M95160-145 - STMicroelectronics

M95160-145
Automotive 16-Kbit serial SPI bus EEPROM
with high-speed clock
Features
■
Compatible with SPI bus serial interface
(positive clock SPI modes)
■
Extended operating temperature range:
– Device grade 4: –40 °C to +145 °C
■
Single supply voltage:
– 2.5 V to 5.5 V
■
High speed: 5 MHz
■
Status Register
■
Hardware protection of the Status Register
■
Byte and page write (up to 32 bytes)
■
Self-timed programming cycle
■
Adjustable size read-only EEPROM area
■
Enhanced ESD protection
■
More than 1 million write cycles
■
More than 40-year data retention
■
Package
– RoHS compliant and halogen-free
(ECOPACK2®)
November 2011
TSSOP8 (DW)
169 mil width
Doc ID 022470 Rev 1
1/35
www.st.com
1
Contents
M95160-145
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
2.1
Serial Data output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2
Serial Data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4
Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.5
Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.6
Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.7
VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.8
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Implementing devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1
4
SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.1
4.1.2
Operating supply voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.3
Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.4
Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
Active Power and Standby Power modes . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.5
Data protection and protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.1
Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.2
Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.3
Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3.1
2/35
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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Contents
6.3.2
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3.3
BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3.4
SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.4
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.5
Read from Memory Array (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.6
Write to Memory Array (WRITE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7.1
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
9
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
11
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
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List of tables
M95160-145
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
4/35
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Write-protected block size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Address range bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TSSOP8 – 8-lead thin shrink small outline, package mechanical data. . . . . . . . . . . . . . . . 32
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
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M95160-145
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
TSSOP8-lead package connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Hold mode activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Write Enable (WREN) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Write Disable (WRDI) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read Status Register (RDSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Write Status Register (WRSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read from Memory Array (READ) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Byte Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Page Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Serial output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
TSSOP8 – 8-lead thin shrink small outline, package outline . . . . . . . . . . . . . . . . . . . . . . . 32
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Description
1
M95160-145
Description
The M95160-145 is an EEPROM (Electrically Erasable PROgrammable Memory) accessed
by a high-speed SPI bus.
The memory array is organized as 2048 × 8 bits.
The M95160-145 is the first EEPROM device in a TSSOP package qualified at 145 °C.
The M95160-145 device is designed to be compliant with the very high level of reliability
defined by the Automotive standard AEC-Q100 grade 0.
Figure 1.
Logic diagram
VCC
D
Q
C
S
M95xxx
W
HOLD
VSS
AI01789C
Table 1.
Signal names
Signal name
6/35
Function
Direction
C
Serial Clock
Input
D
Serial Data input
Input
Q
Serial Data output
Output
S
Chip Select
Input
W
Write Protect
Input
HOLD
Hold
Input
VCC
Supply voltage
VSS
Ground
Doc ID 022470 Rev 1
M95160-145
Description
Figure 2.
TSSOP8-lead package connections (top view)
M95xxx
S
Q
W
VSS
1
2
3
4
8
7
6
5
VCC
HOLD
C
D
AI01790D
1. See Package mechanical data section for package dimensions, and how to identify pin-1.
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Signal description
2
M95160-145
Signal description
During all operations, VCC must be held stable and within the specified valid range:
VCC(min) to VCC(max).
All of the input and output signals must be held high or low (according to voltages of VIH,
VOH, VIL or VOL, as specified in Table 10. These signals are described next.
2.1
Serial Data output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be written. Values are latched on the rising edge of Serial Clock
(C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is high, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Write cycle is in progress, the device will be in the Standby
Power mode. Driving Chip Select (S) low selects the device, placing it in the Active Power
mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Hold (HOLD)
The Hold (HOLD) signal is used to pause any serial communications with the device without
deselecting the device.
2.6
Write Protect (W)
The main purpose of this input signal is to freeze the size of the area of memory that is
protected against Write instructions (as specified by the values in the BP1 and BP0 bits of
the Status Register).
This pin must be driven either high or low, and must be stable during all write instructions.
