RJL5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 1 of 6 Symbol VDSS Ratings 500 Unit V VGSS Note4 ID ±30 19 57 19 57 4 0.88 35 3.57 150 –55 to +150 V A A A A A mJ W °C/W °C °C Note1 ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg RJL5014DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 500 — — 2.0 — Typ — — — — 0.32 Max — 10 ±0.1 4.0 0.40 Unit V µA µA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1700 190 23 32 27 95 20 43 8.2 21.8 1.00 — — — — — — — — — — 1.65 pF pF pF ns ns ns ns nC nC nC V trr — 160 — ns Body-drain diode reverse recovery time Notes: 5. Pulse test REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9.5 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 9.5 A VGS = 10 V RL = 26.3 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 19 A IF = 19 A, VGS = 0 Note5 IF = 19 A, VGS = 0 diF/dt = 100 A/µs RJL5014DPP Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 10 10 20 Drain Current ID (A) 0 µs = 10 1 Operation in this area is limited by RDS(on) 0.1 6V 8V µs PW Drain Current ID (A) 100 0.01 5.6 V 5.8 V 1 10 100 12 5.0 V 8 4.8 V 4 4.6 V VGS = 4.4 V 8 12 16 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) Typical Transfer Characteristics 10 Tc = 75°C 25°C 1 −25°C 0.1 0 2 4 6 8 10 Pulse Test VGS = 10 V 1 0.1 10 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature Body-Drain Diode Reverse Recovery Time 100 Pulse Test VGS = 10 V ID = 19 A 0.6 9.5 A 0.4 3A 0.2 0 -25 Reverse Recovery Time trr (ns) 1000 1.0 0.8 20 Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Drain Current ID (A) 4 Drain to Source Voltage VDS (V) 100 Static Drain to Source on State Resistance RDS(on) (Ω) 0 1000 5.2 V Pulse Test Ta = 25°C 1 shot 0.001 0.1 5.4 V 10 V 16 100 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 3 of 6 1 10 Reverse Drain Current IDR (A) 100 RJL5014DPP Typical Capacitance vs. Drain to Source Voltage 1000 Coss 100 Crss 10 1 0 VGS = 0 f = 1 MHz 50 100 150 250 VDS 200 4 VDD = 400 V 250 V 100 V 0 20 0 40 60 80 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Pulse Test VGS = 0, -5 V 10 V 12 5V 8 4 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 4 of 6 12 8 Gate Charge Qg (nC) 16 0 VDD = 100 V 250 V 400 V 600 400 16 VGS ID = 19 A Drain to Source Voltage VDS (V) 20 Reverse Drain Current IDR (A) 200 Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) Ciss 800 5 100 VDS = 10 V 4 ID = 10 mA 1 mA 3 0.1 mA 2 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Gate to Source Voltage VGS (V) 10000 Drain to Source Voltage VDS (V) Dynamic Input Characteristics RJL5014DPP Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57°C/W, Tc = 25°C 0.02 0.01 0.01 e uls tp o sh PDM D= 1 0.001 10 µ PW T PW T 100 µ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 250 V 90% td(on) REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 5 of 6 tr 90% td(off) tf RJL5014DPP Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Part No. RJL5014DPP-00-T2 Quantity 1050 pcs REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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