2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 (Previous ADE-208-1046) Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 8 Symbol VCBO VCEO VEBO IC PC Tj 2SC460 30 30 5 100 200 150 2SC461 30 30 5 100 200 150 Unit V V V mA mW °C Tstg –55 to +150 –55 to +150 °C 2SC460, 2SC461 Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO Min 30 2SC460 Typ — Collector to emitter breakdown voltage V(BR)CEO 30 — — 30 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Base to emitter voltage DC current transfer ratio V(BR)EBO 5 — — 5 — — V IE = 10 µA, IC = 0 ICBO IEBO VBE hFE*1 VCE(sat) — — 0.63 — 0.6 0.5 0.5 0.75 200 1.1 — — — 35 — — — 0.63 — 0.6 0.5 0.5 0.75 200 1.1 µA µA V Collector to emitter saturation voltage Gain bandwidth product — — — 100 — VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA 230 1.8 — 3.5 — — 230 1.8 — 3.5 MHz pF Item Symbol fT Max — Min 30 2SC461 Typ Max — — Unit V V Test conditions IC = 10 µA, IE = 0 Collector output capacitance 10.7 MHz power gain Cob — — VCE = 12 V, IC = 2 mA PG 26 29 — — — — dB VCE = 6 V, IE = –1 mA f = 10.7 MHz 100 MHz power gain PG — — — 13 17 — dB VCE = 6 V, IE = –1 mA f = 100 MHz Noise figure NF — 2.0 — — — — dB VCE = 6 V, IE = –1 mA f = 1MHz Rg = 500Ω VCB = 10 V, IE = 0, f = 1 MHz Note: 1. The 2SC461 is grouped by hFE as follows. B C 60 to 120 100 to 200 Small Signal y Parameters (VCE = 6 V, IC = 1 mA, Emitter Common) Item Input admittance Symbol yie Reverse transfer admittance yre Forward transfer admittance yfe Output admittance yoe Rev.2.00 Aug 10, 2005 page 2 of 8 f 455 kHz 4.5 MHz 10.7 MHz 100 MHz 455 kHz 4.5 MHz 10.7 MHz 100 MHz 455 kHz 2SC460A, 2S461A 0.58 + j0.074 0.65 + j0.79 0.91 + j2.0 7.4 + j14 –j0.003 –j0.04 –j0.13 –j1.0 38 – j0.1 2SC460B, 2SC461B 0.42 + j0.068 0.50 + j0.7 0.61 + j1.9 5.6 + j12 –j0.003 –j0.04 –j0.13 –j1.0 37 – j0.1 2SC460C, 2SC461C 0.30 + j0.051 0.35 + j0.57 0.39 + j1.3 3.8 + j6.0 –j0.003 –j0.04 –j0.13 –j1.0 37 – j0.2 4.5 MHz 10.7 MHz 100 MHz 455 kHz 4.5 MHz 10.7 MHz 100 MHz 35 – j1.0 34 – j2.5 28 – j20 0.0098 + j0.009 0.02 + j0.09 0.11 + j0.4 0.40 + j1.7 35 – j1.2 34 – j2.5 28 – j19 0.013 + j0.009 0.023 + j0.092 0.11 + j0.4 0.50 + j2.0 34 – j1.8 33 – j4.5 20 – j19 0.016 + j0.012 0.03 + j0.10 0.12 + j0.4 0.83 + j2.0 Unit mS mS mS mS 2SC460, 2SC461 Main Characteristics Typical Output Characteristics 10 250 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 200 150 100 50 80 8 60 6 4 40 2 20 µA IB = 0 50 0 100 4 0 150 12 16 20 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 100 DC Current Transfer Ratio hFE VCE = 6 V 8 6 4 2 0.2 0 0.4 0.6 0.8 80 60 20 0 0.1 1.0 3 1.0 10 30 Noise Figure vs. Signal Source Resistance 24 5 Noise Figure NF (dB) VCE = 6 V Rg = 500 Ω f = 1.0 MHz 3 2 1 0 0.2 0.3 Collector Current IC (mA) Noise Figure vs. Collector Current 4 VCE = 6 V 40 Base to Emitter Voltage VBE (V) Noise Figure NF (dB) 8 Ambient Temperature Ta (°C) 10 Collector Current IC (mA) 100 0.5 1.0 2 5 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 8 10 20 VCE = 6 V Rg = 500 Ω f = 100 MHz 16 12 8 4 0 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 2SC460, 2SC461 Gain Bandwidth Product vs. Collector Current Noise Figure vs. Signal Source Resistance Gain Bandwidth Product fT (MHz) Noise Figure NF (dB) 12 VCE = 6 V IC = 1 mA f = 100 MHz 10 8 6 4 2 0 10 20 50 100 200 500 1000 500 VCE = 6 V 400 300 200 100 0 0.1 0.3 IC = 1 mA 300 200 100 0 Percentage of Relative to IE = 1 mA (%) 10 20 30 500 IC = 1 mA f = 455 kHz boe 200 goe bie gie 100 gie bie goe 50 boe 20 10 1 2 5 10 20 50 Collector to Emitter Volgage VCE (V) Collector to Emitter Voltage VCE (V) Input/Output Admittance vs. Collector Current Transfer Admittance vs. Collector to Emitter Voltage 500 goe gie VCE = 6 V f = 