8/35
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M95160-145
2.7
Signal description
VCC supply voltage
VCC is the supply voltage.
2.8
VSS ground
VSS is the reference for the VCC supply voltage.
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Implementing devices on the SPI bus
3
M95160-145
Implementing devices on the SPI bus
Figure 3 shows an example of three devices, connected to the SPI bus master. Only one
device is selected at a time, so that only the selected device drives the Serial Data output
(Q) line. All the other devices outputs are then in high impedance.
Figure 3.
Bus master and memory devices on the SPI bus
6##
3$/
30)INTERFACEWITH
#0/,#0(!
OR
3$)
3#+
# 1 $
6##
# 1 $
6##
# 1 $
6##
30)BUSMASTER
2
#3 #3 #3
30)MEMORY
DEVICE
3
2
7 (/,$
30)MEMORY
DEVICE
3
7 (/,$
2
30)MEMORY
DEVICE
3
7 (/,$
633
-36
1. The Write Protect (W) and Hold (HOLD) signals must be driven high or low as appropriate.
A pull-up resistor connected on each S input (represented in Figure 3) ensures that each
device is not selected if the bus master leaves the S line in the high impedance state.
3.1
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
●
CPOL=0, CPHA=0
●
CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 4, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
10/35
●
C remains at 0 for (CPOL=0, CPHA=0)
●
C remains at 1 for (CPOL=1, CPHA=1)
Doc ID 022470 Rev 1
M95160-145
Implementing devices on the SPI bus
Figure 4.
SPI modes supported
CPOL CPHA
0
0
C
1
1
C
D
MSB
Q
MSB
AI01438B
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Operating features
M95160-145
4
Operating features
4.1
Supply voltage (VCC)
4.1.1
Operating supply voltage VCC
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage
within the specified [VCC(min), VCC(max)] range must be applied (see Table 8). This voltage
must remain stable and valid until the end of the transmission of the instruction and, for a
Write instruction, until the completion of the internal write cycle (tW).
In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line
with a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS
package pins.
4.1.2
Device reset
In order to prevent inadvertent write operations during power-up, a power on reset (POR)
circuit is included. At power-up, the device does not respond to any instruction until VCC
reaches the internal reset threshold voltage (this threshold is lower than the minimum VCC
operating voltage defined in Table 8).
When VCC passes over the POR threshold, the device is reset and in the following state:
●
in Standby Power mode
●
deselected (note that, to be executed, an instruction must be preceded by a falling
edge on Chip Select (S))
●
Status Register value:
–
the Write Enable Latch (WEL) is reset to 0
–
Write In Progress (WIP) is reset to 0
–
The SRWD, BP1 and BP0 bits remain unchanged (non-volatile bits)
When VCC passes over the POR threshold, the device is reset and enters the Standby
Power mode. The device must not be accessed until VCC reaches a valid and stable VCC
voltage within the specified [VCC(min), VCC(max)] range defined in Table 8.
4.1.3
Power-up conditions
When the power supply is turned on, VCC rises continuously from VSS to VCC. During this
time, the Chip Select (S) line is not allowed to float but should follow the VCC voltage, it is
therefore recommended to connect the S line to VCC via a suitable pull-up resistor (see
Figure 3).
In addition, the Chip Select (S) input offers a built-in safety feature, as the S input is edgesensitive as well as level-sensitive: after power-up, the device does not become selected
until a falling edge has first been detected on Chip Select (S). This ensures that Chip Select
(S) must have been high, prior to going low to start the first operation.
The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage
defined in Table 8 and the rise time must not vary faster than 1 V/µs.
12/35
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M95160-145
4.1.4
Operating features
Power-down
During power-down (continuous decrease of VCC below the minimum VCC operating voltage
defined in Table 8), the device must be:
4.2
●
deselected (Chip Select S should be allowed to follow the voltage applied on VCC)
●
in Standby Power mode (there should not be any internal write cycle in progress).
Active Power and Standby Power modes
When Chip Select (S) is low, the device is selected, and in the Active Power mode. The
device consumes ICC, as specified in Table 10.
