2SB831 Silicon PNP Epitaxial REJ03G0653-0200 (Previous ADE-208-1033) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.7 –1 150 150 –55 to +150 Unit V V V A A mW °C °C 2SB831 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Notes: 1. The 2SB831 is grouped by hFE as follows. 2. Pulse test Grade B C Mark BB BC hFE 85 to 170 120 to 240 Rev.2.00 Aug 10, 2005 page 2 of 5 Min –25 –20 –5 — 85 — — Typ — — — — — — — Max — — — –1.0 240 –0.5 –1.0 Unit V V V µA V V Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, IC = –0.15 A*2 IC = –0.5 A, IB = –0.05 A*2 VCE = –1 V, IC = –0.15 A*2 2SB831 Main Characteristics Typical Output Characteristics –500 150 Collector current IC (mA) 100 50 –2.0 –300 –1.5 –1.0 –200 –0.5 mA –100 IB = 0 0 50 100 150 0 –0.4 –1.2 –1.6 –2.0 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 3,000 DC Current transfer ratio hFE –300 VCE = –1 V –100 –30 Ta = 75°C 25°C –10 –3 –1 0 –0.2 –0.4 –0.6 300 Ta = 75°C 25°C 100 30 10 –1 –1.0 –0.8 VCE = –1 V Pulse 1,000 –3 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB –0.3 –0.2 Ta = 75°C 25°C –0.1 0 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 –1.0 –0.8 IC = –300 mA –0.4 –30 –100 –300 Collector to Emitter Saturation Voltage vs. Base Current Collector to emitter saturation voltage VCE(sat) (V) –0.5 –10 Collector Current IC (mA) Base to Emitter Voltage VBE (V) Collector to emitter saturation voltage VCE(sat) (V) –0.8 Ambient Temperature Ta (°C) –1,000 Collector current IC (mA) –2.5 –400 –500 mA Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve –0.6 –0.4 –0.2 0 –1 –3 –10 –30 Base Current IB (mA) –100 –1,000 2SB831 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 500 200 f = 1 MHz IE = 0 100 50 20 10 5 –0.5 –1.0 –2 –5 –10 –20 –50 Collector Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB831 Package Dimensions JEITA Package Code RENESAS Code SC-59A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SB831BBTL-E 2SB831BCTL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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