T-PM J-Series CT300DJH060 Data

TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
CT300DJH060
FEATURE
•IC
·························300A
•VCES ························600V
•RoHS compliant
•Insulated type
•2-Elements package
APPLICATION
EV/HEV and High Reliability Inverter
PACKAGE OUTLINES & CIRCUIT DIAGRAM
Dimensions in mm
PV
P
PG
U
PS
PE
NG
NA
NK
NS
NE
N
CIRCUIT DIAGRAM
2011/04
PEV-M0478-E
1
TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
Symbol
Item
Conditions
Tj = 25°C
Ratings
Unit
650
VCES
Collector-Emitter Voltage
VCC(surge)
Surge voltage when operating
Between P-N (short-circuit surge included)
500
V
VGES
Gate-emitter voltage
C-E short-circuited
20
V
―
Sense emitter - emitter voltage
C-E short-circuited, G-E short-circuited, non-repetition
2
V
C-E short-circuited, G-E short-circuited
20
V
―
G-E short-circuited
-30°C ≤ Tj ≤ 150 °C
Temperature sense diode emitter voltage
V
600
IC
Collector current
TC = 25°C
300
A
IE
Emitter current
TC = 25°C
300
A
PC
Maximum collector dissipation
TC = 25°C
735
W
Tj
Junction temperature
Tstg
Storage temperature
―
Viso
Isolation voltage
Main terminals to base plate, AC 1 minute
―
-30 ~ +125
t = 0.2s, non-repetition, accumulated time=3600s
+125 ~ +175
°C
-40 ~ +125
°C
2000
Vrms
Ratings
Unit
2.5 ~ 3.5
Nm
MECHANICAL RATINGS
Symbol
Item
Conditions
―
Tightening torque strength
Main terminal screw M5
―
Tightening surface pressure(Max.)
Mounting screw M5
40
MPa
―
Weight
Typical value
100
g
ELECTRICAL STATIC CHARACTERISICS (Tj = 25°C, unless otherwise noted)
Symbol
Item
Conditions
Limits
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
VCE = VCES, VGE = 0V
―
―
1
mA
VGE(th)
Gate-emitter threshold voltage
IC = 30mA,VCE = 10V
5.0
6.0
7.0
V
IGES
Gate leakage current
VGE = 20V
―
―
15
μA
VCE(sat)
Collector-emitter saturation voltage
―
1.6
2.0
V
―
1.7
2.2
V
VEC
Emitter-collector voltage
IE = 300A, VGE = 0V
―
―
1.8
V
On-chip temperature-sense
IF = 200μA
2.50
2.60
2.70
V
IF = 200μA, Tj = 125°C
1.83
1.93
2.03
V
―
30
―
nF
―
3
―
nF
―
1.3
―
nF
―
1.2
1.6
μC
VF
diode voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Total gate charge
2011/04
Tj = 25°C
IC = 300A, VGE = 15.0V
Tj = 125°C
VCE = 10V
VGE = 0V
VCC = 300V, IC = 300A, VGE = 15V
PEV-M0478-E
2
TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
ELECTRICAL DYNAMIC CHARACTERISICS (Tj = 25°C, unless otherwise noted)
Symbol
Item
td(on)
Turn-on delay time
tr
Turn-on rise time
td(off)
Turn-off delay time
tf
Turn-off fall time
trr
Reverse-recovery time
Qrr
Reverse-recovery charge
Conditions
Limits
Min.
Typ.
Max.
Unit
―
0.35
0.50
μs
VCC = 300V, IC = 300A, VGE = 15V
―
0.14
0.25
μs
RG(on) = 10Ω, RG(off) = 3.3Ω
―
0.68
1.06
μs
―
0.09
0.30
μs
―
0.10
0.18
μs
―
8.8
―
μC
Inductive load switching operation.
Note) Based on switching-time and diode
reverse-recovery waveforms measurements.
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)R
2011/04
Item
Conditions
Junction-case thermal resistance
Limits
Unit
Min.
Typ.
Max.
IGBT part (1/2 module)
―
―
0.22
°C/W
FWD part (1/2 module)
―
―
0.22
°C/W
PEV-M0478-E
3
TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
CHARACTERISTICS
(Representative Example)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(Representative Example)
3
EMITTER CURRENT IE(A)
COLLECTOR-EMITTER
SATURATION
VOLTAGE VCE(SAT) (V)
3
Tj=125°C
2
Tj=25°C
1
2
1
Tj=25°C
Tj=125°C
0
0
100
200
300
400
500
0
200
300
400
500
EMITTER-COLLECTOR VOLTAGE VEC(V)
CPACITANCE-vs-VCE CHARACTERISTICS
(Representative Example)
SWITCHING CHARACTERISTICS
(Representative Example)
100
1000
t d(of f )
SWITCHING TIME (ns)
Cies
10
Coes
1
Cres
0.1
t d(on)
100
tf
Conditions:
V CC=300V,V GE=15V
RG(ON)=10Ω
RG(OFF)=3.3Ω
Tj =125°C,Inductive load
tr
10
0.1
1
10
100
10
100
1000
COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR CURRENT IC(A)
FREE-WHEEL DIODE REVERSE
RECOVERY CHARACTERISTICS
(Representative Example)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Representative Example)
1000
1
Trr
100
Irr
Conditions:
V CC=300V
V GE=15V
RG(ON)=10Ω
Tj =25°C
Inductive load
10
10
100
1000
PEV-M0478-E
FWD
IGBT
IGBT part:
Per unit base=Rth(j-c)Q=0.22 °C/W
FWD part:
Per unit base=Rth(j-c)R=0.22 °C/W
0.1
0.01
EMITTER CURRENT IE(A)
2011/04
100
COLLECTOR CURRENT IC (A)
NORMARIZED TARANSIENT
THERMAL IMPEDANCE Zth(j-c)
REVERSE RECOVERY TIME Trr(ns)
REVERSE RECOVERY CURRENT Irr(A)
CAPACITANCE Cies, Coes, Cres (nF)
0
0.1
1
Time (s)
4
10
100
TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
GATE CHARGE CHARACTERISTICS
(Representative Example)
GATE-EMITTER VOLTAGE VGE (V)
20
IC =300A
VCC =300V
15
VCC =200V
10
5
0
0
500
1000
1500
2000
GATE CHARGE QG (nC)
Switching time measurement wave forms:
FWDi reverse-recovery characteristic
measurement wave form:
VGE
||
90%
IE
0
t
t rr
dI E /dt
IC
t
||
90%
0.5I rr
I rr
0
t d(off)
t d(on)
tr
2011/04
10%
t
tf
PEV-M0478-E
5
Qrr=1/2I rr*t rr
TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
Correct and Safety Use of Power Module
Unsuitable operation (such as electrical, mechanical stress and so on) may lead to damage of power modules.
