TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 (0) 3136 500 0 e-Mail: [email protected] Please visit our website at www.ams.com TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER r r TAOS033E − SEPTEMBER 2007 D Integral Visible Light Cutoff Filter D Converts IR Light Intensity to Output D D PACKAGE SM SURFACE MOUNT SIDELOOKER (FRONT VIEW) Voltage Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components High Sensitivity Single Voltage Supply Operation (2.7 V to 5.5 V) al id D PACKAGE S SIDELOOKER (FRONT VIEW) D Low Noise (200 μVrms Typ to 1 kHz) D Rail-to-Rail Output D High Power-Supply Rejection (35 dB at lv 2 VDD 3 OUT am lc s on A te G nt st il D D 1 GND 1 kHz) Compact 3-Leaded Plastic Package RoHS Compliant (−LF Package Only) 1 GND Description 2 VDD 3 OUT The TSL267 is a high-sensitivity low-noise infrared light-to-voltage converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to IR light intensity (irradiance) on the photodiode. The TSL267 has a transimpedance gain of 320 MΩ. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead visible-light-blocking plastic sidelooker package with an integral lens. Available Options DEVICE TA TSL267 0°C to 70°C TSL267 0°C to 70°C TSL267 0°C to 70°C PACKAGE − LEADS PACKAGE DESIGNATOR ORDERING NUMBER 3-lead Sidelooker S TSL267 3-lead Sidelooker — Lead (Pb) Free S TSL267−LF 3-lead Surface-Mount Sidelooker — Lead (Pb) Free SM TSL267SM−LF ch ni ca Functional Block Diagram − Voltage Output + Terminal Functions Te TERMINAL NAME DESCRIPTION NO. GND 1 Ground (substrate). All voltages are referenced to GND. OUT 3 Output voltage VDD 2 Supply voltage The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. r Texas Advanced Optoelectronic Solutions Inc. 1001 Klein Road S Suite 300 S Plano, TX 75074 S (972) r 673-0759 www.taosinc.com 1 TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)† al id Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) . . . . . . . . . . . . . . . . . . . . 260°C Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. MIN MAX 2.7 5.5 am lc s on A te G nt st il Supply voltage, VDD lv Recommended Operating Conditions Operating free-air temperature, TA 0 UNIT V 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 940 nm, RL = 10 kΩ (unless otherwise noted) (see Notes 2, 3, and 4) PARAMETER VD Dark voltage TEST CONDITIONS MIN Ee = 0 TYP 0 VDD = 4.5 V, No Load VDD = 4.5 V, RL = 10 kΩ MAX 15 4.49 UNIT mV VOM Maximum output voltage swing VO Output voltage αVD TA = 0°C to 70°C −15 μV/°C Ne Temperature coefficient of dark voltage (VD) Irradiance responsivity See Note 5 0.45 V/(μW/cm2) PSRR Power supply pp y rejection j ratio fac = 100 Hz, see Note 6 IDD Supply current Ee = 4.4 μW/cm2 1.2 4.2 2 2.8 55 fac = 1 kHz, see Note 6 35 Ee = 4.4 μW/cm2 1.9 4 V V dB dB mA Measured with RL = 10 kΩ between output and ground. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. The input irradiance is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength λp = 940 nm. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 6. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V. Te ch ni ca NOTES: 2. 3. 4. 5. 4 Copyright E 2007, TAOS Inc. 2 The LUMENOLOGY r Company r www.taosinc.com r TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 940 nm, RL = 10 kΩ (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tr Output pulse rise time, 10% to 90% of final value See Note 7 and Figure 1 160 250 μs tf Output pulse fall time, 10% to 90% of final value See Note 7 and Figure 1 150 250 μs ts Output settling time to 1% of final value See Note 7 and Figure 1 330 μs Integrated noise voltage f = dc to 1 kHz Ee = 0 200 μVrms f = 10 Hz Ee = 0 6 f = 100 Hz Ee = 0 6 f = 1 kHz Ee = 0 7 Output p noise voltage, g , rms μV/√Hz μ / rms al id Vn lv NOTE 7: Switching characteristics apply over the range VO = 0.1 V to 4.5 V. PARAMETER MEASUREMENT INFORMATION am lc s on A te G nt st il VDD Pulse Generator Ee 2 LED (see Note A) Input − 3 + 90% RL TSL267 1 tf tr Output Output (see