RENESAS HSU83

HSU83
Silicon Epitaxial Planar Diode for High Voltage Switching
REJ03G0189-0300
Rev.3.00
Feb 16, 2005
Features
• High reverse voltage. (VR = 250 V)
• Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Renesas Code
Previous Code
HSU83
T
PTSP0002ZA-A
URP
Pin Arrangement
1
T
Cathode mark
Mark
2
1. Cathode
2. Anode
Rev.3.00 Feb 16, 2005 page 1 of 4
HSU83
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
VRM
300
V
Reverse voltage
Peak forward current
VR
IFM
250
300
V
mA
Non-Repetitive peak forward surge current
Average rectified current
IFSM *
IO
2
100
A
mA
Junction temperature
Storage temperature
Tj
Tstg
150
–55 to +150
°C
°C
Note:
Symbol
1
Value
Unit
1. Value at duration of 10 ms.
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Symbol
VF
Min
—
Typ
—
Max
1.2
Unit
V
Reverse current
Capacitance
Reverse recovery time
IR1
IR2
—
—
—
—
0.2
100
µA
VR = 250 V
VR = 300 V
C
trr
—
—
—
—
3.0
100
pF
ns
VR = 0 V, f = 1 MHz
IF = IR = 30 mA, Irr = 3 mA
Rev.3.00 Feb 16, 2005 page 2 of 4
Test Condition
IF = 100 mA
HSU83
Main Characteristics
10–5
10–2
10–4
Reverse current IR (A)
Forward current IF (A)
10–3
10–5
10–6
10–7
10–6
10–7
10–8
10–8
10–9
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
200
250
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
10–9
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.3.00 Feb 16, 2005 page 3 of 4
HSU83
Package Dimensions
JEITA Package Code
RENESAS Code
Previous Code
MASS[Typ.]
SC-76A
PTSP0002ZA-A
URP / URPV
0.004g
D
b
E HE
l1
e1
A2
A1
Symbol
l1
b2
Pattern of terminal position areas
Rev.3.00 Feb 16, 2005 page 4 of 4
Reference
A1
A2
b
D
E
HE
b2
e1
l1
Dimension in Millimeters
Min
0
0.75
0.15
1.10
1.55
2.35
-
Nom
0.90
0.30
1.25
1.70
2.50
0.80
2.30
0.80
Max
0.1
1.05
0.45
1.40
1.85
2.65
-
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