2SD667, 2SD667A Silicon NPN Epitaxial REJ03G0769-0200 (Previous ADE-208-1137) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Symbol VCBO VCEO VEBO IC iC(peak) 2SD667 120 80 5 1 2 2SD667A 120 100 5 1 2 Unit V V V A A Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 0.9 150 –55 to +150 0.9 150 –50 to +150 W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD667, 2SD667A Electrical Characteristics (Ta = 25°C) Item Symbol 2SD667 Typ Max — — 2SD667A Min Typ Max 120 — — Collector to base breakdown voltage V(BR)CBO Min 120 Collector to emitter breakdown voltage V(BR)CEO 80 — — 100 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO 5 — — 5 — — V IE = 10 µA, IC = 0 ICBO hFE1*1 — 60 — — 10 320 — 60 — — 10 200 µA VCB = 100 V, IE = 0 hFE2 30 — — 30 — — Collector to emitter saturation voltage Base to emitter voltage VCE(sat) — — 1 — — 1 V IC = 500 mA, 2 IB = 50 mA* VBE — — 1.5 — — 1.5 V VCE = 5 V, 2 IC = 150 mA* Gain bandwidth product fT — 140 — — 140 — MHz VCE = 5 V, 2 IC = 150 mA* 12 — pF Cob — 12 — — Collector output capacitance Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows. 2. Pulse test B C D 2SD667 60 to 120 100 to 200 160 to 320 2SD667A 60 to 120 100 to 200 Rev.2.00 Aug 10, 2005 page 2 of 5 Unit V Test conditions IC = 10 µA, IE = 0 VCE = 5 V, 2 IC = 150 mA* VCE = 5 V, 2 IC = 500 mA* VCB = 10 V, IE = 0, f = 1 MHz 2SD667, 2SD667A Main Characteristics Typical Output Characteristics Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve 1.0 Collector Current IC (A) 1.2 0.8 0.4 35 30 25 20 15 0.8 10 0.6 5 0.4 P C .9 0.2 50 0 150 100 2 DC Current Transfer Ratio hFE 5°C 100 50 20 25 –25 Ta = 7 Collector Current IC (mA) 200 10 5 2 1 VCE = 5 V °C Ta = 75 250 25 200 –25 150 100 50 0.2 0.4 0.8 0.6 1.0 1 1.2 IC = 10 IB Pulse Ta VBE(sat) 0.8 °C = –25 25 75 0.6 0.4 0.2 75 5 2 °C –25 = Ta VCE(sat) 0 1 3 10 30 100 300 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 10 30 100 300 1,000 Gain Bandwidth Product vs. Collector Current Saturation Voltage vs. Collector Current 1.0 3 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Voltage VBE (V) 0 10 0 0 0.1 8 300 VCE = 5 V 0.2 6 DC Current Transfer Ratio vs. Collector Current 500 0.3 4 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 0.4 1 0.5mA Ambient Temperature Ta (°C) 0.5 W IB = 0 0 0.6 2 =0 1,000 240 VCE = 5 V 200 160 120 80 40 0 10 30 100 300 Collector Current IC (mA) 1,000 2SD667, 2SD667A Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD667, 2SD667A Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD667BTZ-E 2SD667CTZ-E 2SD667DTZ-E 2SD667ABTZ-E 2SD667ACTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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