When Chip Select (S) is high, the device is deselected. If a Write cycle is not currently in
progress, the device then goes into the Standby Power mode, and the device consumption
drops to ICC1.
4.3
Hold condition
The Hold (HOLD) signal is used to pause any serial communications with the device without
resetting the clocking sequence.
The Hold mode starts when the Hold (HOLD) signal is driven low and the Serial Clock (C) is
low (as shown in Figure 5). During the Hold mode, the Serial Data output (Q) is high
impedance, and Serial Data input (D) and Serial Clock (C) are Don’t Care. The Hold mode
ends when the Hold (HOLD) signal is driven high and the Serial Clock (C) is or becomes
low.
Figure 5.
Hold mode activation
#
(/,$
(OLD
CONDITION
(OLD
CONDITION
#ONDITION
-36
Deselecting the device while it is in Hold mode resets the paused communication.
4.4
Status Register
Figure 6. shows the position of the Status Register in the control logic of the device. The
Status Register contains a number of status and control bits that can be read or set (as
appropriate) by specific instructions. See Section 6.3: Read Status Register (RDSR) for a
detailed description of the Status Register bits
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Operating features
4.5
M95160-145
Data protection and protocol control
Non-volatile memory devices can be used in environments that are particularly noisy, and
within applications that could experience problems if memory bytes are corrupted.
Consequently, the device features the following data protection mechanisms:
●
Write and Write Status Register instructions are checked that they consist of a number
of clock pulses that is a multiple of eight, before they are accepted for execution.
●
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Write Disable (WRDI) instruction completion
–
Write Status Register (WRSR) instruction completion
–
Write (WRITE) instruction completion
●
The Block Protect (BP1, BP0) bits in the Status Register allow part of the memory to be
configured as read-only.
●
The Write Protect (W) signal allows the Block Protect (BP1, BP0) bits of the Status
Register to be protected.
For any instruction to be accepted, and executed, Chip Select (S) must be driven high after
the rising edge of Serial Clock (C) for the last bit of the instruction, and before the next rising
edge of Serial Clock (C).
Two points need to be noted in the previous sentence:
●
The “last bit of the instruction” can be the eighth bit of the instruction code, or the eighth
bit of a data byte, depending on the instruction (except for Read Status Register
(RDSR) and Read (READ) instructions).
●
The “next rising edge of Serial Clock (C)” might (or might not) be the next bus
transaction for some other device on the SPI bus.
Table 2.
Write-protected block size
Status Register bits
Protected block
14/35
Protected array addresses
BP1
BP0
0
0
none
0
1
Upper quarter
0600h - 07FFh
1
0
Upper half
0400h - 07FFh
1
1
Whole memory
0000h - 07FFh
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none
M95160-145
Memory organization
The memory is organized as shown in Figure 6.
Figure 6.
Block diagram
HOLD
W
High voltage
generator
Control logic
S
C
D
I/O shift register
Q
Address register
and counter
Data
register
Status
Register
Size of the
read-only
EEPROM
area
Y decoder
5
Memory organization
1 page
X decoder
AI01272d
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Instructions
6
M95160-145
Instructions
Each instruction starts with a single-byte code, as summarized in Table 3.
If an invalid instruction is sent (one not contained in Table 3.), the device automatically
deselects itself.
Table 3.
Instruction set
Instruction
6.1
Description
Instruction format
WREN
Write Enable
0000 0110
WRDI
Write Disable
0000 0100
RDSR
Read Status Register
0000 0101
WRSR
Write Status Register
0000 0001
READ
Read from Memory Array
0000 0011
WRITE
Write to Memory Array
0000 0010
Write Enable (WREN)
The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction.
The only way to do this is to send a Write Enable instruction to the device.
As shown in Figure 7., to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D). The device then
enters a wait state. It waits for the device to be deselected, by Chip Select (S) being driven
high.
Figure 7.
Write Enable (WREN) sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI02281E
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6.2
Instructions
Write Disable (WRDI)
One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction
to the device.
As shown in Figure 8., to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D).
The device then enters a wait state. It waits for a the device to be deselected, by Chip Select
(S) being driven high.