455 kHz 200 bie 100 boe boe 50 Percentage of Relative to VCE = 6 V (%) 400 5 10 Input/Output Admittance vs. Collector to Emitter Voltage bie gie 20 10 0.1 goe 0.2 0.5 1.0 2 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 8 5 Percentage of Relative to VCE = 6 V (%) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector to Emitter Voltage 2 3 Collector Current IC (mA) Signal Source Resistance Rg (Ω) 1 1.0 500 IC = 1 mA f = 455 kHz 200 bre bfe 100 g fe gfe bfe bre 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 2SC460, 2SC461 Input/Output Admittance vs. Collector to Emitter Voltage VCE = 6 V f = 455 kHz bfe gfe 200 bre 50 20 gfe bfe 10 0.1 0.2 0.5 1.0 2 5 goe gie bie boe boe bie gie goe 10 0.1 0.2 0.5 1.0 2 5 bie goe boe 50 20 10 1 2 5 10 20 50 500 IC = 1 mA f = 4.5 MHz 200 bre bfe 100 bre gfe bfe gfe 50 20 10 1 2 5 10 20 50 Transfer Admittance vs. Collector Current Input/Output Admittance vs. Collector to Emitter Voltage bfe gfe 200 bre bre 50 gfe bfe 10 0.1 gie bie gie Collector to Emitter Voltage VCE (V) VCE = 6 V f = 4.5 MHz 20 100 Collector Current IC (mA) 500 100 goe Transfer Admittance vs. Collector to Emitter Voltage 200 20 200 Input/Output Admittance vs. Collector Current VCE = 6 V f = 4.5 MHz 50 IC = 1 mA f = 4.5 MHz boe Collector to Emitter Voltage VCE (V) 500 100 500 Collector Current IC (mA) Percentage of Relative to VCE = 6 V (%) 100 bre Percentage of Relative to VCE = 6 V (%) 500 0.2 0.5 1.0 2 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 5 of 8 5 Percentage of Relative to VCE = 6 V (%) Percentage of Relative to IC = 1 mA (%) Percentage of Relative to IC = 1 mA (%) Percentage of Relative to IC = 1 mA (%) Transfer Admittance vs. Collector Current 500 IC = 1 mA f = 10.7 MHz 200 goe 100 boe gie gie bie bie goe boe 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 2SC460, 2SC461 500 VCE = 6 V f = 10.7 MHz 200 bie boe bie 50 boe gie goe 20 10 0.1 0.2 0.5 1.0 2 5 bfe gfe bre bre gfe bfe 10 0.1 0.2 0.5 1.0 2 5 20 10 1 2 5 10 20 50 500 200 goe b oe 100 gie IC = 1 mA f = 100 MHz gie bie bie goe boe 50 20 10 1 2 5 10 20 50 Transfer Admittance vs. Collector to Emitter Voltage goe bie boe gie boe bie gie goe 10 0.1 50 Input/Output Admittance vs. Collector Current 200 20 bfe gie bre gie Collector to Emitter Voltage VCE (V) VCE = 6 V f = 100 MHz 50 100 Collector Current IC (mA) 500 100 bre bfe Input/Output Admittance vs. Collector to Emitter Voltage 50 20 200 Transfer Admittance vs. Collector Current VCE = 6 V f = 10.7 MHz 100 IC = 1 mA f = 10.7 MHz Collector to Emitter Voltage VCE (V) 500 200 500 Collector Current IC (mA) Percentage of Relative to VCE = 6 V (%) 100 goe gie Percentage of Relative to VCE = 6 V (%) Transfer Admittance vs. Collector to Emitter Voltage 0.2 0.5 1.0 2 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 6 of 8 5 Percentage of Relative to VCE = 6 V (%) Percentage of Relative to IC = 1 mA (%) Percentage of Relative to IC = 1 mA (%) Percentage of Relative to IC = 1 mA (%) Input/Output Admittance vs. Collector Current 500 IC = 1 mA f = 100 MHz 200 bre gfe 100 bfe gfe bre bfe 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 2SC460, 2SC461 Percentage of Relative to IC = 1 mA (%) Transfer Admittance vs. Collector Current 500 VCE = 6 V f = 100 MHz 200 100 bfe gfe bre bre 50 gfe 20 bfe 10 0.1 0.2 0.5 1.0 2 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 7 of 8 5 2SC460, 2SC461 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-43A PRSS0003DA-C TO-92(2) / TO-92(2)V 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.5 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC460CTZ 2SC461BTZ 2SC461CTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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