Note B) 10% 90% 10% VOLTAGE WAVEFORM TEST CIRCUIT NOTES: A. The input irradiance is supplied by a pulsed GaAs light-emitting diode with peak wavelength: λp = 940 nm, tr < 1 μs, tf < 1 μs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF. Te ch ni ca Figure 1. Switching Times The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. r www.taosinc.com r 3 TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION RATIO vs FREQUENCY PHOTODIODE SPECTRAL RESPONSIVITY 80 Normalized to 940 nm 1.2 1.0 0.8 0.6 0.4 0.2 60 50 40 30 20 am lc s on A te G nt st il Relative Responsivity 70 Power Supply Rejection Ratio — dB 1.4 al id TA = 25°C lv 1.6 10 0 700 800 900 1000 λ − Wavelength − nm 0 1100 102 10 Figure 2 ca 5 ni 4 3 0 10 Copyright E 2007, TAOS Inc. 4 0.6 0.5 0.4 0.3 0.1 20 30 40 50 60 TA − Free-Air Temperature − °C Te 0 0.7 0.2 ch V D− Dark Voltage − mV 6 Normalized Response 0.8 7 1 NORMALIZED RESPONSE vs ANGULAR DISPLACEMENT 0.9 8 2 106 1.0 VDD = 5 V 9 105 Figure 3 DARK VOLTAGE vs FREE-AIR TEMPERATURE 10 103 104 f − Frequency − Hz 70 0 −90 −70 −50 −30 −10 10 30 50 Angular Displacement − 5 Figure 4 70 90 Figure 5 The LUMENOLOGY r Company r www.taosinc.com r TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 APPLICATION INFORMATION PCB Pad Layout Suggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 6. 1.0 1.0 al id 1.0 1.0 am lc s on A te G nt st il 1.0 lv 3.2 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. Te ch ni ca Figure 6. Suggested SM Package PCB Layout The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. r www.taosinc.com r 5 TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 MECHANICAL DATA The device is supplied in a visible light-blocking plastic three-lead through-hole sidelooker package (S). PACKAGE S PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE TOP VIEW 1.64 FRONT VIEW lv R 0.90 am lc s on A te G nt st il 2.60 al id 4.60 SIDE VIEW 2.30 0.15 Note B 1.80 4.60 1 1.56 0.42 Pb Lead Free Available ch 2y2 ni ca 14.86 + 0.50 0.47 TYP 0.42 Te NOTES: A. All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated. B. Dimension is to center of lens arc, which is located below the package face. C. The integrated photodiode active area is round with a typical diameter of 0.75 mm and is typically located in the center of the lens and 0.97 mm below the top of the lens surface. D. Lead finish for TSL267: solder dipped, 63% Sn/37% Pb. Lead finish for TSL267−LF: solder dipped, 100% Sn.. E. This drawing is subject to change without notice. Figure 7. Package S — Single-In-Line Side-Looker Package Configuration Copyright E 2007, TAOS Inc. 6 The LUMENOLOGY r Company r www.taosinc.com r TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 MECHANICAL DATA PACKAGE SM PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGE TOP VIEW FRONT VIEW lv R 0.90 1.64 am lc s on A te G nt st il 2.60 al id 4.60 SIDE VIEW 0.15 Note B 2.30 1.80 4.60 0.62 + 0.10 0.62 +0.10 −0.15 5.73 + 0.50 Pb ch 2y2 0.47 TYP 0.42 Lead Free All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated. Dimension is to center of lens arc, which is located below the package face. The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface. Index of refraction of clear plastic is 1.55. Lead finish for TSL267SM−LF: solder dipped, 100% Sn. This drawing is subject to change without notice. Te NOTES: A. B. C. D. E. F. 2.59 0.42 ni ca 1.00 1.97 Figure 8. Package SM — Surface Mount Side-Looker Package Configuration The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. r www.taosinc.com r 7 TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. LEAD-FREE (Pb-FREE) and GREEN STATEMENT al id Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material). am lc s on A te G nt st il lv Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ca TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK. Te ch ni LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated. Copyright E 2007, TAOS Inc. 8 The LUMENOLOGY r Company r www.taosinc.com r