2SD1470 Silicon NPN Epitaxial, Darlington REJ03G0791-0200 (Previous ADE-208-1153) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 2 4 1 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 Note: Marking is “AT”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings 60 60 7 1 2 1 150 Unit V V V A A W °C –55 to +150 °C 2SD1470 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Min 60 60 7 — — 2000 — — Typ — — — — — — — — Max — — — 10 10 100000 1.5 2.0 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A*1 IC = 500 mA, IB = 0.5 mA*1 IC = 500 mA, IB = 0.5 mA*1 2SD1470 Main Characteristics Area of Safe Operation 10 0.3 Ta = 25°C 1Shot Pulse 0.1 0.03 100 1,000 DC Current Transfer Ratio vs. Collector Current PC 20 18 16 14 12 10 8 =1 W 6 4 0.2 2 µA 0.1 IB = 0 1 2 4 3 5 Collectot to Emitter Voltage VCE (V) Saturation Voltage vs. Collector Curret 10 3 VBE(sat) VCE(sat) 0.3 Ta = 25°C IC/IB = 1,000 30 100 300 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 1,000 3 DC Current Transfer Ratio hFE (×10 ) Typical Output Characteristics 0.3 0.1 10 30 Collector to Emitter Voltage VCE (V) 0.4 1.0 10 Ambient Temperature Ta (°C) Ta = 25°C 0 3 150 100 0.5 Collector Current IC (A) 1.0 0.01 50 0 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) µs 0.4 iC(peak) 1 0.8 3 µs 0 s s 10 1 m m 10 = Collector Current IC (A) 1.2 PW Collector Power Dissipation PC (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 300 100 Ta = 75°C 25 –25 30 VCE = 3 V Pulse 10 3 10 30 100 300 Collector Current IC (mA) 1,000 2SD1470 Transient Thermal Resistance Thermal Resistance θj-a (°C/W) 300 100 30 10 3 Ta = 25°C On the alumina ceramic board(12.5 × 30 × 0.7 mm) 1.0 0.3 1m 10 m 100 m 1 Time t (s) Rev.2.00 Aug 10, 2005 page 4 of 5 10 100 1,000 2SD1470 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SD1470ATTR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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