The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events:
●
Power-up
●
WRDI instruction execution
●
WRSR instruction completion
●
WRITE instruction completion.
Figure 8.
Write Disable (WRDI) sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03750D
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Instructions
6.3
M95160-145
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The
Status Register may be read at any time, even while a Write or Write Status Register cycle
is in progress. When one of these cycles is in progress, it is recommended to check the
Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible
to read the Status Register continuously, as shown in Figure 9.
The status and control bits of the Status Register are as follows:
6.3.1
WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write
Status Register cycle. When set to 1, such a cycle is in progress, when reset to 0 no such
cycle is in progress.
6.3.2
WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable
Latch is reset and no Write or Write Status Register instruction is accepted.
6.3.3
BP1, BP0 bits
The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be
software protected against Write instructions. These bits are written with the Write Status
Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits is set to
1, the relevant memory area (as defined in Table 4.) becomes protected against Write
(WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the
Hardware Protected mode has not been set.
6.3.4
SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware Protected mode (when the Status Register
Write Disable (SRWD) bit is set to 1, and Write Protect (W) is driven low). In this mode, the
non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the
Write Status Register (WRSR) instruction is no longer accepted for execution.
Table 4.
Status Register format
b7
SRWD
b0
0
0
0
BP1
BP0
WEL
WIP
Status register write protect
Block protect bits
Write enable latch bit
Write in progress bit
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Instructions
Figure 9.
Read Status Register (RDSR) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
6
5
4
3
MSB
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI02031E
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Instructions
6.4
M95160-145
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must have been
previously executed.
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) low,
followed by the instruction code, the data byte on Serial Data input (D) and the Chip Select
(S) driven high. Chip Select (S) must be driven high after the rising edge of Serial Clock (C)
that latches in the eighth bit of the data byte, and before the next rising edge of Serial Clock
(C). Otherwise, the Write Status Register (WRSR) instruction is not executed.
Driving the Chip Select (S) signal high at a byte boundary of the input data triggers the selftimed write cycle that takes tW to complete (as specified in Table 12).
The instruction sequence is shown in Figure 10.
While the Write Status Register cycle is in progress, the Status Register may still be read to
check the value of the Write In Progress (WIP) bit: the WIP bit is 1 during the self-timed write
cycle tW, and is 0 when the write cycle is complete. The WEL bit (Write Enable Latch) is also
reset at the end of the write cycle tW.
The Write Status Register (WRSR) instruction allows the user to change the values of the
BP1, BP0 bits and the SRWD bit:
●
The Block Protect (BP1, BP0) bits define the size of the area that is to be treated as
read only, as defined in Table 5.
●
The SRWD bit (Status Register Write Disable bit), in accordance with the signal read
on the Write Protect pin (W), allows the user to set or reset the write protection mode of
the Status Register itself. When in Write-protected mode, the Write Status Register
(WRSR) instruction is not executed.
The contents of the SRWD and BP1, BP0 bits are updated after the completion of the
WRSR instruction, including the tW Write cycle.
The Write Status Register (WRSR) instruction has no effect on bits b6, b5, b4, b1, b0 of the
Status Register. Bits b6, b5, b4 are always read as 0.
Table 5.
Protection modes
W
SRWD
signal
bit
1
0
0
0
1
0
1
1
Mode
Write protection of the
Status Register
Memory content
Protected area(1)
Unprotected area(1)
Status Register is
Writable (if the WREN
Software- instruction has set the
protected WEL bit)
(SPM)
The values in the BP1
and BP0 bits can be
changed
Write-protected
Ready to accept
Write instructions
Status Register is
Hardware- Hardware write protected
protected The values in the BP1
(HPM)
and BP0 bits cannot be
changed
Write-protected
Ready to accept
Write instructions
1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 4.
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Instructions
The protection features of the device are summarized in Table 2.
When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial
delivery state), it is possible to write to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless
of whether Write Protect (W) is driven high or low.
When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two
cases need to be considered, depending on the state of Write Protect (W):
●
If Write Protect (W) is driven high, it is possible to write to the Status Register provided
that the Write Enable Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction.
