H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0300 Rev.3.00 Oct 16, 2006 Features • • • • • Low on-resistance Low drive current High speed switching Low gate change Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.3.00 Oct 16, 2006 page 1 of 7 Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 250 ±30 5 20 5 20 5 25 5 150 –55 to +150 Unit V V A A A A A W °C/W °C °C H5N2505DL, H5N2505DS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Symbol V (BR) DSS IDSS IGSS VGS (off) |yfs| RDS (on) Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF Min 250 — — 3.0 2.0 — — — — — — — — — — — — Typ — — — — 3.3 0.68 300 42 11 11 2 5 18 18 44 11 1.0 Max — 1 ±0.1 4.5 — 0.89 — — — — — — — — — — 1.5 Unit V µA µA V S Ω pF pF pF nC nC nC ns ns ns ns V Body-drain diode reverse recovery time Body-drain diode reverse recovery charge trr Qrr — — 100 0.32 — — ns µC Note: 4. Pulse test Rev.3.00 Oct 16, 2006 page 2 of 7 Test Conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2.5 A, VDS = 10 V Note 4 ID = 2.5 A, VGS = 10 V Note 4 VDS = 25 V, VGS = 0, f = 1 MHz VDD = 200 V, VGS = 10 V, ID = 5 A VDD ≅ 125 V, ID = 2.5 A, VGS = 10 V RL = 50 Ω, Rg = 10 Ω IF = 5 A, VGS = 0 Note 4 IF = 5 A, VGS = 0 diF/dt = 100 A/µs H5N2505DL, H5N2505DS Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Ta = 25°C 300 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 100 30 10 1 P DC W = ms (Tc Op 10 m s = 2 erat 5°C ion ) 3 1 0.3 10 µ 0µ s s 10 0.1 Operation in this area is limited by RDS(on) 0.03 0.01 0 10 50 100 150 1 200 100 30 10 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 V Pulse Test 6 6V 4 5.5 V 2 5V Drain Current ID (A) 8V 8 −25°C VDS = 10 V Pulse Test 7V Drain Current ID (A) 3 25°C 8 Tc = 75°C 6 4 2 VGS = 4.5 V 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 8 Pulse Test 6 ID = 5 A 4 2 2A 1A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.3.00 Oct 16, 2006 page 3 of 7 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) 0 10 VGS = 10 V 5 2 1 0.5 0.2 0.1 0.1 Pulse Test 0.3 1 3 10 30 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) H5N2505DL, H5N2505DS 2.0 VGS = 10 V Pulse Test 1.6 2A 1.2 ID = 5 A 0.8 1A 0.4 0 −25 0 25 50 75 100 125 150 10 Tc = −25°C 3 1 75°C 25°C 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1 10 3 30 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 500 VGS = 0 f = 1 MHz 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 30 Case Temperature Tc (°C) 1000 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 1000 300 Ciss 100 30 Coss 10 Crss 3 1 1 1 3 10 30 100 300 150 Dynamic Input Characteristics Switching Characteristics VGS VDD = 200 V 100 V 50 V 12 VDS 8 4 VDD = 200 V 100 V 50 V 0 4 8 12 16 Gate Charge Qg (nC) Rev.3.00 Oct 16, 2006 page 4 of 7 20 1000 Switching Time t (ns) 16 100 0 100 Drain to Source Voltage VDS (V) ID = 5 A 200 50 Reverse Drain Current IDR (A) 400 300 0 1000 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 100 VGS = 10 V, VDD = 125 V PW = 5 µs, duty ≤ 1 % Rg = 10 Ω tf 100 tr tf td(off) td(on) 10 tr 1 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 H5N2505DL, H5N2505DS Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 10 8 6 4 2 10 V 5V 0 0.4 VGS = 0 V Pulse Test 0.8 1.2 1.6 VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 −25 2.0 0 25 50 75 100 125 150 Case Temperature Tc (°C) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c(t) = γs (t) • θch – c θch – c = 5°C/W, Tc = 25°C 0.1 0.05 0.02 0.03 0.01 ulse p ot 1sh 0.01 10 µ PDM D= PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% V DD = 125 V 90% td(on) Rev.3.00 Oct 16, 2006 page 5 of 7 10% tr 90% td(off) tf H5N2505DL, H5N2505DS Package Dimensions • H5N2505DL JEITA Package Code RENESAS Code PRSS0004ZD-B Previous Code MASS[Typ.] 0.42g DPAK(L)-(2) / DPAK(L)-(2)V 1.7 ± 0.5 Package Name DPAK(L)-(2) 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 • H5N2505DS JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V 6.5 ± 0.5 5.4 ± 0.5 (0.1) MASS[Typ.] 0.28g 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.3.00 Oct 16, 2006 page 6 of 7 Unit: mm (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 H5N2505DL, H5N2505DS Ordering Information Part Name H5N2505DL-E H5N2505DSTL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Oct 16, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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