2SB1048 Silicon PNP Epitaxial, Darlington REJ03G0665-0200 (Previous ADE-208-1040) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2,4 2 4 1 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 Note: Marking is “BT” *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings –60 –60 –7 –1 –2 1 150 Unit V V V A A W °C –55 to +150 °C 2SB1048 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) Min –60 –60 — — 2000 — — Typ — — — — — — — Max — — –10 –10 100000 –2.0 –2.0 Unit V V µA µA V V Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IE = 0 VCE = –3 V, IC = –500 mA*1 IC = –500 mA, IB = –1 mA*1 IC = –500 mA, IB = –1 mA*1 2SB1048 Main Characteristics Area of Safe Operation –10 0 50 –10 –30 –100 –300 –1 –0.1 m –0.04 m –0.02 m –0.2 –0.01 m –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Saturation Voltage vs. Collector Current –10 –3 VBE (sat) VCE (sat) Ta = 25°C IC/IB = 500 –0.3 –30 –100 –300 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 –1,000 DC Current Transfer Ratio hFE 100,000 m m .6 m –0.2 W Collector Current IC (A) PC = 1 –0 IB = 0 A Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) –0.03 DC Current Transfer Ratio vs. Collector Current –0.4 –0.1 –10 –0.1 Typical Output Characteristics –0.6 –1.0 ms Collector to Emitter Voltage VCE (V) Ta = 25°C 0 10 Ta = 25°C 1 Shot Pulse –0.01 –3 150 = Ambient Temperature Ta (°C) –1.0 –0.8 100 –0.3 s 0.4 PW –1.0 s 0.8 –3 iC (peak) 1µ Collector Current IC (A) 1.2 1m Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 30,000 Ta = 75°C 10,000 VCE = –3 V Pulse 25 –25 3,000 1,000 300 100 –30 –100 –300 –1,000 Collector Current IC (mA) –3,000 2SB1048 Transient Thermal Resistance Thermal Resistance θj-a (°C/W) 300 100 30 10 3 Ta = 25°C Mounted on the Alumina Ceramic Board (12.5 × 30 × 0.7 mm) 1.0 0.3 1m 10 m 100 m 1 Time t (s) Rev.2.00 Aug 10, 2005 page 4 of 5 10 100 1,000 2SB1048 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SB1048BTTR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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