●
If Write Protect (W) is driven low, it is not possible to write to the Status Register even if
the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN)
instruction. (Attempts to write to the Status Register are rejected, and are not accepted
for execution). As a consequence, all the data bytes in the memory area that are
software protected (SPM) by the Block Protect (BP1, BP0) bits of the Status Register,
are also hardware protected against data modification.
Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be
entered:
●
by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W)
low
●
or by driving Write Protect (W) low after setting the Status Register Write Disable
(SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull Write
Protect (W) high.
If Write Protect (W) is permanently tied high, the Hardware Protected Mode (HPM) can
never be activated, and only the Software Protected Mode (SPM), using the Block Protect
(BP1, BP0) bits of the Status Register, can be used.
Table 6.
Address range bits(1)
Device
M95160-145
Address bits
A10-A0
1. b15 to b11 are Don’t Care.
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Instructions
M95160-145
Figure 10. Write Status Register (WRSR) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI02282D
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6.5
Instructions
Read from Memory Array (READ)
As shown in Figure 11., to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte and address bytes are then shifted in, on Serial Data
Input (D). The address is loaded into an internal address register, and the byte of data at
that address is shifted out, on Serial Data Output (Q).
If Chip Select (S) continues to be driven low, the internal address register is automatically
incremented, and the byte of data at the new address is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the
Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a
single READ instruction.
The Read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip
Select (S) signal can occur at any time during the cycle.
The first byte addressed can be any byte within any page.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 11. Read from Memory Array (READ) sequence
S
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
C
Instruction
16-Bit Address
15 14 13
D
3
2
1
0
MSB
Data Out 1
High Impedance
7
Q
6
5
4
3
2
Data Out 2
1
0
7
MSB
AI01793D
1. Depending on the memory size, as shown in Table 6., the most significant address bits are Don’t Care.
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Instructions
6.6
M95160-145
Write to Memory Array (WRITE)
As shown in Figure 12., to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte, address byte, and at least one data byte are then shifted
in, on Serial Data Input (D).
The instruction is terminated by driving Chip Select (S) high at a byte boundary of the input
data. The self-timed Write cycle, triggered by the Chip Select (S) rising edge, continues for a
period tW (as specified in Table 12), at the end of which the Write in Progress (WIP) bit is
reset to 0.
In the case of Figure 12., Chip Select (S) is driven high after the eighth bit of the data byte
has been latched in, indicating that the instruction is being used to write a single byte. If,
though, Chip Select (S) continues to be driven low, as shown in Figure 13., the next byte of
input data is shifted in, so that more than a single byte, starting from the given address
towards the end of the same page, can be written in a single internal Write cycle.
Each time a new data byte is shifted in, the least significant bits of the internal address
counter are incremented. If the number of data bytes sent to the device exceeds the page
boundary, the internal address counter rolls over to the beginning of the page, and the
previous data there are overwritten with the incoming data. (The page size of these devices
is 32 bytes).
The instruction is not accepted, and is not executed, under the following conditions:
●
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before)
●
if a Write cycle is already in progress
●
if the device has not been deselected, by Chip Select (S) being driven high, at a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in)
●
if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits.
Figure 12. Byte Write (WRITE) sequence
S
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
C
Instruction
16-Bit Address
15 14 13
D
3
2
Data Byte
1
0
7
6
5
4
3
2
1
0
High Impedance
Q
AI01795D
1. Depending on the memory size, as shown in Table 6., the most significant address bits are Don’t Care.
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Instructions
Figure 13. Page Write (WRITE) sequence
S
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
C
Instruction
16-Bit Address
15 14 13
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Data Byte 2
D
7
6
5
4
3
2
Data Byte 3
1
0
7
6
5
4
3
2
Data Byte N
1
0
6
5
4
3
2
1
0
AI01796D
1. Depending on the memory size, as shown in Table 6., the most significant address bits are Don’t Care.
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Delivery state
M95160-145
7
Delivery state
7.1
Initial delivery state
The device is delivered with the memory array set at all 1s (FFh). The Status Register Write
Disable (SRWD) and Block Protect (BP1 and BP0) bits are initialized to 0.
