2SC535 Silicon NPN Epitaxial Planar REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 Application VHF amplifier, mixer, local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 7 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C 2SC535 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 VBE VCE(sat) fT Cob PG Min 30 20 4 — 60 — — 450 — 17 Typ — — — — — 0.72 0.17 940 0.9 20 Max — — — 0.5 200 — — — 1.2 — V V MHz pF dB Noise figure NF — 3.5 5.5 dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 Ω Input admittance (typ) yie 1.3 + j5.3 mS VCE = 6 V, IC = 1 mA, f = 100 MHz –0.078 – j0.41 32 – j10 0.08 + j0.82 mS mS mS Reverse transfer admittance (typ) yre Forward transfer admittance (typ) yfe Output admittance (typ) yoe Note: 1. The 2SC535 is grouped by hFE as follows. B C 60 to 120 100 to 200 Rev.2.00 Aug 10, 2005 page 2 of 7 Unit V V V µA Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 1 mA IC = 20 mA, IB =4 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz 2SC535 Main Characteristics Typical Output Characteristics 150 20 Collector Current IC (mA) Collector power dissipation PC (mW) Maximum Collector Dissipation Curve 100 50 300 275 250 225 200 175 150 125 100 16 12 P 50 4 00 mW 25 µA 0 50 100 150 0 8 4 12 20 16 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 120 5 50 DC Current Transfer ratio hFE Collector Current IC (mA) =1 IB = 0 Ambient Tmperature Ta (°C) 40 4 30 3 2 20 1 10µA IB = 0 0 4 8 12 16 VCE = 6 V 100 80 60 40 20 0 0.1 20 Collector to Emitter Voltage VCE (V) 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) Typical Transfer Cahracteristics (2) Typical Transfer Cahracteristics (1) 20 5 VCE = 6 V Collector Current IC (mA) Collector Current IC (mA) C 75 8 16 12 8 4 0 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) Rev.2.00 Aug 10, 2005 page 3 of 7 VCE = 6 V 4 3 2 1 0 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) 20 2SC535 Gain Bandwidth Product vs. Collector Current 1.5 f = 1 MHz IE = 0 1.3 Gain Bandwidth Product fT (MHz) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1.1 0.9 0.7 0.5 0.3 1.0 10 3 30 1,000 VCE = 6 V 800 600 400 200 0 0.1 0.2 Noise Figure vs. Collector Current Noise figure NF (dB) Noise figure NF (dB) 2 0.5 1.0 2 5 10 4 2 0 20 Noise figure NF (dB) 50 100 200 300 p D.U.T. 500 VEE 0 10 20 Collecter to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 4 of 7 OUT Rl = 550 Ω 0.01 µ 0.01 µ 2 0.1 µ 10 p max 3k 5 1,000 Signal Source Resistance Rg (Ω) IN f = 100 MHz Rg = 100 Ω 4 2 500 100 MHz Power Gain Test Circuit VCE = 6 V f = 100 MHz Rg = 50 Ω 1 20 6 Noise Figure vs. Collector to Emitter Voltage 6 10 VCE = 6 V IC = 1 mA f = 100 MHz Collector Current IC (mA) 8 5 8 4 0 0.2 2 Noise Figure vs. Signal Source Resistance IC = 1 mA f = 100 MHz Rg = 50 Ω 6 1.0 Collector Current IC (mA) Collector to Base Voltage VCB (V) 8 0.5 0.01 µ VCC Unit R : Ω C:F 2SC535 Input Admittance Characteristics –0.20 –0.16 –0.12 –0.08 –0.04 Input Suceptance bie (mS) 18 yie = gie + jbie VCE = 6 V 16 yre = gre + jbre VCE = 6 V 0 f = 50 MHz 14 –0.2 70 12 150 10 f = 200 MHz 8 150 200 100 –0.4 100 70 150 50 MHz 5 mA –0.6 6 100 70 3 mA 4 2 mA 2 50 IC = 1 mA 200 –0.8 IC = 5 mA 3 2 1 –1.0 0 2 4 6 10 12 14 16 18 8 Input Conductance gie (mS) 0 –20 20 40 60 80 2.4 yfe = gfe + jbfe VCE = 6 V IC = 1 mA 2 mA –40 f = 50 MHz 3 mA –60 70 –80 5 mA 200 –100 150 Output Admittance Characteristics 100 120 100 –120 Output Suceptance boe (mS) Forward Transfer Suceptance bfe (mS) Forward Transfer Admittance Characteristics Forward Transfer Conductance gfe (mS) 2.0 1.6 yoe = goe + jboe VCE = 6 V IC = 1 mA 2 5 3 f = 200 MHz 1.2 150 100 0.8 70 0.4 0 50 0.1 0.2 0.3 0.4 0.5 0.6 Output Conductance goe (mS) Input Admittance vs. Collector to Emitter Voltage Input Admittance vs. Collector Current 20 Input Admittance yie (mS) Input Admittance yie (mS) 10 bie 5 yie = gie + jbie IC = 1 mA f = 100 MHz 2 gie 1.0 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 7 10 yie = gie + jbie VCE = 6 V f = 100 MHz 5 bie 2 1.0 0.5 0.2 0.1 gie 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Reverse Transfer Suceptance bre (mS) Reverse Transfer Admittance Characteristics Reverse Transfer Conductance gre (mS) 2SC535 –0.05 bre yre = gre + jbre IC = 1 mA f = 100 MHz –0.2 –0.02 –0.1 –0.01 gre –0.005 –0.05 1 2 5 10 20 –0.1 –1.0 bre –0.5 yre = gre + jbre VCE = 6 V f = 100 MHz –0.2 –0.1 –0.05 –0.02 gre –0.01 –0.05 –0.005 –0.02 –0.002 –0.01 0.1 –0.001 0.2 0.5 1.0 2 5 Collector Current IC (mA) Forward Transfer Admittance vs. Collector to Emitter Voltage Forward Transrer Admittance vs. Collector Current Forward Transrer Admittance yie (mS) Collector to Emitter Voltage VCE (V) 100 yfe = gfe + jbfe IC = 1 mA f = 100 MHz 50 gfe 20 –bfe 10 5 1 2 5 10 20 100 50 10 yfe = gfe + jbfe VCE = 6 V f = 100 MHz 20 –bfe gfe 10 5 2 1 0.1 0.2 0.5 1.0 2 5 10 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Output Admittance vs. Collector to Emitter Voltage Output Admittance vs. Collector Current 2.0 goe 0.1 1.0 boe 0.05 0.5 yeo = goe + jboe IC = 1 mA f = 100 MHz 0.02 0.2 0.1 1 2 5 10 0.01 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 6 of 7 Output Admittance yoe (mS) 0.2 boe 1.0 0.5 0.2 0.1 goe 0.05 0.02 0.1 yoe = goe + jboe VCE = 6 V f = 100 MHz 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Reverse Transfer Conductance gre (mS) –5 Reverse Transfer Suceptance bre (mS) –0.1 Reverse Transfer Conductance gre (mS) –1.0 2.0 Output Suceptance boe (mS) Reverse Transrer Admittance vs. Collector Current Output Conductance goe (mS) Forward Transfer Admittance yie (mS) Reverse Transfer Suceptance bre (mS) Reverse Transfer Admittance vs. Collector to Emitter Voltage 2SC535 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-43A PRSS0003DA-C TO-92(2) / TO-92(2)V 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.5 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC535BTZ 2SC535CTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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