Please pay attention to the following descriptions and use Mitsubishi Electric's IGBT modules according to the guidance.
During Transit:
• Keep shipping cartons right side up. If stress is applied by either placing a carton upside down or by leaning a box against
something, terminals can be bent and/or resin packages can be damaged.
• Tossing or dropping of a carton may damage devices inside.
• If a device gets wet with water, malfunctioning and failure may result. Special care should be taken during rain or snow to
prevent the devices from getting wet.
Storage:
• The temperature and humidity of the storage place should be 5~35°C and 45~75% respectively. The performance and
reliability of devices may be jeopardized if devices are stored in an environment far above or below the range indicated
above.
Prolonged Storage:
• When storing devices more than one year, dehumidifying measures should be provided for the storage place. When using
devices after a long period of storage, make sure to check the exterior of the devices is free from scratches, dirt, rust, and so
on.
Operating Environment:
• Devices should not be exposed to water, organic solvents, corrosive gases, explosive gases, fine particles, or corrosive
agents, since any of those can lead to a serious accident.
Flame Resistance:
• Although the epoxy resin is in conformity with UL 94-V0 standards, it should be noted that those are not non-flammable.
Anti-electrostatic Measures:
• Following precautions should be taken for MOS-gated devices to prevent static buildup which could damage the devices.
(1) Precautions against the device rupture caused by static electricity
Static electricity of human bodies and cartons and/or excessive voltage applied across the gate to emitter may damage and
rupture devices.
Sense-emitter and temperature-sensor are also vulnerable to excessive voltage. The basis of anti-
electrostatic build-up and quick dissipation of the charged electricity.
* Containers that are susceptible to static electricity should not be used for transit nor for storage.
* Signal terminals to emitter should be always shorted with a carbon cloth or the like until right before a module is used.
Never touch the signal terminals with bare hands.
* Always ground the equipment and your body during installation (after removing a carbon cloth or the like. It is advisable to
cover the workstation and it's surrounding floor with conductive mats and ground them.
* It should be noted that devices may get damaged by the static electricity charged to a printed circuit board if the signal
terminals to emitter of the circuit board is open.
* Use soldering irons with grounded tips.
(2) Precautions when the signal terminals to emitter is open
* Voltage should not be applied across the collector to emitter when the signal terminals to emitter is open.
* The signal terminals to emitter should be shorted before removing a device from a unit.
2011/04
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TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
Installation Method (image diagram)
M5 Screws
Press board
Terminals stand
(Isolated)
Heat-Sink
2011/04
PEV-M0478-E
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TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
Installation method
When installing a module to a heat sink, fastening with excessive uneven stress might cause the module to be damaged
or to be degraded because the internal silicon chips will be stressed.
Initial fastening: As a general rule, set the initial (or temporary) fastening torque to less than 20% of the maximum
rating.
Heat-Sink Flatness: In order to get most effective heat dissipation, it is necessary to enlarge the contact area between
the module and the heat-sink as much as possible to minimize the contact thermal resistance. Regarding the heat sink
flatness (warp/concavity and convexity) on the module installation surface, the surface finishing-treatment should be less
than 12s (please refer to the figure below).
*Note: The flatness of the heat sink should be designed to be within –50μm ~ +50μm
Thermal Grease: Evenly apply thermally-conductive grease (about 100μm~200μm thickness) over the contact surface
between the module and the heat sink. Applying grease is also useful for preventing the contact surface from corrosion.
Furthermore, ensure the grease to be with stable quality and long endurance within wide operating temperature range.
Fastening Torque: Use a torque wrench to fasten up to the specified torque rating. As mentioned above, exceeding
the maximum torque limitation might cause a module to be damaged or degraded. Also, pay attention not to have any
dirt remaining on the contact surface between the module and the heat sink.
Power Module
+
_
Heat-sink flatness range
Heat-Sink Flatness Measurement Range
2011/04
PEV-M0478-E
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TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
Main Revision for this Edition
No.
Date
Revision
Points
Pages
2011/04
PEV-M0478-E
9
TENTATIVE
< Transfer-molded Power-Module >
CT300DJH060
FOR HIGH-POWER SWITCHING
INSULATED PACKAGE
Keep safety first in your circuit designs!
• Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
2011/04
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