8
Absolute maximum ratings
Stressing the device outside the ratings listed in Table 7 may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 7.
Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
TSTG
Storage temperature
–65
150
°C
TAMR
Ambient operating temperature
–40
150
°C
TLEAD
Lead temperature during soldering
See note (1)
VO
Voltage on Q pin
–0.50
VCC+0.6
V
VI
Input voltage
–0.50
6.5
V
IOL
DC output current (Q = 0)
5
mA
IOH
DC output current (Q = 1)
–5
mA
VCC
Supply voltage
6.5
V
4000
V
VESD
–0.50
Electrostatic pulse (Human Body Model)
(2)
1. Compliant with JEDEC Std J-STD-020 (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU
2. Positive and negative pulses applied on pin pairs, in accordance with AEC-Q100-002 (compliant with
JEDEC Std JESD22-A114, C1=100 pF, R1=1500 Ω, R2=500 Ω)
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9
DC and AC parameters
DC and AC parameters
This section summarizes the operating and measurement conditions, and the dc and ac
characteristics of the device. The parameters in the dc and ac characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 8.
Operating conditions
Symbol
VCC
TA
Table 9.
Parameter
Min.
Max.
Unit
Supply voltage
2.5
5.5
V
Ambient operating temperature (device grade 4)
–40
145
°C
AC measurement conditions
Symbol
CL
Parameter
Min.
Load capacitance
Typ.
Max.
Unit
30 or 100
pF
Input rise and fall times
50
ns
Input pulse voltages
0.2VCC to 0.8VCC
V
Input and output(1) timing reference voltages
0.3VCC to 0.7VCC
V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 14. AC measurement I/O waveform
)NPUTVOLTAGELEVELS
)NPUTANDOUTPUT
TIMINGREFERENCELEVELS
6##
6##
6##
6##
!)#
Table 10.
Symbol
COUT
CIN
Capacitance(1)
Parameter
Output capacitance (Q)
Test condition
Min.
Max.
Unit
VOUT = 0 V
8
pF
Input capacitance (D)
VIN = 0 V
8
pF
Input capacitance (other pins)
VIN = 0 V
6
pF
1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.
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DC and AC parameters
Table 11.
Symbol
M95160-145
DC characteristics(1)
Parameter
Test conditions (in addition to those
specified in Table 8, Table 9 and
Table 10)
Max.
Unit
ILI
Input leakage
current
VIN = VSS or VCC
±2
µA
ILO
Output leakage
current
S = VCC, VOUT = VSS or VCC
±2
µA
ICC
Supply current
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 2.5 V, Q = open
2
mA
Supply current
(Standby)
S = VCC, VCC = 2.5 V, VIN = VSS or VCC
10
µA
ICC1
S = VCC, VCC = 5.5 V, VIN = VSS or VCC
10
µA
VIL
Input low voltage
–0.45
0.3 VCC
V
VIH
Input high voltage
0.7 VCC
VCC+1
V
VOL
Output low voltage
0.4
V
VOH
Output high voltage IOH = –0.4 mA, VCC = 2.5 V
IOL = 1.5 mA, VCC = 2.5 V
1. Preliminary data.
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Min.
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0.8 VCC
V
M95160-145
DC and AC parameters
Table 12.
AC characteristics
Test conditions specified in Table 8, Table 9 and Table 10
Symbol
Alt.
fC
fSCK
Clock frequency
tSLCH
tCSS1
S active setup time
60
ns
tSHCH
tCSS2
S not active setup time
60
ns
tSHSL
tCS
S deselect time
90
ns
tCHSH
tCSH
S active hold time
60
ns
S not active hold time
60
ns
tCHSL
Parameter
Min.
Max.
Unit
D.C.
