PD (mW)
100
Central Item Number
SOT-883L
1.05
0.65
0.40
100
CEDM8004
SOT-523
1.70
1.70
0.78
250
CMUDM8004
CEDM8004VL
R3 (21-November 2014)
w w w. c e n t r a l s e m i . c o m
CEDM8004VL
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (21-November 2014)
w w w. c e n t r a l s e m i . c o m