TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE CT300DJH060 FEATURE •IC ·························300A •VCES ························600V •RoHS compliant •Insulated type •2-Elements package APPLICATION EV/HEV and High Reliability Inverter PACKAGE OUTLINES & CIRCUIT DIAGRAM Dimensions in mm PV P PG U PS PE NG NA NK NS NE N CIRCUIT DIAGRAM 2011/04 PEV-M0478-E 1 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) Symbol Item Conditions Tj = 25°C Ratings Unit 650 VCES Collector-Emitter Voltage VCC(surge) Surge voltage when operating Between P-N (short-circuit surge included) 500 V VGES Gate-emitter voltage C-E short-circuited 20 V ― Sense emitter - emitter voltage C-E short-circuited, G-E short-circuited, non-repetition 2 V C-E short-circuited, G-E short-circuited 20 V ― G-E short-circuited -30°C ≤ Tj ≤ 150 °C Temperature sense diode emitter voltage V 600 IC Collector current TC = 25°C 300 A IE Emitter current TC = 25°C 300 A PC Maximum collector dissipation TC = 25°C 735 W Tj Junction temperature Tstg Storage temperature ― Viso Isolation voltage Main terminals to base plate, AC 1 minute ― -30 ~ +125 t = 0.2s, non-repetition, accumulated time=3600s +125 ~ +175 °C -40 ~ +125 °C 2000 Vrms Ratings Unit 2.5 ~ 3.5 Nm MECHANICAL RATINGS Symbol Item Conditions ― Tightening torque strength Main terminal screw M5 ― Tightening surface pressure(Max.) Mounting screw M5 40 MPa ― Weight Typical value 100 g ELECTRICAL STATIC CHARACTERISICS (Tj = 25°C, unless otherwise noted) Symbol Item Conditions Limits Min. Typ. Max. Unit ICES Collector cut-off current VCE = VCES, VGE = 0V ― ― 1 mA VGE(th) Gate-emitter threshold voltage IC = 30mA,VCE = 10V 5.0 6.0 7.0 V IGES Gate leakage current VGE = 20V ― ― 15 μA VCE(sat) Collector-emitter saturation voltage ― 1.6 2.0 V ― 1.7 2.2 V VEC Emitter-collector voltage IE = 300A, VGE = 0V ― ― 1.8 V On-chip temperature-sense IF = 200μA 2.50 2.60 2.70 V IF = 200μA, Tj = 125°C 1.83 1.93 2.03 V ― 30 ― nF ― 3 ― nF ― 1.3 ― nF ― 1.2 1.6 μC VF diode voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Total gate charge 2011/04 Tj = 25°C IC = 300A, VGE = 15.0V Tj = 125°C VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V PEV-M0478-E 2 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE ELECTRICAL DYNAMIC CHARACTERISICS (Tj = 25°C, unless otherwise noted) Symbol Item td(on) Turn-on delay time tr Turn-on rise time td(off) Turn-off delay time tf Turn-off fall time trr Reverse-recovery time Qrr Reverse-recovery charge Conditions Limits Min. Typ. Max. Unit ― 0.35 0.50 μs VCC = 300V, IC = 300A, VGE = 15V ― 0.14 0.25 μs RG(on) = 10Ω, RG(off) = 3.3Ω ― 0.68 1.06 μs ― 0.09 0.30 μs ― 0.10 0.18 μs ― 8.8 ― μC Inductive load switching operation. Note) Based on switching-time and diode reverse-recovery waveforms measurements. THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)R 2011/04 Item Conditions Junction-case thermal resistance Limits Unit Min. Typ. Max. IGBT part (1/2 module) ― ― 0.22 °C/W FWD part (1/2 module) ― ― 0.22 °C/W PEV-M0478-E 3 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION CHARACTERISTICS (Representative Example) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (Representative Example) 3 EMITTER CURRENT IE(A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(SAT) (V) 3 Tj=125°C 2 Tj=25°C 1 2 1 Tj=25°C Tj=125°C 0 0 100 200 300 400 500 0 200 300 400 500 EMITTER-COLLECTOR VOLTAGE VEC(V) CPACITANCE-vs-VCE CHARACTERISTICS (Representative Example) SWITCHING CHARACTERISTICS (Representative Example) 100 1000 t d(of f ) SWITCHING TIME (ns) Cies 10 Coes 1 Cres 0.1 t d(on) 100 tf Conditions: V CC=300V,V GE=15V RG(ON)=10Ω RG(OFF)=3.3Ω Tj =125°C,Inductive load tr 10 0.1 1 10 100 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE(V) COLLECTOR CURRENT IC(A) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (Representative Example) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Representative Example) 1000 1 Trr 100 Irr Conditions: V CC=300V V GE=15V RG(ON)=10Ω Tj =25°C Inductive load 10 10 100 1000 PEV-M0478-E FWD IGBT IGBT part: Per unit base=Rth(j-c)Q=0.22 °C/W FWD part: Per unit base=Rth(j-c)R=0.22 °C/W 0.1 0.01 EMITTER CURRENT IE(A) 2011/04 100 COLLECTOR CURRENT IC (A) NORMARIZED TARANSIENT THERMAL IMPEDANCE Zth(j-c) REVERSE RECOVERY TIME Trr(ns) REVERSE RECOVERY CURRENT Irr(A) CAPACITANCE Cies, Coes, Cres (nF) 0 0.1 1 Time (s) 4 10 100 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (Representative Example) GATE-EMITTER VOLTAGE VGE (V) 20 IC =300A VCC =300V 15 VCC =200V 10 5 0 0 500 1000 1500 2000 GATE CHARGE QG (nC) Switching time measurement wave forms: FWDi reverse-recovery characteristic measurement wave form: VGE || 90% IE 0 t t rr dI E /dt IC t || 90% 0.5I rr I rr 0 t d(off) t d(on) tr 2011/04 10% t tf PEV-M0478-E 5 Qrr=1/2I rr*t rr TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE Correct and Safety Use of Power Module Unsuitable operation (such as electrical, mechanical stress and so on) may lead to damage of power modules. Please pay attention to the following descriptions and use Mitsubishi Electric's IGBT modules according to the guidance. During