5
MHz
tCH(1)
tCLH
Clock high time
75
ns
tCL(1)
75
ns
tCLL
Clock low time
tCLCH
(2)
tRC
Clock rise time
1
µs
tCHCL
(2)
tFC
Clock fall time
1
µs
tDVCH
tDSU
Data in setup time
20
ns
tCHDX
tDH
Data in hold time
20
ns
tHHCH
Clock low hold time after HOLD not active
60
ns
tHLCH
Clock low hold time after HOLD active
60
ns
tCLHL
Clock low setup time before HOLD active
0
ns
tCLHH
Clock low setup time before HOLD not active
0
ns
tSHQZ(2)
tDIS
tCLQV(3)
tV
tCLQX
tHO
Output hold time
tQLQH(2)
tRO
Output rise time
80
ns
tQHQL(2)
tFO
Output fall time
80
ns
tHHQV
tLZ
HOLD high to output valid
80
ns
tHLQZ(2)
tHZ
HOLD low to output high-Z
80
ns
tW
tWC
Write time
5
ms
Output disable time
80
ns
Clock low to output valid (CL = 30 pF)
55
ns
Clock low to output valid (CL = 100 pF)
80
ns
0
ns
1. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max). See also Note 3.
2. Value guaranteed by characterization, not 100% tested in production.
3. tCLQV must be compatible with tCL (clock low time): if the SPI bus master offers a Read setup time tSU =
0 ns, tCL can be equal to (or greater than) tCLQV; in all other cases, tCL must be equal to (or greater than)
tCLQV+tSU.
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DC and AC parameters
M95160-145
Figure 15. Serial input timing
tSHSL
S
tCHSL
tCH
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCL
tCLCH
tCHDX
D
Q
LSB IN
MSB IN
High impedance
AI01447d
Figure 16. Hold timing
S
tHLCH
tCLHL
tHHCH
C
tCLHH
tHLQZ
tHHQV
Q
HOLD
AI01448c
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DC and AC parameters
Figure 17. Serial output timing
S
tCH
tSHSL
C
tCLQV
tCLCH
tCHCL
tCL
tSHQZ
tCLQX
Q
tQLQH
tQHQL
ADDR
D LSB IN
AI01449f
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Package mechanical data
10
M95160-145
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 18. TSSOP8 – 8-lead thin shrink small outline, package outline
D
8
5
c
E1
1
E
4
α
L
A1
A
A2
L1
CP
b
e
TSSOP8AM
1. Drawing is not to scale.
Table 13.
TSSOP8 – 8-lead thin shrink small outline, package mechanical data
inches(1)
millimeters
Symbol
Typ
Min
A
Max
0.05
0.15
0.8
1.05
b
0.19
c
0.09
1
CP
Max
0.0472
0.002
0.0059
0.0315
0.0413
0.3
0.0075
0.0118
0.2
0.0035
0.0079
0.0394
0.1
0.0039
D
3
2.9
3.1
0.1181
0.1142
0.122
e
0.65
-
-
0.0256
-
-
E
6.4
6.2
6.6
0.252
0.2441
0.2598
E1
4.4
4.3
4.5
0.1732
0.1693
0.1772
L
0.6
0.45
0.75
0.0236
0.0177
0.0295
L1
1
0°
8°
0.0394
α
0°
N (number of leads)
8
8°
1. Values in inches are converted from mm and rounded to 4 decimal digits.
32/35
Min
1.2
A1
A2
Typ
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M95160-145
11
Part numbering
Part numbering
Table 14.
Ordering information scheme
Example:
M95160
–
W DW 4
T
P /SC
Device type
M95 = SPI serial access EEPROM
Device function
160 = 16 Kbit (2048 × 8)
Operating voltage
W = VCC = 2.5 to 5.5 V
Package
DW = TSSOP8
Device grade
4 = Device tested with high reliability certified flow(1).
Automotive temperature range (–40 to 145 °C)
Option
blank = Standard packing
T = Tape and reel packing
Plating technology
G or P = ECOPACK2® (RoHS compliant and halogen-free)
Process
/SC = F6SP36%
1. The high reliability certified flow (HRCF) is described in quality note QNEE9801. Please ask your nearest
ST sales office for a copy.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
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Revision history
12
Revision history
Table 15.
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M95160-145
Document revision history
Date
Revision
28-Nov-2011
1
Changes
Initial release.
Doc ID 022470 Rev 1
M95160-145
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