2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial REJ03G0699-0300 (Previous ADE-208-1067A) Rev.3.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2545 60 60 5 100 –100 400 150 –55 to +150 2SC2546 90 90 5 100 –100 400 150 –55 to +150 2SC2547 120 120 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2SC2545, 2SC2546, 2SC2547 Electrical Characteristics (Ta = 25°C) 2SC2545 2SC2546 2SC2547 Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO 60 — — 90 — — 120 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 60 — — 90 — — 120 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — 5 — — V IE = 10 µA, IC = 0 ICBO — — 0.1 — — 0.1 — — 0.1 VCB = 50 V, IE = 0 0.1 — 0.1 — µA µA Collector cutoff current Emitter cutoff current IEBO — — DC current transfer ratio hFE*1 250 — — 0.1 — 800 Collector to emitter saturation voltage VCE(sat) — — 0.2 — — 0.2 — — 0.2 V IC = 10 mA, IB = 1 mA Base to emitter voltage VBE — 0.6 — — 0.6 — — 0.6 — V VCE = 12 V, IC = 2 mA Gain bandwidth product fT — 90 — — 90 — — 90 — MHz VCE = 12 V, IC = 2 mA Collector output capacitance Cob — 3.0 — — 3.0 — — 3.0 — pF Noise voltage referred input en — 0.5 — — 0.5 — — 0.5 — nV/ √Hz 1200 600 — Test conditions — 1200 250 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6V, IC = 10 mA, f = 1 kHz, Rg = 0, ∆f = 1Hz Note: 1. The 2SC2545 and 2SC2547 are grouped by hFE as follows. D E F 2SC2545 — 400 to 800 600 to 1200 2SC2547 250 to 500 400 to 800 — Rev.3.00 Aug 10, 2005 page 2 of 5 2SC2545, 2SC2546, 2SC2547 Main Characteristics Typical Output Characteristics 50 600 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 200 70 60 40 50 30 =0 .4 W 20 10 10 µA IB = 0 0 100 50 150 4 0 20 Collector Current IC (mA) VCE = 12 V 15 8 10 5 µA 4 IB = 0 4 0 5 2 1.0 0.5 0.2 0.1 8 12 16 0 20 Collector to Emitter Voltage VCE (V) 5,000 VCE = 12 V Pulse 2,000 1,000 500 200 100 0.5 1.0 2 5 10 20 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 50 100 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current 50 0.1 0.2 20 10 20 12 16 Typical Transfer Characteristics 25 16 12 8 Collector to Emitter Voltage VCE (V) Typical Output Characteristics Collector Current IC (mA) C 30 20 Ambient Temperature Ta (°C) DC Current Transfer Ratio hFE P 40 Collector to Emitter Saturation Voltage vs. Collector Current 1.0 IC = 10 IB 0.5 0.2 0.1 0.05 0.02 0.01 1 2 5 10 20 50 Collector Current IC (mA) 100 Base to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current 10 Gain Bandwidth Product fT (MHz) Base to Emitter Saturation Voltage VBE(sat) (V) 2SC2545, 2SC2546, 2SC2547 IC = 10 IB 5 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 2,000 500 200 100 50 20 100 1 Collector Current IC (mA) Signal Source Resistance Rg (kΩ) 20 10 5 2 2 5 10 20 50 100 30 V = 6 V CE f = 1 kHz 10 3 1.0 NF = 0.5 dB 0.3 1 2 0.1 4 0.03 6 10 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 100 Contours of Constant Noise Figure VCE = 6 V f = 120 Hz 10 3 1.0 NF = 0.5 dB 0.03 100 Contours of Constant Noise Figure 30 0.1 50 20 Collector Current IC (mA) 100 0.3 10 Collector to Base Voltage VCB (V) 1 2 4 6 10 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 5 100 Signal Source Resistance Rg (kΩ) Collector Output Capacitance Cob (pF) Signal Source Resistance Rg (kΩ) IE = 0 f = 1 MHz 1.0 5 Contours of Constant Noise Figure 100 1 0.5 2 Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage 50 VCE = 12 V 1,000 100 VCE = 6 V f = 10 Hz 30 10 3 1.0 0.3 NF = 0.5 dB 1 2 4 6 10 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 10 30 Collector Current IC (mA) 100 2SC2545, 2SC2546, 2SC2547 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC2545ETZ-E 2SC2545FTZ-E 2SC2546FTZ-E 2SC2547ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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