Transit: • Keep shipping cartons right side up. If stress is applied by either placing a carton upside down or by leaning a box against something, terminals can be bent and/or resin packages can be damaged. • Tossing or dropping of a carton may damage devices inside. • If a device gets wet with water, malfunctioning and failure may result. Special care should be taken during rain or snow to prevent the devices from getting wet. Storage: • The temperature and humidity of the storage place should be 5~35°C and 45~75% respectively. The performance and reliability of devices may be jeopardized if devices are stored in an environment far above or below the range indicated above. Prolonged Storage: • When storing devices more than one year, dehumidifying measures should be provided for the storage place. When using devices after a long period of storage, make sure to check the exterior of the devices is free from scratches, dirt, rust, and so on. Operating Environment: • Devices should not be exposed to water, organic solvents, corrosive gases, explosive gases, fine particles, or corrosive agents, since any of those can lead to a serious accident. Flame Resistance: • Although the epoxy resin is in conformity with UL 94-V0 standards, it should be noted that those are not non-flammable. Anti-electrostatic Measures: • Following precautions should be taken for MOS-gated devices to prevent static buildup which could damage the devices. (1) Precautions against the device rupture caused by static electricity Static electricity of human bodies and cartons and/or excessive voltage applied across the gate to emitter may damage and rupture devices. Sense-emitter and temperature-sensor are also vulnerable to excessive voltage. The basis of anti- electrostatic build-up and quick dissipation of the charged electricity. * Containers that are susceptible to static electricity should not be used for transit nor for storage. * Signal terminals to emitter should be always shorted with a carbon cloth or the like until right before a module is used. Never touch the signal terminals with bare hands. * Always ground the equipment and your body during installation (after removing a carbon cloth or the like. It is advisable to cover the workstation and it's surrounding floor with conductive mats and ground them. * It should be noted that devices may get damaged by the static electricity charged to a printed circuit board if the signal terminals to emitter of the circuit board is open. * Use soldering irons with grounded tips. (2) Precautions when the signal terminals to emitter is open * Voltage should not be applied across the collector to emitter when the signal terminals to emitter is open. * The signal terminals to emitter should be shorted before removing a device from a unit. 2011/04 PEV-M0478-E 6 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE Installation Method (image diagram) M5 Screws Press board Terminals stand (Isolated) Heat-Sink 2011/04 PEV-M0478-E 7 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE Installation method When installing a module to a heat sink, fastening with excessive uneven stress might cause the module to be damaged or to be degraded because the internal silicon chips will be stressed. Initial fastening: As a general rule, set the initial (or temporary) fastening torque to less than 20% of the maximum rating. Heat-Sink Flatness: In order to get most effective heat dissipation, it is necessary to enlarge the contact area between the module and the heat-sink as much as possible to minimize the contact thermal resistance. Regarding the heat sink flatness (warp/concavity and convexity) on the module installation surface, the surface finishing-treatment should be less than 12s (please refer to the figure below). *Note: The flatness of the heat sink should be designed to be within –50μm ~ +50μm Thermal Grease: Evenly apply thermally-conductive grease (about 100μm~200μm thickness) over the contact surface between the module and the heat sink. Applying grease is also useful for preventing the contact surface from corrosion. Furthermore, ensure the grease to be with stable quality and long endurance within wide operating temperature range. Fastening Torque: Use a torque wrench to fasten up to the specified torque rating. As mentioned above, exceeding the maximum torque limitation might cause a module to be damaged or degraded. Also, pay attention not to have any dirt remaining on the contact surface between the module and the heat sink. Power Module + _ Heat-sink flatness range Heat-Sink Flatness Measurement Range 2011/04 PEV-M0478-E 8 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE Main Revision for this Edition No. Date Revision Points Pages 2011/04 PEV-M0478-E 9 TENTATIVE < Transfer-molded Power-Module > CT300DJH060 FOR HIGH-POWER SWITCHING INSULATED PACKAGE Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party • Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. • Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, unclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. 2011/04 PEV-M0478-E 10